Abstract: Compositions and methods of phytopathogenic fungus control are provided, the compositions and methods include a first component of dissolved organic matter (DOM) concentrate having natural organic matter of defined composition, suitable for soil, foliar, and seed coating.

Abstract: One or more insulated conductive wire assemblies are incorporated in a pressure balanced, oil-filled (PBOF) hose. Each conductive wire assembly has a pair of conductive wires each having an insulation layer, an insulating material surrounding the insulated wires, and an outer insulating layer surrounding the insulating material. The insulating material may be selected to have a dielectric constant substantially matching the dielectric constant of the oil in the PBOF hose, so that the insulated pair of conductors perform in the same way both before and after the assembly is submerged in oil in the jumper hose. One or more parameters of the conductive wire assembly are selected such that the assembly has a predetermined impedance when submerged in oil within the PBOF hose.

Abstract: This invention relates to the identification and characterization of specific cellular responses which are associated with tumor necrosis factor receptor 1 (TNFR1) and tumor necrosis factor receptor 1 (TNFR2). Selective modulation of these tumor necrosis factor receptors (TNFRs) Selective modulations of these responses may be useful in the promotion or inhibition of cell growth, for example, in the treatment of disease conditions, including cardiovascular and kidney diseases. Therapeutic methods employed selective TNFR1 and TNFR2 modulators are provided, along with screening methods for the identification of selective TNFR1 and TNFR2 modulators useful in such methods.

Abstract: An electroplating system and method has a needle anode associated with an XYZ or multi-direction positioning device and is configured for plating internal surfaces of holes in metal products. The needle anode is positioned such that an insertion portion of the needle anode is centered over a hole and inserted to a predetermined depth in the hole, with a discharge end located a predetermined distance from the inner end of the hole. Plating solution is supplied to the needle anode and flows continuously during plating from the discharge end of the needle, through a gap between the needle anode and inner surface of the hole, and out of the open end of the hole into a drain. In one example, the metal object is a terminal of an electrical connector and the hole is a solder cup at a terminal end of the connector.

Abstract: The invention relates to a method for healing blood vessels by stimulating the formation of a confluent endothelial autologous cell layer in vivo on an implantable metallic stent having a lumen and a luminal surface, and an exterior surface. More specifically, the method includes implanting the stent with a coating in a patient in need of thereof; wherein the coating includes one or more layers of a matrix covalently adherent on said luminal and exterior surface of said stent containing one or more pharmaceutical substances on said exterior surface and a therapeutically effective amount of a single type of antibody, antibody fragments or combinations thereof being compatible to binding selectively to a specific cell surface antigen of circulating autologous endothelial progenitor cells in peripheral blood. In addition, genetically engineered endothelial progenitor cells can be captured on said luminal surface of stent in vivo, to proliferate to form rapidly a confluent endothelium in situ.

Abstract: An InGaAs n-channel quantum well heterostructure for use in a complementary transistor having a Sb-based p-channel. The heterostructure includes a buffer layer having a lattice constant intermediate that of the n- and p-channel materials and which is configured to accommodate the strain produced by a lattice-constant mismatch between the n-channel and p-channel materials.

Abstract: A semiconductor device including a heterostructure having at least one low-resistivity p-type GaSb quantum well is provided. The heterostructure includes a layer of In0.52Al0.48As on an InP substrate, where the In0.52Al0.48As is lattice matched to InP, followed by an AlAsxSb1-x buffer layer on the In0.52Al0.48As layer, an AlAsxSb1-x spacer layer on the AlAsxSb1-x buffer layer, a GaSb quantum well layer on the AlAsxSb1-x spacer layer, an AlAsxSb1-x barrier layer on the GaSb quantum well layer, an In0.2Al0.8Sb etch-stop layer on the AlAsxSb1-x barrier layer, and an InAs cap. The semiconductor device is suitable for use in low-power electronic devices such as field-effect transistors.

Abstract: Embodiments are disclosed of a switchplexer for performing test operations on a radio device. The switchplexer comprises a plurality of test ports corresponding to a plurality of radio device ports and a plurality of switches for routing test signals between the individual test ports. Processing logic is disclosed for controlling actuation of the switches to route test signals between individual test ports. The switchplexer disclosed herein may be incorporated into a mobile test device for self-test operations or may be used in a manufacturing or maintenance facility for testing and calibration operations.

Abstract: An InGaAs n-channel quantum well heterostructure for use in a complementary transistor having a Sb-based p-channel. The heterostructure includes a buffer layer having a lattice constant intermediate that of the n- and p-channel materials and which is configured to accommodate the strain produced by a lattice-constant mismatch between the n-channel and p-channel materials.

Abstract: An apparatus in one example comprises an antimonide-based compound semiconductor (ABCS) stack, an upper barrier layer formed on the ABCS stack, and a gate stack formed on the upper barrier layer. The upper barrier layer comprises indium, aluminum, and arsenic. The gate stack comprises a base layer of titanium and tungsten formed on the upper barrier layer.

