Patents by Inventor Johannes Volkl
Johannes Volkl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11420867Abstract: A process for the combined production of methanol and ammonia, wherein a reactant stream includes carbon monoxide is supplied to a recovery assembly to obtain first and second hydrogen-containing streams, each having an increased molar proportion of hydrogen compared to the reactant stream. The recovery assembly includes a shift conversion in which the carbon monoxide of at least one carbon monoxide-containing stream is at least partially converted into hydrogen and carbon dioxide by reaction with steam to obtain a converted stream having hydrogen and carbon dioxide at least partially recycled to a hydrogen recovery from which the first and second hydrogen-containing streams are obtained. A nitrogen stream and, at least partially, the first hydrogen-containing stream are supplied to an ammonia reactor assembly for at least partial conversion into ammonia and, at least partially, the second hydrogen-containing stream is supplied to a methanol reactor assembly for at least partial conversion into the methanol.Type: GrantFiled: October 8, 2018Date of Patent: August 23, 2022Assignees: GASCONTEC AG, THYSSENKRUPP INDUSTRIAL SOLUTIONS AGInventors: Alexander Schulz, Johannes Völkl, Sina Kunz, Dierk Müller, Ulrich Koss
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Publication number: 20210198105Abstract: A process for the combined production of methanol and ammonia, wherein a reactant stream includes carbon monoxide is supplied to a recovery assembly to obtain first and second hydrogen-containing streams, each having an increased molar proportion of hydrogen compared to the reactant stream. The recovery assembly includes a shift conversion in which the carbon monoxide of at least one carbon monoxide-containing stream is at least partially converted into hydrogen and carbon dioxide by reaction with steam to obtain a converted stream having hydrogen and carbon dioxide at least partially recycled to a hydrogen recovery from which the first and second hydrogen-containing streams are obtained. A nitrogen stream and, at least partially, the first hydrogen-containing stream are supplied to an ammonia reactor assembly for at least partial conversion into ammonia and, at least partially, the second hydrogen-containing stream is supplied to a methanol reactor assembly for at least partial conversion into the methanol.Type: ApplicationFiled: October 8, 2018Publication date: July 1, 2021Inventors: Alexander SCHULZ, Johannes VÖLKL, Sina KUNZ, Dierk MÜLLER, Ulrich KOSS
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Patent number: 10781498Abstract: The invention relates to a plant complex for steel production comprising a blast furnace for producing pig iron, a converter steel mill for producing crude steel and a gas-conducting system for gases that occur when producing the pig iron and/or producing the crude steel. According to the invention, the plant complex additionally has a chemical plant or biotechnological plant, connected to the gas-conducting system, and also energy storage for covering at least part of the electricity demand of the plant complex. Also the subject of the invention is a method for operating the plant complex.Type: GrantFiled: December 11, 2014Date of Patent: September 22, 2020Assignee: THYSSENKRUPP AGInventors: Reinhold Achatz, Jens Wagner, Markus Oles, Peter Schmöle, Ralph Kleinschmidt, Christoph Meißner, Niels Bredemeyer, Johannes Völkl
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Publication number: 20160319383Abstract: The invention relates to a plant complex for steel production comprising a blast furnace for producing pig iron, a converter steel mill for producing crude steel and a gas-conducting system for gases that occur when producing the pig iron and/or producing the crude steel. According to the invention, the plant complex additionally has a chemical plant or biotechnological plant, connected to the gas-conducting system, and also energy storage for covering at least part of the electricity demand of the plant complex. Also the subject of the invention is a method for operating the plant complex.Type: ApplicationFiled: December 11, 2014Publication date: November 3, 2016Inventors: Reinhold Achatz, Jens Wagner, Markus Oles, Peter Schmöle, Ralph Kleinschmidt, Christoph Meißner, Niels Bredemeyer, Johannes Völkl
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Patent number: 8138511Abstract: A radiation-emitting semiconductor component has an improved radiation efficiency. The semiconductor component has a multilayer structure with an active layer for generating radiation within the multilayer structure and also a window having a first and a second main surface. The multi-layer structure adjoins the first main surface of the window. At least one recess, such as a trench or a pit, is formed in the window from the second main surface for the purpose of increasing the radiation efficiency. The recess preferably has a trapezoidal cross section tapering toward the first main surface and can be produced for example by sawing into the window.Type: GrantFiled: December 7, 2006Date of Patent: March 20, 2012Assignee: Osram AGInventors: Johannes Baur, Dominik Eisert, Michael Fehrer, Berthold Hahn, Volker Härle, Marianne Ortmann, Uwe Strauss, Johannes Völkl, Ulrich Zehnder
