Abstract: An apparatus detects a vehicle/pedestrian impact event by sensing impact events near a forward location of a vehicle using a multi-port pressure sensor and acceleration sensors. The multi-port pressure sensor includes multiple pressure sensors in a unified housing, connected via individual pressure ports to multiple impact-sensing hoses mounted along the vehicle bumper. An acceleration sensor may also be installed in the same housing. A single electrical connector provides connection to the multiple pressure sensors and also the acceleration sensors.

Abstract: An apparatus detects a vehicle/pedestrian impact event by sensing impact events near a forward location of a vehicle using a multi-port pressure sensor and acceleration sensors. The multi-port pressure sensor includes multiple pressure sensors in a unified housing, connected via individual pressure ports to multiple impact-sensing hoses mounted along the vehicle bumper. An acceleration sensor may also be installed in the same housing. A single electrical connector provides connection to the multiple pressure sensors and also the acceleration sensors.

Abstract: The invention relates to a catalyst body with one or several layer elements with etched cavities, through which flowing media may flow, such as for example, pores or channels. The cavities are essentially arranged perpendicular to the layer elements and the production is by means of etching methods from semiconductor technology.

Abstract: The invention relates to a body part of a vehicle provided with a support and with a transparent covering layer. A thin-film solar cell is applied to said support. The support, together with the thin-film solar cell, is covered by the transparent covering layer. The transparent covering layer consists of a paint layer, particularly a clear varnish layer. The thin-film solar cell is a CIS-, CIGS-, CIGSS-, CdTe- or an Si-based (particularly Si/SiGe) thin-film solar cell.

Abstract: A silicon-germanium thin-film solar cell having a quantum well structure as an active base layer within the space-charge region of the silicon p-n diode junction. The quantum well structure is composed of a sequence of silicon and germanium layers. In this manner, a highly absorbent base layer is produced in a silicon solar cell.

Abstract: A silicon-germanium thin-film solar cell having a quantum well structure as an active base layer within the space-charge region of the silicon p-n diode junction. The quantum well structure is composed of a sequence of silicon and germanium layers. In this manner, a highly absorbent base layer is produced in a silicon solar cell.