Abstract: A method of manufacturing an optoelectronic semiconductor device includes the step of providing two comparatively thin layers next to one another on a substrate by means of a non-selective growing process, an etching process, and a selective growing process, a cladding layer being present over said thin layers. In the known method, first the one thin layer and the cladding layer are grown, the latter is locally removed, and the other thin layer and the cladding layer are then grown in that position. This method has the disadvantage that unevennesses (steps or openings) often arise at the surface of the layer structure above the transition between the thin layers.