Patents by Inventor Johannes P. M. Damen

Johannes P. M. Damen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6172460
    Abstract: Display device, in particular a PALC device, having a plasma space provided with a capsule (46) comprising getter material for supplying guest material to the plasma, e.g. H2, HD, D2. The capsule remains closed until the critical high temperature processing has been finished.
    Type: Grant
    Filed: June 4, 1999
    Date of Patent: January 9, 2001
    Assignee: U.S. Philips Corporation
    Inventors: Johannes P. M. Damen, Ronald Van Rijswijk, Cornelus H. M. Van Bommel
  • Patent number: 4665612
    Abstract: A magnetic head (32) having a magnet core (30) of ferrite and a layer of a bonding material (28) consisting of glass in the gap-forming area of the magnet core (38). In order to ensure that on the one hand the ferrite be not attacked by the glass during the bonding process and that on the other hand the temperature adjustment during the bonding process is not too critical, double layer diffusion barriers are provided between the layer of bonding material (28) and the core parts (10) and (10'), respectively, which barriers are formed by a layer of silicon nitride (26) on the side of the bonding layer (28) and a layer of silicon oxide (24) on the side of the core parts (10) and (10'), respectively.
    Type: Grant
    Filed: April 7, 1986
    Date of Patent: May 19, 1987
    Assignee: U.S. Philips Corporation
    Inventors: Johannes P. M. Damen, Klaas Prijs, Cornelis H. M. Witmer, Gijsbertus de With
  • Patent number: 4600957
    Abstract: A magnetic head (32) includes a magnet core (30) of ferrite and a layer of a bonding material (28) consisting of glass in the gap-forming area of the magnet core (38). In order to ensure that the ferrite is not attacked by the glass during the bonding process and that the temperature adjustment during the bonding process is not too critical, double layer diffusion barriers are provided between the layer of bonding material (28) and the core parts (10), (10'), respectively. Each barrier is formed by a layer of silicon nitride (26) on the side of the bonding layer (28) and a layer of silicon oxide (24) on the side of the core.
    Type: Grant
    Filed: May 2, 1983
    Date of Patent: July 15, 1986
    Assignee: U. S. Philips Corporation
    Inventors: Johannes P. M. Damen, Klaas Prijs, Cornelis H. M. Witmer, Gijsbertus de With
  • Patent number: 4568993
    Abstract: Magnetic head for a magnetic recording and playback apparatus includes a core of a Mn--Zn-ferrous ferrite having a very high saturation magnetization. The Mn--Zn-ferrous ferrite has a composition (not counting optional substitutions) according to the formulaMn.sub.a Zn.sub.b Fe.sub.c.sup.II Fe.sub.e.sup.III O.sub.4with0<a.ltoreq.0.550.06.ltoreq.b.ltoreq.0.40.25.ltoreq.c.ltoreq.0.9(a+b+c=1).The result is that the magnetic head may be used in combination with magnetic tapes having a very high coercive force (up to 104 kA/m (1300 Oersted) and may be used for transducing signals having a frequency of a few MHz.
    Type: Grant
    Filed: January 24, 1983
    Date of Patent: February 4, 1986
    Assignee: U.S. Philips Corporation
    Inventors: Doeko Stoppels, Piet F. Bongers, Johannes P. M. Damen, Eelco G. Visser
  • Patent number: 4379021
    Abstract: A method of manufacturing a single crystal of a composite oxide by gradual solidification of a melt with solidification starting from a seed crystal which initially is in contact with the melt, is provided wherein to obtain a single crystal having a composition which is as homogeneous as possible (homogeneous within 1 mol. %) the following measures are taken: first, initially the melt consists of no more than 25% by weight of the single crystal to be grown; and second, during the solidification process molten material is added to the melt at the same rate and having the same composition as material solidifies out from the melt.
    Type: Grant
    Filed: September 15, 1981
    Date of Patent: April 5, 1983
    Assignee: U.S. Philips Corporation
    Inventors: Johannes P. M. Damen, Theodorus J. Berben
  • Patent number: 4323618
    Abstract: A novel non-magnetic monocrystalline garnet substrate material in the form of calcium--gallium-germanium garnet. Single crystals of calcium-gallium-germanium garnet can be grown at mush lower temperatures by means of the Czocharalski method than single crystals of the conventional rare earth-gallium garnets. These single crystals are very suitable to epitaxially grow bubble domain films thereon, in particular films on the basis of Lu.sub.3 Fe.sub.5 O.sub.12.
    Type: Grant
    Filed: February 13, 1978
    Date of Patent: April 6, 1982
    Assignee: U.S. Philips Corporation
    Inventors: Johannes P. M. Damen, Johannes A. Pistorius