Abstract: A motorized chain saw has a measuring system for measuring an object, in particular a trunk. The motorized chain saw has a saw chain, and the measuring system has an evaluation device. The measuring system includes a sensor system for capturing the movement of the saw chain as the saw chain rolls over an object to be measured. The evaluation device is configured to evaluate the movement of the saw chain captured by the sensor system. In a method for operating the motorized chain saw, the sensor system captures the movement of the saw chain as the saw chain rolls over an object to be measured, and the evaluation device evaluates the captured movement.

Abstract: A motorized chain saw has a measuring system for measuring an object, in particular a trunk. The motorized chain saw has a saw chain, and the measuring system has an evaluation device. The measuring system includes a sensor system for capturing the movement of the saw chain as the saw chain rolls over an object to be measured. The evaluation device is configured to evaluate the movement of the saw chain captured by the sensor system. In a method for operating the motorized chain saw, the sensor system captures the movement of the saw chain as the saw chain rolls over an object to be measured, and the evaluation device evaluates the captured movement.

Abstract: This application relates to systems and methods for multi-junction solar cells that includes at least one recrystallized silicon layer. The recrystallized silicon lay may have a microcrystalline structure following a heat treatment or laser treatment of an amorphous silicon layer. The multi-junction solar cell may be a p-i-n or n-i-p structure that may include a p-type doped silicon layer, an intrinsic silicon layer, and an n-doped silicon layer. In one embodiment, the intrinsic layer in either type of structure may be the recrystallized silicon layer.

Abstract: Solar devices with high resistance to light-induced degradation are described. A wide optical bandgap interface layer positioned between a p-doped semiconductor layer and an intrinsic semiconductor layer is made resistant to light-induced degradation through treatment with a hydrogen-containing plasma. In one embodiment, a p-i-n structure is formed with the interface layer at the p/i interface. Optionally, an additional interface layer treated with a hydrogen-containing plasma is formed between the intrinsic layer and the n-doped layer. Alternatively, a hydrogen-containing plasma is used to treat an upper portion of the intrinsic layer prior to deposition of the n-doped semiconductor layer. The interface layer is also applicable to-multi-junction solar cells with plural p-i-n structures. The p-doped and n-doped layers can optionally include sublayers of different compositions and different morphologies (e.g., microcrystalline or amorphous).

Abstract: The present invention provides an improved thin film solar cell, wherein at least one additional resistive transparent conductive oxide (TCO) layer is incorporated into the solar cell. The additional resistive TCO electrically separates the conductive TCO layers acting as electrodes of such a cell and thus decreases or prevents performance losses. Furthermore, methods for the production of such solar cells are disclosed.

Abstract: There is provided a method of coating a substrate with a zinc oxide film. The method includes (a) providing a substrate with at least one substantially flat surface, (b) subjecting the surface at least partially to a plasma-etching process, and (c) depositing on the etched surface, a layer that includes zinc oxide. The method is particularly suitable for manufacturing solar cells.

Abstract: A method for manufacturing a micromorph tandem cell is disclosed. The micromorph tandem cell comprises a ?c-Si:H bottom cell and an a-Si:H top cell, an LPCVD ZnO front contact layer and a ZnO back contact in combination with a white reflector. The method comprises the steps of applying an AR—Anti-Reflecting—concept to the micromorph tandem cell; implementing an intermediate reflector in the micromorph tandem cell. The micromorph tandem cell can achieve a stabilized efficiency of 10.6%.

Abstract: In the frame of manufacturing a photovoltaic cell a layer (3) of silicon compound is deposited on a structure (1). The yet uncovered surface (3a) is treated in a predetermined oxygen (O2) containing atmosphere which additionally contains a dopant (D). Thereby, the silicon compound layer is oxidized and doped in a thin surface area (5).

Abstract: The present invention relates to a device for the treatment of a workpiece, in particular of a substantially flat substrate, comprising a table (2) for supporting the workpiece (5), a flow generation apparatus (6, 11) producing a gas flow (22) on a top face (17.1, 17.2) of the table (2) in a region between the workpiece (5) and the top face (17.1, 17.2) of the table (2), on which gas flow the workpiece (5) is supported during the treatment.

Abstract: A photovoltaic device is provided that includes a substrate, a first transparent conductive layer positioned on the substrate, a plurality of transparent conductive rods positioned on the first transparent conductive layer and having a growth direction, the growth direction extending in a direction away from the substrate, a photovoltaically active layer covering the plurality of transparent conductive rods rods and a conductive layer positioned on the photovoltaically active layer.

