Abstract: The invention proposes a method for processing a sample with a processing arrangement, comprising the steps of: taking up a particle adhering on a sample surface of the sample with a measuring tip of the processing arrangement; modifying a physical and/or chemical nature of a surface section on the sample or on a deposition unit for providing an activated surface section; and moving the measuring tip into an interaction region of the activated surface section in which an attractive interaction acts between the particle taken up by the measuring tip and the activated surface section in order to transfer the particle from the measuring tip to the activated surface section.

Abstract: A method, a device and a computer program for repairing a defect of a mask for lithography, in particular an EUV mask, are described. A method of repairing a defect of a mask for lithography, in particular an EUV mask, comprises the following steps: (a.) carrying out a first repair step on the defect using a first repair dose, wherein the defect transitions from an initial topology to a first defect topology as a result; (b.) determining an influence of the first repair step on the topology of the defect; (c.) determining a second defect topology for the defect, which is intended to be achieved by way of a second repair step on the defect; and (d.) 1 0 determining a second repair dose for the second repair step, at least in part on the basis of the determined influence of the first repair step on the topology of the defect and the second defect topology. The method may further comprise step (e.) of carrying out the second repair step using the second repair dose.