Patents by Inventor Johannes Pollanen

Johannes Pollanen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Qubit hardware for electrons on helium
    Patent number: 11201277
    Abstract: Disclosed is a system and a method to use the system that includes a substrate to support a film of liquid helium and an electron subsystem confined by image forces in a direction perpendicular to the surface of the film, a side gate to electrostatically define a boundary of the electron subsystem, a trap gate to electrostatically define an electron trap located outside the boundary of the electron subsystem, and a load gate to selectively open and close access from the electron subsystem to the electron trap, wherein to open access to the electron trap is to apply a first load gate voltage to the load gate to allow the electrons to access the electron trap, and wherein to close access to the electron trap is to apply a second load gate voltage to the load gate to prevent the electrons from accessing the electron trap.
    Type: Grant
    Filed: January 6, 2021
    Date of Patent: December 14, 2021
    Inventors: Johannes Pollanen, Niyaz Beysengulov, David Rees
  • QUBIT HARDWARE FOR ELECTRONS ON HELIUM
    Publication number: 20210202821
    Abstract: Disclosed is a system and a method to use the system that includes a substrate to support a film of liquid helium and an electron subsystem confined by image forces in a direction perpendicular to the surface of the film, a side gate to electrostatically define a boundary of the electron subsystem, a trap gate to electrostatically define an electron trap located outside the boundary of the electron subsystem, and a load gate to selectively open and close access from the electron subsystem to the electron trap, wherein to open access to the electron trap is to apply a first load gate voltage to the load gate to allow the electrons to access the electron trap, and wherein to close access to the electron trap is to apply a second load gate voltage to the load gate to prevent the electrons from accessing the electron trap.
    Type: Application
    Filed: January 6, 2021
    Publication date: July 1, 2021
    Inventors: Johannes Pollanen, Niyaz Beysengulov, David Rees
  • Qubit hardware for electrons on helium
    Patent number: 10892398
    Abstract: Disclosed is a system and a method to use the system that includes a substrate to support a film of liquid helium and an electron subsystem confined by image forces in a direction perpendicular to the surface of the film, a side gate to electrostatically define a boundary of the electron subsystem, a trap gate to electrostatically define an electron trap located outside the boundary of the electron subsystem, and a load gate to selectively open and close access from the electron subsystem to the electron trap, wherein to open access to the electron trap is to apply a first load gate voltage to the load gate to allow the electrons to access the electron trap, and wherein to close access to the electron trap is to apply a second load gate voltage to the load gate to prevent the electrons from accessing the electron trap.
    Type: Grant
    Filed: March 13, 2020
    Date of Patent: January 12, 2021
    Inventors: Johannes Pollanen, Niyaz Beysengulov, David Rees
  • QUBIT HARDWARE FOR ELECTRONS ON HELIUM
    Publication number: 20200313063
    Abstract: Disclosed is a system and a method to use the system that includes a substrate to support a film of liquid helium and an electron subsystem confined by image forces in a direction perpendicular to the surface of the film, a side gate to electrostatically define a boundary of the electron subsystem, a trap gate to electrostatically define an electron trap located outside the boundary of the electron subsystem, and a load gate to selectively open and close access from the electron subsystem to the electron trap, wherein to open access to the electron trap is to apply a first load gate voltage to the load gate to allow the electrons to access the electron trap, and wherein to close access to the electron trap is to apply a second load gate voltage to the load gate to prevent the electrons from accessing the electron trap.
    Type: Application
    Filed: March 13, 2020
    Publication date: October 1, 2020
    Inventors: Johannes Pollanen, Niyaz Beysengulov, David Rees