Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1b. The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.

Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1b. The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.

Abstract: A multi-flame burner is disclosed with burner heads, which are set up to generate at least one burner flame directed along a respective flame axis when supplied with a fuel, wherein the flame axes of respectively adjacent burner heads are inclined relative to each other. A method for preheating a workpiece, in particular a pipe or large-diameter pipe, using a multi-flame burner is also disclosed.

Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1b. The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.

Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1b. The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.

Abstract: A multi-flame burner is disclosed with burner heads, which are set up to generate at least one burner flame directed along a respective flame axis when supplied with a fuel, wherein the flame axes of respectively adjacent burner heads are inclined relative to each other. A method for preheating a workpiece, in particular a pipe or large-diameter pipe, using a multi-flame burner is also disclosed.

Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1b. The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.

Abstract: An optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1b. The n-contact layer contains a TCO layer and a mirror layer, the TCO-layer being arranged between the n-side of the semiconductor body and the mirror layer.

Abstract: An optical fiber cable includes a bundle of a plurality of loose tubes held by a polypropylene binder. The polypropylene binder sustains the heat when a hot cable sheath is applied during the cable manufacturing process. This prevents the polypropylene binder from shrinking and cutting into the loose tubes, which cause indentations. Therefore, the resulting optical fiber cable is substantially free from indentations.

Abstract: An optical fiber cable includes a bundle of a plurality of semi-ridged loose tubes held by a polypropylene binder. The polypropylene binder sustains the heat when a hot cable sheath is applied during the cable manufacturing process. This prevents the polypropylene binder from shrinking and cutting into the loose tubes, which cause indentations. Therefore, the resulting optical fiber cable is substantially free from indentations.

Abstract: An optoelectronic semiconductor chip includes a semiconductor body of semiconductor material, a p-contact layer and an n-contact layer. The semiconductor body includes an active layer intended for generating radiation. The semiconductor body includes a p-side and an n-side, between which the active layer is arranged. The p-contact layer is intended for electrical contacting the p-side. The n-contact layer is intended for electrical contacting the n-side 1b. The n-contact layer contains a TCO layer and a minor layer, the TCO-layer being arranged between the n-side of the semiconductor body and the minor layer.

Abstract: A multi-flame burner includes burner heads which are set up to generate at least one burner flame directed along a respective flame axis when supplied with a fuel, wherein the flame axes of respectively adjacent burner heads are inclined relative to each other. A method for preheating a workpiece, in particular a pipe or large-diameter pipe, is provided.

Abstract: A multiflame burner with burner nozzles which can be loaded with fuel gas, particularly for thermal material processing methods, in which at least one of the burner nozzles is provided with at least one auxiliary nozzle opening for generating an auxiliary flame arranged laterally to a main nozzle arrangement for generating a working flame and in the direction of at least one adjacent burner nozzle.