Abstract: A thin film photovoltaic device on a substrate is being realized by a method for manufacturing a p-i-n junction semiconductor layer stack with a p-type microcrystalline silicon layer, a p-type amorphous silicon layer, a buffer silicon layer comprising preferably intrinsic amorphous silicon, an intrinsic type amorphous silicon layer, and an n-type silicon layer over the intrinsic type amorphous silicon layer.

Abstract: Solar cells or solar modules of the so-called tandem type, i.e. stacked arrangements of photovoltaic absorber devices on a substrate with a textured surface are described. The thin film solar cell has a substrate comprising a textured surface, and a front electrode layer comprising a transparent conductive oxide adjacent to the textured surface, wherein the electrode layer has a thickness less than the roughness of the textured surface.

Abstract: The present invention provides a method of coating a substrate with a zinc oxide film, the method comprising the steps of: Providing a substrate with at least one substantially flat surface; Subjecting said surface at least partially to a plasma-etching process; Depositing a layer on said etched surface, the layer comprising zinc oxide. The method according to the invention is particularly suitable for manufacturing solar cells with an improved efficiency.

Abstract: A photovoltaic cell (10) is fabricated by depositing a first transparent conductive layer (12) onto a substrate carrier (11). Portions of the first transparent conductive layer (12) are selectively removed to form a plurality of discrete transparent conductive protruding regions (13) or a plurality of discrete indentations (27) in the first transparent conductive layer (12). A silicon layer (14) comprising a charge separating junction is deposited onto the plurality of discrete protruding regions (13) or onto the plurality of discrete indentations (27) by chemical vapour deposition. A second transparent conductive layer (15) is deposited on the silicon layer (14) by chemical vapour deposition.

Abstract: A method for manufacturing a micromorph tandem cell is disclosed. The micromorph tandem cell comprises a ?c-Si:H bottom cell and an a-Si:H top cell, an LPCVD ZnO front contact layer and a ZnO back contact in combination with a white reflector. The method comprises the steps of applying an AR—Anti-Reflecting—concept to the micromorph tandem cell; implementing an intermediate reflector in the micromorph tandem cell. The micromorph tandem cell can achieve a stabilized efficiency of 10.6%.

Abstract: A photovoltaic device is provided that includes a substrate, a first transparent conductive layer positioned on the substrate, a plurality of transparent conductive rods positioned on the first transparent conductive layer and having a growth direction, the growth direction extending in a direction away from the substrate, a photovoltaically active layer covering the plurality of transparent conductive rods rods and a conductive layer positioned on the photovoltaically active layer.

Abstract: A photovoltaic cell (10) is provided which includes a substrate carrier (11), a first transparent conductive layer (12) positioned on the substrate carrier (11) comprising a plurality of discrete transparent conductive protruding regions (13) or a plurality of discrete indentations. A silicon layer (14) comprising a charge separating junction covers the first transparent conductive layer (12) and the plurality of discrete transparent conductive protruding regions (13) or the plurality of discrete indentations and a second transparent conductive layer (15) is positioned on the silicon layer (14).

Abstract: Micromorph tandem cells with stabilized efficiencies of 11.0% have been achieved on as-grown LPCVD ZnO front TCO at bottom cell thickness of just 1.3 ?m in combination with an antireflection concept. Applying an advanced LPCVD ZnO front TCO stabilized tandem cells of 10.6% have been realized at a bottom cell thickness of only 0.8 ?m. Implementing intermediate reflectors in Micromorph tandem cell devices allow for, compared to commercial SnO2, reduced optical losses when LPCVD ZnO is used. At present highest stabilized cell efficiency reached 11.3% incorporating an in-situ intermediate reflector with a bottom cell thickness of 1.6 ?m.

Abstract: A thin film photovoltaic device on a substrate is being realized by a method for manufacturing a p-i-n junction semiconductor layer stack with a p-type microcrystalline silicon layer, a p-type amorphous silicon layer, a buffer silicon layer comprising preferably intrinsic amorphous silicon, an intrinsic type amorphous silicon layer, and an n-type silicon layer over the intrinsic type amorphous silicon layer.

Abstract: The method for manufacturing a photovoltaic cell or a photovoltaic converter panel comprises depositing a layer of p-doped amorphous silicon using a gas mixture comprising silane, methane, hydrogen and trimethylboron in a ratio of 1:2:2:1.25. In particular, plasma-enhanced chemical vapor deposition is used for the deposition. The corresponding photovoltaic cells and photovoltaic converter panels are also described.