Abstract: The electronic device (100) comprises a semiconductor element (1) (e.g. a transistor), an encapsulation (5) and an electrically conductive layer (3) with a first and a second contact pad (11,12), used as signal pads, and a third contact pad (13) used as ground pads. Due to the shape of the contact pads (11,12,13), the spacing (200) is continuous, with a small entrance in between of the first and second contact pads (11,12). Consequently, the parasitic inductance is reduced and the device (100) is suitable for use at frequencies below and above 30 GHz, particularly up to 40 GHz.

Abstract: The electronic device (100) comprises an electrical element (30), for instance a MEMS capacitor or a BAW filter in a cavity (37) that is protected from the environment by a cover (38). The cover (38) is a patterned layer which is mechanically embedded in isolating material (7) present beside the cavity (37) and may further include contact pads (41). The device (100) may be suitably manufactured from an accurately folded foil including a patterned layer and a sacrifice layer. After applying the foil to the cavity (37) the isolating material (7) is provided and the sacrifice layer is removed. The patterned layer, or part thereof, stays behind and forms the cover (38).

Abstract: The invention relates to a method of manufacturing a semiconductor device (10), wherein a semiconductor element (1) provided with a number of connection regions (2) is fitted between a first, electroconductive plate (3) and a second plate (4), wherein two connection conductors (3A, 3B) are formed, from the first plate (3), for the two connection regions (2A, 2B) of the element (1), wherein a passivating encapsulation (5) is provided between the plates (3, 4) and around the element (1), and wherein the device (10) is formed by applying a mechanical separating technique in two mutually perpendicular directions (L, M). In a method according to the invention, the connection conductors (3A, 3B) are formed by providing a mask (6) on the first conducting plate (3) in such a manner that a part (3C) of the plate (3) situated between the connection regions (2A, 2B) remains exposed, which part is subsequently removed by etching.

Abstract: The invention relates to a method of manufacturing a semiconductor device (10), whereby an electric element (11) is attached on or above a carrier plate (4) which comprises a first layer (5) of a first material and a second layer (2) of a second material which differs from the first, which is electrically conducting, which has a smaller thickness than the first layer (5), and in which a cavity (6) is formed that extends at least to the first layer (5). The element (11) is electrically connected to parts (2) of the carrier plate (4) at first connection regions (1), and an encapsulation is deposited around the element (11) and in the cavity (6). Then so much of the first layer (5) of the carrier plate (4) is removed that the cavity (6) is reached, whereby second connection conductors (2) are formed from the remaining portion of the carrier plate (4).

Abstract: The electronic device (100) comprises a body (20) with a cavity (30) wherein a semiconductor element (10) and a thermally conductive layer (33) are present. The cavity (30) is filled with an encapsulation (35) of an electrically insulating material wherein contact faces (47, 48) are mechanically anchored.

Abstract: A method of connecting a metal (1) with a ceramic material (2) comprises the steps of providing a through-hole (3) in the ceramic material and positioning the metal (1) to be connected to the ceramic material (2) proximate to the ceramic material (2) with the through-hole (3). Subsequently, the metal (1) is melted (7) proximate to the through-hole (3). A pressure difference prevails between the side of the ceramic (2) remote from the metal and the side of the metal (1) remote from the ceramic material (2). A larger pressure prevails at the side of the metal (1) remote from the ceramic material (2). The pressure difference causes the melt (7) to be pressed into the through-hole (3) in the ceramic material (2). The through-hole (3) has such a shape that, after solidification, the solidified material (14) and the through-hole (3) have a complementary locking form.

Abstract: The invention relates to a method of manufacturing a semiconductor device (10), wherein a semiconductor element (1) provided with a number of connection regions (2) is fitted between a first, electroconductive plate (3) and a second plate (4), wherein two connection conductors (3A, 3B) are formed, from the first plate (3), for the two connection regions (2A, 2B) of the element (1), wherein a passivating encapsulation (5) is provided between the plates (3, 4) and around the element (1), and wherein the device (10) is formed by applying a mechanical separating technique in two mutually perpendicular directions (L, M). In a method according to the invention, the connection conductors (3A, 3B) are formed by providing a mask (6) on the first conducting plate (3) in such a manner that a part (3C) of the plate (3) situated between the connection regions (2A, 2B) remains exposed, which part is subsequently removed by etching.

Abstract: In a method of manufacturing modules (4), each with at least one integrated circuit (2), the integrated circuits (2) are separated from a previously manufactured circuit configuration (1), which is in the form of a flexible film comprising a plurality of integrated circuits (2) on the basis of a polymer, by a combined stamping-vacuum conveying device (6), after which each of the separated integrated circuits (2) is conveyed to a module substrate (5) and connected to the module substrate (5) so as to form a module (4).

Abstract: The invention relates to a method of manufacturing a semiconductor device (10), wherein a semiconductor element (1) provided with a number of connection regions (2) is fitted between a first, electroconductive plate (3) and a second plate (4), wherein two connection conductors (3A, 3B) are formed, from the first plate (3), for the two connection regions (2A, 2B) of the element (1), wherein a passivating encapsulation (5) is provided between the plates (3, 4) and around the element (1), and wherein the device (10) is formed by applying a mechanical separating technique in two mutually perpendicular directions (L, M).

