Abstract: The gate region of a field effect transistor comprises at least one through hole wherein a nanoelement is provided which is electrically coupled to the source and the drain. The nanoelement may have the conductance thereof controlled by means of the gate, such that the nanoelement forms a channel region of the field effect transistor.

Abstract: A process which allows effective application or removal of materials to and from substrates using a scanning probe microscope operated at atmospheric pressure. The substrate is placed in a trough, located on the x-y table of a scanning probe microscope (SXM), and this trough is filled with a liquid and/or gaseous medium up to a level such that the top side of the substrate is covered with a thin layer, composed of at least one monolayer of the medium. For depositing a structured precipitate from the medium or for structuring etching of the surface of the substrate, the microtip of the SXM is then dipped into the layer and supplied with an electric voltage or with voltage pulses. The process can be used for applying or removing materials to and from substrates. The process is also usable for characterization of the geometry and for restoration or the production of microtips of SXM cantilevers, as well as for storing information, for reading information and for erasing information.