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Patent number: 7556974Abstract: An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.Type: GrantFiled: August 10, 2006Date of Patent: July 7, 2009Assignee: Osram Opto Semiconductors GmbHInventors: Volker Harle, Berthold Hahn, Hans-Jurgen Lugauer, Helmut Bolay, Stefan Bader, Dominik Eisert, Uwe Strauss, Johannes Volkl, Ulrich Zehnder, Alfred Lell, Andreas Weimar
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Publication number: 20080179380Abstract: A radiation-emitting semiconductor component has an improved radiation efficiency. The semiconductor component has a multilayer structure with an active layer for generating radiation within the multilayer structure and also a window having a first and a second main surface. The multi-layer structure adjoins the first main surface of the window. At least one recess, such as a trench or a pit, is formed in the window from the second main surface for the purpose of increasing the radiation efficiency. The recess preferably has a trapezoidal cross section tapering toward the first main surface and can be produced for example by sawing into the window.Type: ApplicationFiled: December 7, 2006Publication date: July 31, 2008Inventors: Johannes Baur, Dominik Eisert, Michael Fehrer, Berthold Hahn, Volker Harle, Marianne Ortmann, Uwe Strauss, Johannes Volkl, Ulrich Zehnder
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Patent number: 7169632Abstract: A radiation-emitting semiconductor component has an improved radiation efficiency. The semiconductor component has a multilayer structure with an active layer for generating radiation within the multilayer structure and also a window having a first and a second main surface. The multi-layer structure adjoins the first main surface of the window. At least one recess, such as a trench or a pit, is formed in the window from the second main surface for the purpose of increasing the radiation efficiency. The recess preferably has a trapezoidal cross section tapering toward the first main surface and can be produced for example by sawing into the window.Type: GrantFiled: September 9, 2003Date of Patent: January 30, 2007Assignee: Osram GmbHInventors: Johannes Baur, Dominik Eisert, Michael Fehrer, Berthold Hahn, Volker Härle, Marianne Ortmann, Uwe Strauss, Johannes Völkl, Ulrich Zehnder
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Publication number: 20060289854Abstract: An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.Type: ApplicationFiled: August 10, 2006Publication date: December 28, 2006Inventors: Volker Harle, Berthold Hahn, Hans-Jurgen Lugauer, Helmut Bolay, Stefan Bader, Dominik Eisert, Uwe Strauss, Johannes Volkl, Ulrich Zehnder, Alfred Lell, Andreas Weimer
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Patent number: 7106090Abstract: An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.Type: GrantFiled: December 16, 2004Date of Patent: September 12, 2006Assignee: Osram Opto Semiconductors GmbHInventors: Volker Harle, Berthold Hahn, Hans-Jurgen Lugauer, Helmut Bolay, Stefan Bader, Dominik Eisert, Uwe Strauss, Johannes Volkl, Ulrich Zehnder, Alfred Lell, Andreas Weimer
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Patent number: 7015514Abstract: A light-emitting diode (1) has a lens body (3) that is fabricated from an inorganic solid. Fastened on the lens body (3) are semiconductor chips (2) that emit light beams (18). Furthermore, the light-emitting diode (1) is provided with a housing (20) that can be screwed into a conventional lamp holder via a thread (21).Type: GrantFiled: January 15, 2002Date of Patent: March 21, 2006Assignee: Osram Opto Semiconductors GmbHInventors: Johannes Baur, Dominik Eisert, Michael Fehrer, Berthold Hahn, Volker Härle, Ulrich Jacob, Werner Plass, Uwe Strauss, Johannes Völkl, Ulrich Zehnder
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Publication number: 20050233484Abstract: A radiation-emitting semiconductor chip (1) having a semiconductor layer sequence (3) comprising at least one active layer (2) that generates an electromagnetic radiation, and having a passivation layer (12) arranged on the radiation-emerging side of the semiconductor layer sequence (3), it being possible to set the degree of transmission of the semiconductor chip by means of the passivation layer.Type: ApplicationFiled: February 28, 2005Publication date: October 20, 2005Applicant: Osram Opto Semiconductors GmbHInventors: Wilhelm Stein, Johannes Volkl, Robert Walter, Oliver Kus, Roland Zeisel
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Publication number: 20050116216Abstract: An optical semiconductor device with a multiple quantum well structure, in which well layers and barrier layers comprising various types of semiconductor layers are alternately layered, in which device well layers (6a) of a first composition based on a nitride semiconductor material with a first electron energy and barrier layers (6b) of a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy are provided, followed, seen in the direction of growth, by a radiation-active quantum well layer (6c), for which the essentially non-radiating well layers (6a) and the barrier layers (6b) arranged in front form a superlattice.Type: ApplicationFiled: December 16, 2004Publication date: June 2, 2005Inventors: Volker Harle, Berthold Hahn, Hans-Jurgen Lugauer, Helmut Bolay, Stefan Bader, Dominik Eisert, Uwe Strauss, Johannes Volkl, Ulrich Zehnder, Alfred Lell, Andreas Weimer