Abstract: A method of connecting a metal (1) with a ceramic material (2) comprises the steps of providing a through-hole (3) in the ceramic material and positioning the metal (1) to be connected to the ceramic material (2) proximate to the ceramic material (2) with the through-hole (3). Subsequently, the metal (1) is melted (7) proximate to the through-hole (3). A pressure difference prevails between the side of the ceramic (2) remote from the metal and the side of the metal (1) remote from the ceramic material (2). A larger pressure prevails at the side of the metal (1) remote from the ceramic material (2). The pressure difference causes the melt (7) to be pressed into the through-hole (3) in the ceramic material (2). The through-hole (3) has such a shape that, after solidification, the solidified material (14) and the through-hole (3) have a complementary locking form.

Abstract: An electronic device includes an electronic component 2, 3, such as a SAW (=Surface Acoustic Wave) filter 2, 3 having connection areas 4, 5. The filter 2, 3 is sealed off from the environment by means of a cover 6 forming a cavity 7 above the filter 2, 3. According to the invention, the cover 6 is formed by a lacquer layer 6A which is provided, at the location of the filter 2, 3, with an opening 7′ and which is covered with a photoresist layer 6B closing the opening 7′ such that the cavity 7 thus formed has a thickness above zero everywhere above the filter 2, 3. This enables an accurate and stable frequency selection by means of the filter 2, 3 and allows the device according to the invention to be very compact and easy to manufacture. Thus, the device according to the invention is very suitable for use in an application such as a mobile telephone, also after integration of the device with a semiconductor device.

Abstract: In a method of manufacturing modules (4), each with at least one integrated circuit (2), the integrated circuits (2) are separated from a previously manufactured circuit configuration (1), which is in the form of a flexible film comprising a plurality of integrated circuits (2) on the basis of a polymer, by a combined stamping-vacuum conveying device (6), after which each of the separated integrated circuits (2) is conveyed to a module substrate (5) and connected to the module substrate (5) so as to form a module (4).

Abstract: The invention relates to an electronic device comprising an electronic component 2, 3, such as a SAW (=Surface Acoustic Wave) filter 2, 3 having connection areas 4, 5. The filter 2, 3 is sealed off from the environment by means of a cover 6 forming a cavity 7 above the filter 2, 3.

Abstract: An X-ray apparatus includes an X-ray source for producing a beam of X-rays, an X-ray detector for detecting this radiation, and an X-ray filter with filter elements which is arranged between the X-ray source and the X-ray detector so as to attenuate the X-ray beam in each independent filter element individually. Each filter element can contain a liquid filling (22) which is electrically conductive and X-ray absorbing, the value of the X-ray absorptivity of each filter element being discretely adjustable by step-wise adjustment of the level of the liquid filling within each filter element. Each filter element includes an electrode (23) which is positioned between an isolator layer (34) and a substrate (38) in a wall of the filter element in order to apply an electric potential to the wall of this element. Another electric potential is applied to the liquid filling. Therefore, an electric capacitance can be defined per unit of surface area of the filter element.

Abstract: A filter which includes a stack of deformable foils which are locally attached to one another, and also includes comparatively rigid members which are situated to both sides of the stack of foils, extend parallel to the surface of the foils and each of which is attached to an outer surface of the stack of foils by way of a buffer member. The foils can be moved away from one another in a main direction by means of the rigid members, which main direction extends transversely of the surface, in order to form ducts between the foils. The buffer member is then contractible mainly in a direction which extends parallel to the surface and transversely of the ducts.

Abstract: A field effect transistor (T) of the (quasi-)vertical type, which means that in the semiconductor body (10) of the transistor (T), a source (1) and a drain (3) are positioned (approximately) above each other and are separated from each other by the channel region (2), which is connected to a gate region (4), each one of said regions being connected to a connection conductor (6, 7, 11) joining a connection region (7, 8, 12). The connection regions (7, 8) of the source (1) and the gate (4) are situated on top of the semiconductor body (10). The semiconductor body (10) is provided with a through-hole (9) at least one wall of which is covered with a conductive layer (11), which is connected to the drain (3), and which forms the connection conductor (11) of the drain (3) and which is connected to the connection region (12) for the drain (3) situated on top of the semiconductor body (10). In this way, the transistor (T) is very well suited for surface mounting and is also very easy to manufacture.

Abstract: The invention relates to a method of manufacturing a filter which includes a number of ducts formed by a number of deformable foils. The foils have electrically insulating outer sides, with electrically conductive bands which are separated from one another by electrically insulating bands. The electrically conductive bands on a first outer side of the foil are arranged so as to be offset relative to the electrically conductive bands on the second outer side of the foil. The foils are stacked. The oppositely situated electrically insulating bands of the oppositely situated foils are interconnected. The foils are ultimately moved away from one another in a direction transversely of the foils in order to form the ducts between the interconnected foils. At least one detached, electrically insulating section is situated in a prolongation of at least one electrically conductive band and is not connected to an oppositely situated foil.