Abstract: A semiconductor device including a heterostructure having at least one low-resistivity p-type GaSb quantum well is provided. The heterostructure includes a layer of InwAl1?wAs on a semi-insulating (100) InP substrate, where the InwAl1?wAs is lattice matched to InP, followed by an AlAsxSb1?x buffer layer on the InwAl1?wAs layer, an AlAsxSb1?x spacer layer on the buffer layer, a GaSb quantum well layer on the spacer layer, an AlAsxSb1?x barrier layer on the quantum well layer, an InyAl1?ySb layer on the barrier layer, and an InAs cap. The semiconductor device is suitable for use in low-power electronic devices such as field-effect transistors.

Abstract: An InGaAs n-channel quantum well heterostructure for use in a complementary transistor having a Sb-based p-channel. The heterostructure includes a buffer layer having a lattice constant intermediate that of the n- and p-channel materials and which is configured to accommodate the strain produced by a lattice-constant mismatch between the n-channel and p-channel materials.

Abstract: One or more insulated conductive wire assemblies are incorporated in a pressure balanced, oil-filled (PBOF) hose. Each conductive wire assembly has a pair of conductive wires each having an insulation layer, an insulating material surrounding the insulated wires, and an outer insulating layer surrounding the insulating material. The insulating material may be selected to have a dielectric constant substantially matching the dielectric constant of the oil in the PBOF hose, so that the insulated pair of conductors perform in the same way both before and after the assembly is submerged in oil in the jumper hose. One or more parameters of the conductive wire assembly are selected such that the assembly has a predetermined impedance when submerged in oil within the PBOF hose.

Abstract: An InGaAs n-channel quantum well heterostructure for use in a complementary transistor having a Sb-based p-channel. The heterostructure includes a buffer layer having a lattice constant intermediate that of the n- and p-channel materials and which is configured to accommodate the strain produced by a lattice-constant mismatch between the n-channel and p-channel materials.

Abstract: A semiconductor device including a heterostructure having at least one low-resistivity p-type GaSb quantum well is provided. The heterostructure includes a layer of In0.52Al0.48As on an InP substrate, where the In0.52Al0.48As is lattice matched to InP, followed by an AlAsxSb1-x buffer layer on the In0.52Al0.48As layer, an AlAsxSb1-x spacer layer on the AlAsxSb1-x buffer layer, a GaSb quantum well layer on the AlAsxSb1-x spacer layer, an AlAsxSb1-x barrier layer on the GaSb quantum well layer, an In0.2Al0.8Sb etch-stop layer on the AlAsxSb1-x barrier layer, and an InAs cap. The semiconductor device is suitable for use in low-power electronic devices such as field-effect transistors.

Abstract: On a typical motherboard the processor and memory are separated by a printed circuit data bus that traverses the motherboard. Throughput, or data transfer rate, on the data bus is much lower than the rate at which a modern processor can operate. The difference between the data bus throughput and the processor speed significantly limits the effective processing speed of the computer when the processor is required to process large amounts of data stored in the memory. The processor is forced to wait for data to be transferred to or from the memory, leaving the processor under-utilized. The delays are compounded in a distributed computing system including a number of computers operating in parallel. The present disclosure describes systems, method and apparatus that alleviate delays so that memory access bottlenecks are not compounded within distributed computing systems.

Abstract: A vertical axis wind turbine comprising at least two rotor portions, each portion having a bottom, a top, and a curved horizontal cross section when seen in top view. A top cap may be provided that has a convex portion corresponding to each rotor portion that extends forwardly in a windward direction. Each rotor portion may comprise two angled rotor sections that meet at substantially a vertical midpoint of the rotor portion. The angled sections may be angled rearwardly in a leeward direction and/or radially and may be angled from 1 to 20 degrees with respect to vertical. There may be three or more rotor portions and the turbine may be comprised of one or more vertically stacked sections.

Abstract: A complementary metal oxide semiconductor (CMOS) device in which a single InxGa1-xSb quantum well serves as both an n-channel and a p-channel in the same device and a method for making the same. The InxGa1-xSb layer is part of a heterostructure that includes a Te-delta doped AlyGa1-ySb layer above the InxGa1-xSb layer on a portion of the structure. The portion of the structure without the Te-delta doped AlyGa1-ySb barrier layer can be fabricated into a p-FET by the use of appropriate source, gate, and drain terminals, and the portion of the structure retaining the Te-delta doped AlyGa1-ySb layer can be fabricated into an n-FET so that the structure forms a CMOS device, wherein the single InxGa1-xSb quantum well serves as the transport channel for both the n-FET portion and the p-FET portion of the heterostructure.

Abstract: Methods and systems related to the display of primary and secondary search results are provided. Search results are displayed to the user without requiring the user to perform any tasks to view the entire set of search results. The user may then request secondary searches based on the displayed primary search results through performing a single action. Secondary search results are displayed along with the primary search results.