Abstract: The present invention relates to an inkjet print head (1) comprising at least one nozzle chamber (2), having a nozzle aperture (3) defined in one wall thereof for the ejection of printing fluid out of said aperture (3), and a printing fluid supply channel interconnected with said nozzle chamber (2). A printing fluid droplet tail release guide arrangement (4) is arranged at a predetermined position at an edge of a circumference of said aperture (3). The present invention further relates to a method for increasing droplet placement accuracy in an inkjet print head having at least one nozzle chamber with a nozzle aperture defined in one wall thereof for the ejection of printing fluid out of said aperture. The method comprises the step of providing a printing fluid droplet tail release guide arrangement at a predetermined position at an edge of a circumference of said aperture.

Abstract: An electric device includes at least one organic diode and a driver for driving the diode in at least a light sensing state. A pre-pulse generator is provided for applying one or more electrical pulses to the diode prior to drive the diode in the light sensing state. The pulses include a positive electric pre-pulse and a negative pre-pulse.

Abstract: The invention relates to a display device comprising a plurality of light-emitting diodes (LEDs), which comprise at least one layer of an electroluminescent (EL) material sandwiched between electrodes, and driving means for driving the diodes. The device further comprises means for applying a reverse voltage to one or more individual diodes or groups of diodes and means for measuring the leakage current resulting from this reverse voltage. The invention also relates to a method of manufacturing such a display device and to an electronic device, such as a mobile telephone or an organiser, comprising such a display device.

Abstract: The electronic device (1) has a layer (11) of a material comprising a first and a second element. This material has an amorphous and a crystalline state. A transition from the amorphous to the crystalline state can be effected by heating of the material to above a crystallization temperature, for example with a laser. As a result, the layer (11) has a first electrically conducting areas (21), comprising the material in the crystalline state, which are insulated from each other by the first electrically insulating area (23), comprising the material in the amorphous state. The layer (11) may be present as an interconnect layer, but also as a covering layer. Preferably, the material is aluminum-germanium. In the method of patterning a layer (11), electrically conductive areas of the layer can be strengthened by electroplating.

Abstract: The electronic device (1) has a layer (11) of a material comprising a first and a second element. This material has an amorphous and a crystalline state. A transition from the amorphous to the crystalline state can be effected by heating of the material to above a crystallization temperature, for example with a laser. As a result, the layer (11) has a first electrically conducting areas (21), comprising the material in the crystalline state, which are insulated from each other by the first electrically insulating area (23), comprising the material in the amorphous state. The layer (11) may be present as an interconnect layer, but also as a covering layer. Preferably, the material is aluminum-germanium. In the method of patterning a layer (11), electrically conductive areas of the layer can be strengthened by electroplating.

Abstract: The electronic device (1) has a layer (11) of a material comprising a first and a second element. This material has an amorphous and a crystalline state. A transition from the amorphous to the crystalline state can be effected by heating of the material to above a crystallization temperature, for example with a laser. As a result, the layer (11) has a first electrically conducting areas (21), comprising the material in the crystalline state, which are insulated from each other by the first electrically insulating area (23), comprising the material in the amorphous state. The layer (11) may be present as an interconnect layer, but also as a covering layer. Preferably, the material is aluminum-germanium. In the method of patterning a layer (11), electrically conductive areas of the layer can be strengthened by electroplating.

Abstract: The electronic device (1) has a layer (11) of a material comprising a first and a second element. This material has an amorphous and a crystalline state. A transition from the amorphous to the crystalline state can be effected by heating of the material to above a crystallization temperature, for example with a laser. As a result, the layer (11) has a first electrically conducting areas (21), comprising the material in the crystalline state, which are insulated from each other by the first electrically insulating area (23), comprising the material in the amorphous state. The layer (11) may be present as an interconnect layer, but also as a covering layer. Preferably, the material is aluminum-germanium. In the method of patterning a layer (11), electrically conductive areas of the layer can be strengthened by electroplating.