Abstract: The invention relates to a method of manufacturing a semiconductor device comprising the step of removing a silicon and nitrogen containing material by means of wet etching with an aqueous solution comprising hydrofluoric acid in a low concentration, the aqueous solution being applied under elevated pressure to reach a temperature above 100° C.

Abstract: The invention relates to a method of manufacturing a semiconductor device comprising the step of removing a silicon and nitrogen containing material by means of wet etching with an aqueous solution comprising hydrofluoric acid in a low concentration, the aqueous solution being applied under elevated pressure to reach a temperature above 100° C.

Abstract: The invention relates to a method of manufacturing a semiconductor device, comprising the provision of a substrate (1) with a layer of silicon (3) thereon, an inorganic anti-reflective layer (4) applied to the layer of silicon (3), and a resist mask (6) applied to the inorganic anti-reflective layer (4), which method comprises the steps of:

Abstract: The invention relates to a method of manufacturing a semiconductor device, comprising the provision of a substrate (1) having a dielectric layer (2) on this substrate (1), a conductive layer (3) on the dielectric layer (2), an inorganic anti-reflection coating (4) on the conductive layer (3), and a resist mask (6) on the inorganic anti-reflection coating (4). The method further comprises the following steps: patterning the inorganic anti-reflection coating (4) by means of the resist mask (6), patterning the conductive layer (3) by etching down to the dielectric layer (2), removing the resist mask (6), and removing the inorganic anti-reflection coating (4). According to the invention, the inorganic anti-reflection coating (4) is removed by means of a dry etch, using a polymerizing gas. It is achieved by this that no or hardly any changes in the critical dimension will occur.

Abstract: A point of presence with data collecting means (24; 43) arranged for collecting predetermined data and having a first output for outputting said predetermined data at a first transmission rate, the point of presence having forwarding means (22, 28(1), 28(2); 44) with a forwarding means output for outputting data to a dedicated telecommunication network (8) at a second transmission rate differing from said first transmission rate, said point of presence also having feedback means (26(1), 26(2), 26(3), 26(4); 46, 48; 46, 48, 26(5), 52) having a feedback input and a feedback output, said feedback means being arranged to receive said predetermined data at said first transmission rate from said data collecting means (24; 43), said forwarding means (22, 28(1), 28(2); 44) being connected to said feedback output for receiving said predetermined data and forwarding these predetermined data to said dedicated telecommunication network (8) at said second transmission rate.

Abstract: The invention relates to a method of manufacturing a semiconductor device, comprising the provision of a substrate (1) having a dielectric layer (2) on this substrate (1), a conductive layer (3) on the dielectric layer (2), an inorganic anti-reflection coating (4) on the conductive layer (3), and a resist mask (6) on the inorganic anti-reflection coating (4).