Abstract: In a capacitive coupled etch reactor, in which the smaller electrode is predominantly etched, the surface of the larger electrode is increased by a body e.g. a plate, which is on the same electric potential as the larger electrode and which is immersed in the plasma space. A pattern of openings in which plasma may burn is provided in the body so as to control the distribution of the etching effect on a substrate placed on the smaller electrode.

Abstract: In a plasma reactor a pumping compartment is separate from a plasma-treating compartment by a structure which includes a central frame. The frame is suspended to the casing of the reactor via spokes. The spokes allow free expansion and contraction of the frame under thermal loading. The slits between the spokes do not allow plasma ignition there and provide for a small flow resistance between the treatment compartment and the pumping compartment. The frame may act as a downholding member for a substrate on the smaller electrode.

Abstract: In a capacitively coupled etch reactor, in which the smaller electrode is etched, the larger electrode is electrically supplied by a very high frequency supply signal and by a high frequency supply signal. The smaller electrode, acting as a substrate carrier, is connected to ground potential.

Abstract: A method of treating a substrate or of manufacturing a treated substrate includes the following steps: a) first treating a substrate in a first atmosphere of a first pressure, b) subsequently, second treating the first treated substrate in a second atmosphere of a second pressure, wherein the second temperature of the substrate is different from the first temperature and the second pressure is lower than the first pressure, c) between steps a) and b) locking in the first treated substrate from the first atmosphere into the second atmosphere, d) during locking in, heating or cooling the first treated substrate from the first temperature towards the second temperature.

Abstract: In a capacitively coupled etch reactor, in which the smaller electrode is etched, the larger electrode is electrically supplied by a very high frequency supply signal and by a high frequency supply signal. The smaller electrode, acting as a substrate carrier, is connected to ground potential.

Abstract: In a plasma reactor a pumping compartment is separate from a plasma-treating compartment by a structure which includes a central frame. The frame is suspended to the casing of the reactor via spokes. The spokes allow free expansion and contraction of the frame under thermal loading. The slits between the spokes do not allow plasma ignition there and provide for a small flow resistance between the treatment compartment and the pumping compartment. The frame may act as a downholding member for a substrate on the smaller electrode.

Abstract: In a capacitive coupled etch reactor, in which the smaller electrode is predominantly etched, the surface of the larger electrode is increased by a body e.g. a plate, which is on the same electric potential as the larger electrode and which is immersed in the plasma space. A pattern of openings in which plasma may burn is provided in the body so as to control the distribution of the etching effect on a substrate placed on the smaller electrode.

Abstract: Provided is an aircraft having a spherical body which generates buoyancy or which may generate buoyancy when filled with gas, wherein the aircraft further comprises four actuation units arranged on the surface of the body for movement of the aircraft in a translation and/or rotation through air, and at least one camera arranged on or in the surface of the body. Further provided is a method for providing optical information to a person in the environment of a flying aircraft, a method for providing optical information about an object and/or surveying of an object, a method for transmission of acoustic information and a method for observing or tracking an object.