Abstract: Double-pulse write for phase change memory including: writing a phase change material from a high RESET state to a weakened RESET state with a first step, writing the phase change material from the weakened RESET state to a SET state with a second step, the second step having a lower current than the first step, verifying a parameter of the phase change material wherein if the parameter is higher than a target for a SET state, then repeating the writing with the first step, the writing with the second step, and the verifying until the parameter is lower than the target wherein a current for the first step is decreased by a decrement with each iteration without becoming lower than a current for the second step.