Abstract: Dual-interface Integrated Circuit (IC) card components and methods for manufacturing the dual-interface IC card components are described. In an embodiment, a dual-interface IC card component includes a single-sided contact base structure, which includes a substrate with an electrical contact layer. On the single-sided contact base structure, one or more antenna contact leads are attached to the single-sided contact base structure to form a dual-interface contact structure, which is a component of a dual-interface IC card. Other embodiments are also described.

Abstract: A die comprising a body of semiconductor material, said body configured to receive a solder layer of gold containing alloy for use in die bonding said die to a substrate, wherein the die includes an interface layer on a surface of the body for receiving the solder layer, the interface layer having a plurality of sub-layers of different metals.

Abstract: Dual-interface Integrated Circuit (IC) card components and methods for manufacturing the dual-interface IC card components are described. In an embodiment, a dual-interface IC card component includes a single-sided contact base structure, which includes a substrate with an electrical contact layer. On the single-sided contact base structure, one or more antenna contact leads are attached to the single-sided contact base structure to form a dual-interface contact structure, which is a component of a dual-interface IC card. Other embodiments are also described.

Abstract: A die comprising a body of semiconductor material, said body configured to receive a solder layer of gold containing alloy for use in die bonding said die to a substrate, wherein the die includes an interface layer on a surface of the body for receiving the solder layer, the interface layer having a plurality of sub-layers of different metals.

Abstract: A method of manufacturing a semiconductor device (10) including a semiconductor element (1), such as a transistor, which is provided, on the rear side, with a conductive layer (3) including gold, and which is attached, on said side, to a conductive plate (2), such as a lead frame (2), by way of a silver-containing organic matrix (4) which is thermally cured. Subsequently, the element (1) is connected to the plate (2) by way of wire connectors (5) and provided with an encapsulation (6). The silver paste (4) is cured at a temperature of at least 350° C., preferably approximately 400° C. In this way, an excellent adhesion of the element (1) to the plate (2) is obtained, enabling the wired connectors (5) to be subsequently provided by way of wire bonding without elements (1) becoming detached from the plate (2). Moreover, the connection is still sufficiently flexible to deal with a difference in thermal expansion between the element (1) and the plate (2), even if the latter is made of copper.

Abstract: The invention relates to a method of manufacturing a semiconductor device (10) comprising a semiconductor element (1), such as a transistor, which is provided, on the rear side, with a conductive layer (3) comprising gold, and which is attached, on said side, to a conductive plate (2), such as a lead frame (2), by means of a silver-containing organic matrix (4) which is thermally cured. Subsequently, the element (1) is connected to the plate (2) by means of wire connectors (5) and provided with an encapsulation (6).