Abstract: A TiW layer (14 and 14') between a nickel plug (16 and 16') and a silicon substrate (1) of a semiconductor device precludes the formation of nickel silicides. The nickel plugs are formed by means of an electroless nickel bath to which stabilizers are added which ensure that the contact holes (13 and 13') are filled with nickel right up to the edge.

Abstract: The invention provides a method by which a transparent defect (3) in a lithographic mask (1) can be effectively restored in a simple manner. For this purpose, the mask (1) is provided with a photosensitive layer (4) and is introduced into a solution of a metal ion (5). Subsequently, the mask is exposed at the area of the defect. The photosensitive layer (4) is capable of depositing the metal ion in the form of metal under the influence of the radiation (6) supplied. According to the invention, the exposure is continued until such a quantity of metal (7) has been deposited that the radiation can no longer penetrate to the photosensitive layer (4). At that instant, the metal deposition is stopped so that overgrowth of the metal deposit (7) is automatically counteracted in a simple manner.

Abstract: From a solution comprising a salt of a noble metal, for example Pd, and ammonia or amine a metal track is deposited on a substrate surface which may be an insulator, semiconductor or conductor, by means of a laser beam.

Abstract: A method of locally providing metal on a surface of a substrate, in which the substrate is provided at the surface with an electrocatalythic image. The surface is then brought into contact with an electroless metal-plating solution. The electrocatalythic image is capable of binding metal to it from the metal-plating solution. Due to the fact that the image is brought into contact with the metal-plating solutin, the image is gradually strengthened with metal from the solution. With images smaller than 10 .mu.m, this strengthening is prevented, however, due to the fact that oxygen is present in the solution. Because oxygen is reduced, a reduction of metal ions in the solution cannot occur, as a result of which no metal deposition takes place on the image. According to the invention, the reduction of oxygen in the solution is counteracted at least relatively so that also in the case of images smaller than 10 .mu.m metal ions are reduced without hindrance to the metal, which is then deposited on the image.