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Patent number: 6897488Abstract: A light-emitting chip (3) has a lens-type coupling-out window (4), whose base area (5) is provided with a mirror area (6). Arranged on a coupling-out area (7) of the coupling-out window (4) is a layer sequence (9), with a photon-emitting pn junction (10). The photons emitted by the pn junction are reflected at the mirror area (6) and can leave the coupling-out window (4) through the coupling-out area (7).Type: GrantFiled: November 6, 2001Date of Patent: May 24, 2005Assignee: Osram Opto Semiconductors GmbHInventors: Johannes Baur, Dominik Eisert, Michael Fehrer, Berthold Hahn, Volker Härle, Ulrich Jacob, Raimund Oberschmid, Werner Plass, Uwe Strauss, Johannes Völkl, Ulrich Zehnder
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Patent number: 6891199Abstract: Proposed for high-performance light-emitting diodes are semiconductor chips (1) whose longitudinal sides are substantially longer than their transverse sides. Light extraction can be substantially improved in this manner.Type: GrantFiled: July 24, 2001Date of Patent: May 10, 2005Assignee: Osram GmbHInventors: Johannes Baur, Dominik Eisert, Michael Fehrer, Berthold Hahn, Volker Harle, Ulrich Jacob, Werner Plass, Uwe Strauss, Johannes Völkl, Ulrich Zehnder
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Patent number: 6849881Abstract: An optical semiconductor device with a multiple quantum well structure, is set out in which well layers and barrier layers, comprising various types of semiconductor layers, are alternately layered. The device well layers comprise a first composition based on a nitride semiconductor material with a first electron energy. The barrier layers comprise a second composition of a nitride semiconductor material with electron energy which is higher in comparison to the first electron energy. The well and barrier layers are in the direction of growth, by a radiation-active quatum well layer which with the essentially non-radiating well layers (6a) and the barrier layers (6b), arranged in front, form a supperlattice.Type: GrantFiled: November 20, 2000Date of Patent: February 1, 2005Assignee: Osram GmbHInventors: Volker Harle, Berthold Hahn, Hans-Jürgen Lugauer, Helmut Bolay, Stefan Bader, Dominik Eisert, Uwe Strauss, Johannes Völkl, Ulrich Zehnder, Alfred Lell, Andreas Weimer
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Publication number: 20040051106Abstract: A light-emitting diode (1) has a lens body (3) that is fabricated from an inorganic solid. Fastened on the lens body (3) are semiconductor chips (2) that emit light beams (18). Furthermore, the light-emitting diode (1) is provided with a housing (20) that can be screwed into a conventional lamp holder via a thread (21).Type: ApplicationFiled: June 25, 2003Publication date: March 18, 2004Applicant: Osram Opto Semiconductors GmbHInventors: Johannes Baur, Dominik Eisert, Michael Fehrer, Berthold Hahn, Volker Harle, Ulrich Jacob, Werner Plass, Uwe Strauss, Johannes Volkl, Ulrich Zehnder
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Publication number: 20040046179Abstract: A radiation-emitting semiconductor component has an improved radiation efficiency. The semiconductor component has a multilayer structure with an active layer for generating radiation within the multilayer structure and also a window having a first and a second main surface. The multi-layer structure adjoins the first main surface of the window. At least one recess, such as a trench or a pit, is formed in the window from the second main surface for the purpose of increasing the radiation efficiency. The recess preferably has a trapezoidal cross section tapering toward the first main surface and can be produced for example by sawing into the window.Type: ApplicationFiled: September 9, 2003Publication date: March 11, 2004Inventors: Johannes Baur, Dominik Eisert, Michael Fehrer, Berthold Hahn, Volker Harle, Marianne Ortmann, Uwe Strauss, Johannes Volkl, Ulrich Zehnder
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Publication number: 20040048429Abstract: A light-emitting chip (3) has a lens-type coupling-out window (4), whose base area (5) is provided with a mirror area (6). Arranged on a coupling-out area (7) of the coupling-out window (4) is a layer sequence (9), with a photon-emitting pn junction (10). The photons emitted by the pn junction are reflected at the mirror area (6) and can leave the coupling-out window (4) through the coupling-out area (7).Type: ApplicationFiled: October 2, 2003Publication date: March 11, 2004Inventors: Johannes Baur, Dominik Eisert, Michael Fehrer, Berthold Hahn, Volker Harle, Ulrich Jacob, Raimund Oberschmid, Werner Plass, Uwe Strauss, Johannes Volkl, Ulrich Zehnder
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Patent number: 6689212Abstract: An &agr;-SiC bulk single crystal is formed from an SiC gas phase by deposition of SiC on an SiC seed crystal. To enable an SiC bulk single crystal of the 15R type to be grown reproducibly and without restricting the seed crystal, the deposition takes place under a uniaxial tensile strength which includes a predetermined angle with the [0001] axis of the bulk single crystal, so that a rhombohedral crystal is formed.Type: GrantFiled: August 20, 2001Date of Patent: February 10, 2004Assignee: Siemens AktiengesellschaftInventors: Harald Kuhn, Rene Stein, Johannes Völkl