Abstract: The method of manufacturing a passivated solar cell comprises the steps of: (1) providing an electrically conductive region at a first side of a semiconductor substrate provided with a textured surface, which comprises dopant atoms of p-type conductivity, and particularly boron; (2) providing a passivation by applying a tunnelling dielectric layer and a polysilicon layer and carrying out an anneal so as to diffuse dopant atoms from the electrically conductive region into the polysilicon layer. A hydrogenated silicon nitride or silicon oxynitride layer may be present on top of the polysilicon layer. The resulting solar cell has a significantly increased lifetime of charge carriers and therewith enhanced open-circuit voltage.

Abstract: The method of manufacturing of a solar cell comprises the steps of: providing a semiconductor substrate (100) comprising an electrically conductive region (11) extending at a first side thereof; and providing a tunnelling oxide (13) by thermal oxidation followed by a boron doped polysilicon LPCVD deposited layer on the second side of the semiconductor substrate. Herein, the provision of the doped polysilicon layer (20) comprises depositing a multilayer stack of first sublayers (21, 22, 23) of silicon and second sublayers (31, 32) of boron dopant in alternation, and subsequent annealing. Thereafter the solar cell is finalized with passivation layers on at least the first side and suitable metallization layers on the emitter and base regions.

Abstract: The method of manufacturing a solar cell comprises the steps of: (a) providing the semiconductor substrate in a deposition chamber of a vapour deposition apparatus, which semiconductor substrate comprises a passivation layer at a first side thereof which passivation layer is patterned to define contact areas at which the copper-containing conductor is present; (b) supplying a gaseous silicon species into the deposition chamber, resulting in the formation of a surface layer of a copper silicide on a surface of the copper-containing conductor and in the formation of amorphous silicon on top of the passivation layer, and (c) providing a protective layer of an insulating silicon compound on the surface layer, wherein the protective cover comprising both the surface layer and the protective layer.

Abstract: The method of manufacturing a solar cell, comprising the steps of providing a solar cell device comprising a semiconductor body (10) and having a first side (11) and an opposed second side (12), which first side is intended for capturing incident light and which second side is intended for assembly to a carrier, which solar cell device comprises a first contact region (13) in the semiconductor body (10) at one of the first (11) and the second side (12); applying an optically transparent structure (22) of electrically insulating material to at least one of the sides (11, 12) of the solar cell device, which structure is patterned to form an aperture to the first contact region (13); providing a contact structure (41, 42, 43) of electrically conducting material in said aperture by means of electrochemical deposition.

Abstract: The method of manufacturing a solar cell comprises the steps of: (a) providing the semiconductor substrate in a deposition chamber of a vapour deposition apparatus, which semiconductor substrate comprises a passivation layer at a first side thereof which passivation layer is patterned to define contact areas at which the copper-containing conductor is present; (b) supplying a gaseous silicon species into the deposition chamber, resulting in the formation of a surface layer of a copper silicide on a surface of the copper-containing conductor and in the formation of amorphous silicon on top of the passivation layer, and (c) providing a protective layer of an insulating silicon compound on the surface layer, wherein the protective cover comprising both the surface layer and the protective layer.

Abstract: The manufacturing of the solar cell comprises the etching of a via hole (2) with a tapered shape such that the diameter (A) at a first side (1a) of the substrate (1), intended as a main side for capturing incident light, is larger than the diameter (B) at the second side (1b) of the substrate (1). The first doped region (3) extends to a first surface (11) in the via hole (2). The second doped region (5) is present at the second side (1b) of the substrate (1) and is suitably formed by ion implantation. The resulting solar cell has an appropriate isolation between first doped region (3) and second doped region (5) over a second surface (12) in the via hole (2) and is suitably provided with a deep junction between the first doped region (3) and dopant in the substrate (1).

Abstract: The manufacturing of the solar cell comprises the etching of a via hole (2) with a tapered shape such that the diameter (A) at a first side (1a) of the substrate (1), intended as a main side for capturing incident light, is larger than the diameter (B) at the second side (1b) of the substrate (1). The first doped region (3) extends to a first surface (11) in the via hole (2). The second doped region (5) is present at the second side (1b) of the substrate (1) and is suitably formed by ion implantation. The resulting solar cell has an appropriate isolation between first doped region (3) and second doped region (5) over a second surface (12) in the via hole (2) and is suitably provided with a deep junction between the first doped region (3) and dopant in the substrate (1).