Abstract: A system for non-invasively measuring an analyte in a vehicle driver and controlling a vehicle based on a measurement of the analyte. At least one solid-state light source is configured to emit different wavelengths of light. A sample device is configured to introduce the light emitted by the at least one solid-state light source into tissue of the vehicle driver. One or more optical detectors are configured to detect a portion of the light that is not absorbed by the tissue of the vehicle driver. A controller is configured to calculate a measurement of the analyte in the tissue of the vehicle driver based on the light detected by the one or more optical detectors, determine whether the measurement of the analyte in the tissue of the vehicle driver exceeds a pre-determined value, and provide a signal to a device configured to control the vehicle.

Abstract: The present invention provides a widely tunable, single mode emission semiconductor laser which comprises a semiconductor substrate, a first linear ridge waveguide which forms a first coupled cavity, and a second linear ridge waveguide which forms a second coupled cavity, with the first coupled cavity being separated from the second coupled cavity by a gap. The first and second coupled cavities comprise p-contacts and n-contacts for allowing laser currents I1, I2 to be injected into the first and second coupled cavities, respectively. The first and second coupled cavities comprise first and second heating resistors, respectively, for heating the first and second coupled cavities when heating currents H1, H2 are applied to the first and second heating resistors, respectively. A heating resistor is provided for heating the semiconductor substrate of the semiconductor laser so as to regulate the base temperature T of the chip (i.e., the semiconductor substrate).

Abstract: A system for non-invasively measuring an analyte in a vehicle driver and controlling a vehicle based on a measurement of the analyte. At least one solid-state light source is configured to emit different wavelengths of light. A sample device is configured to introduce the light emitted by the at least one solid-state light source into tissue of the vehicle driver. One or more optical detectors are configured to detect a portion of the light that is not absorbed by the tissue of the vehicle driver. A controller is configured to calculate a measurement of the analyte in the tissue of the vehicle driver based on the light detected by the one or more optical detectors, determine whether the measurement of the analyte in the tissue of the vehicle driver exceeds a pre-determined value, and provide a signal to a device configured to control the vehicle.

Abstract: A system for non-invasively measuring an analyte in a vehicle driver and controlling a vehicle based on a measurement of the analyte. At least one solid-state light source is configured to emit different wavelengths of light. A sample device is configured to introduce the light emitted by the at least one solid-state light source into tissue of the vehicle driver. One or more optical detectors are configured to detect a portion of the light that is not absorbed by the tissue of the vehicle driver. A controller is configured to calculate a measurement of the analyte in the tissue of the vehicle driver based on the light detected by the one or more optical detectors, determine whether the measurement of the analyte in the tissue of the vehicle driver exceeds a pre-determined value, and provide a signal to a device configured to control the vehicle.

Abstract: The present invention provides a widely tunable, single mode emission semiconductor laser which comprises a semiconductor substrate, a first linear ridge waveguide which forms a first coupled cavity, and a second linear ridge waveguide which forms a second coupled cavity, with the first coupled cavity being separated from the second coupled cavity by a gap. The first and second coupled cavities comprise p-contacts and n-contacts for allowing laser currents I1, I2 to be injected into the first and second coupled cavities, respectively. The first and second coupled cavities comprise first and second heating resistors, respectively, for heating the first and second coupled cavities when heating currents H1, H2 are applied to the first and second heating resistors, respectively. A heating resistor is provided for heating the semiconductor substrate of the semiconductor laser so as to regulate the base temperature T of the chip (i.e., the semiconductor substrate).

Abstract: A system for non-invasively measuring an analyte in a vehicle driver and controlling a vehicle based on a measurement of the analyte. At least one solid-state light source is configured to emit different wavelengths of light. A sample device is configured to introduce the light emitted by the at least one solid-state light source into tissue of the vehicle driver. One or more optical detectors are configured to detect a portion of the light that is not absorbed by the tissue of the vehicle driver. A controller is configured to calculate a measurement of the analyte in the tissue of the vehicle driver based on the light detected by the one or more optical detectors, determine whether the measurement of the analyte in the tissue of the vehicle driver exceeds a pre-determined value, and provide a signal to a device configured to control the vehicle.

Abstract: Embodiments relate to a semiconductor laser having a multilayer structure including a ridge and two material removal areas adjacent to the ridge on either side, the multilayer structure being arranged on a substrate and a layer expansion plane being defined by a surface of the substrate, the ridge having at least one active region and at least the active region being spatially limited by passages between the ridge and the material removal areas in one dimension of the layer expansion plane, the active region having a layer structure for forming an interband cascade laser.

Abstract: Embodiments relate to a semiconductor laser having a multilayer structure including a ridge and two material removal areas adjacent to the ridge on either side, the multilayer structure being arranged on a substrate and a layer expansion plane being defined by a surface of the substrate, the ridge having at least one active region and at least the active region being spatially limited by passages between the ridge and the material removal areas in one dimension of the layer expansion plane, the active region having a layer structure for forming an interband cascade laser.

Abstract: The invention relates to a semiconductor laser diode (01) having a substrate layer, a first doped cladding layer (02) and a second doped cladding layer (09), at least one wave guide (03, 04), an active layer, a cladding layer structure (05) that is adjacent to the active layer or to the at least one wave guide (03, 04), and at least one interdigital transducer (08), wherein the at least one interdigital transducer (08) is adjacent to the cladding layer structure (05) and the cladding layer structure (05) has at least a first area (06) that is realized as a substantially undoped semiconductor layer and has, at least in sections, a second area (07) that is adjacent to the first area (06) at one side and to the interdigital transducer (08) at another side, the second area (07) having a reduced density of free charge carriers as compared to the first area (06).