Abstract: The invention is a method for determining an output value, which is equivalent to a pressure or a value proportional to the pressure, comprising a relative pressure sensor with at least one measured capacity formed between a basic body and a measuring membrane and at least one reference capacity formed between the basic body and the measuring membrane, with the determination of the output value comprising at least the following steps: (1) determining the measured capacity, (2) determining the reference capacity, (3) comparing a value of a first function FZ of the reference capacity to the measured capacity and (4) issuing A=FQ(CM,CR) for CM=FZ(CR) A=FCR(CR) for CM>FZ(CR) A=FCM(CM) for CM<FZ(CR) as the output value.

Abstract: The invention is a method for determining an output value, which is equivalent to a pressure or a value proportional to the pressure, comprising a relative pressure sensor with at least one measured capacity formed between a basic body and a measuring membrane and at least one reference capacity formed between the basic body and the measuring membrane, with the determination of the output value comprising at least the following steps: (1) determining the measured capacity, (2) determining the reference capacity, (3) comparing a value of a first function FZ of the reference capacity to the measured capacity and (4) issuing A=FQ(CM,CR) for CM=FZ(CR) A=FCR(CR) for CM>FZ(CR) A=FCM(CM) for CM<FZ(CR) as the output value.

Abstract: A method for producing a selective doping structure in a semiconductor substrate in order produce a photovoltaic solar cell. The method includes the following steps: A) applying a doping layer (2) to the emitter side of the semiconductor substrate, B) locally heating a melting region of the doping layer (2) and a melting region of the semiconductor substrate lying under the doping layer (2) in such a way that dopant diffuses from the doping layer (2) into the melted semiconductor substrate via liquid-liquid diffusion, so that a high doping region (3) is produced after the melt mixture solidifies, C) producing the planar low doping region by globally heating the semiconductor substrate, D) removing the doping layer (2) and E) removing or converting a layer of the semiconductor substrate on the doping side in such a way that part of the low doping region and of the high doping region close to the surface is removed or is converted into an electrically non-conducting layer.

Abstract: A method for producing a selective doping structure in a semiconductor substrate in order produce a photovoltaic solar cell. The method includes the following steps: A) applying a doping layer (2) to the emitter side of the semiconductor substrate, B) locally heating a melting region of the doping layer (2) and a melting region of the semiconductor substrate lying under the doping layer (2) in such a way that dopant diffuses from the doping layer (2) into the melted semiconductor substrate via liquid-liquid diffusion, so that a high doping region (3) is produced after the melt mixture solidifies, C) producing the planar low doping region by globally heating the semiconductor substrate, D) removing the doping layer (2) and E) removing or converting a layer of the semiconductor substrate on the doping side in such a way that part of the low doping region and of the high doping region close to the surface is removed or is converted into an electrically non-conducting layer.