Abstract: An electrochemical system and method are disclosed for On Site Generation (OSG) of oxidants, such as free available chlorine, mixed oxidants and persulfate. Operation at high current density, using at least a diamond anode, provides for higher current efficiency, extended lifetime operation, and improved cost efficiency. High current density operation, in either a single pass or recycle mode, provides for rapid generation of oxidants, with high current efficiency, which potentially allows for more compact systems. Beneficially, operation in reverse polarity for a short cleaning cycle manages scaling, provides for improved efficiency and electrode lifetime and allows for use of impure feedstocks without requiring water softeners. Systems have application for generation of chlorine or other oxidants, including mixed oxidants providing high disinfection rate per unit of oxidant, e.g. for water treatment to remove microorganisms or for degradation of organics in industrial waste water.

Abstract: A method of fabrication, a device structure and a submount comprising high thermal conductivity (HTC) diamond on a HTC metal substrate, for thermal dissipation, are disclosed. The surface roughness of the diamond layer is controlled by depositing diamond on a sacrificial substrate, such as a polished silicon wafer, having a specific surface roughness. Following deposition of the diamond layer, an adhesion layer, e.g. comprising a refractory metal, such as tantalum, and at least one layer of HTC metal is provided. The HTC metal substrate is preferably copper or silver, and may be provided by electroforming metal onto a thin sputtered base layer, and optionally bonding another metal layer. The electrically non-conductive diamond layer has a smooth exposed surface, preferably ?10 nm RMS, suitable for patterning of contact metallization and/or bonding to a semiconductor device. Methods are also disclosed for patterning the diamond on metal substrate to facilitate dicing.

Abstract: Disclosed is a system and method for treatment of wastewater to destroy organic contaminants using an electrochemical advanced oxidation process. In particular, the method comprises a multistep process, comprising a) generating a concentrated oxidant solution comprising a peroxy oxidant species, such as persulfate or hydrogen peroxide; b) mixing wastewater comprising organic contaminants with the concentrated oxidant solution to provide a mixture comprising wastewater and diluted oxidant, the wastewater and concentrated oxidant solution being mixed in a prescribed ratio to provide a desired concentration ratio of oxidant species to contaminants; and c) in an electrochemical cell comprising a diamond anode, electrolyzing the mixture of wastewater and diluted oxidant, comprising electrochemically activating the peroxy oxidant species for oxidation and destruction of the contaminants.

Abstract: A reliable long life RF-MEMS capacitive switch is provided with a dielectric layer comprising a “fast discharge diamond dielectric layer” and enabling rapid switch recovery, dielectric layer charging and discharging that is efficient and effective to enable RF-MEMS switch operation to greater than or equal to 100 billion cycles.

Abstract: A reliable long life RF-MEMS capacitive switch is provided with a dielectric layer comprising a “fast discharge diamond dielectric layer” and enabling rapid switch recovery, dielectric layer charging and discharging that is efficient and effective to enable RF-MEMS switch operation to greater than or equal to 100 billion cycles.

Abstract: Diamond SPM and AFM probes which are durable, particularly for scanning hard surfaces such as diamond surfaces. Interlayers and seeding can be used to improve diamond deposition, and the diamond can be ultrananocrystalline diamond (UNCD). Tip sharpening improves resolution.

Abstract: A method of depositing nanocrystalline diamond film on a substrate at a rate of not less than about 0.2 microns/hour at a substrate temperature less than about 500° C. The method includes seeding the substrate surface with nanocrystalline diamond powder to an areal density of not less than about 1010sites/cm2, and contacting the seeded substrate surface with a gas of about 99% by volume of an inert gas other than helium and about 1% by volume of methane or hydrogen and one or more of acetylene, fullerene and anthracene in the presence of a microwave induced plasma while maintaining the substrate temperature less than about 500° C. to deposit nanocrystalline diamond on the seeded substrate surface at a rate not less than about 0.2 microns/hour. Coatings of nanocrystalline diamond with average particle diameters of less than about 20 nanometers can be deposited with thermal budgets of 500° C.-4 hours or less onto a variety of substrates such as MEMS devices.

Abstract: Diamond SPM and AFM probes which are durable, particularly for scanning hard surfaces such as diamond surfaces. Interlayers and seeding can be used to improve diamond deposition, and the diamond can be ultrananocrystalline diamond (UNCD). Tip sharpening improves resolution.

Abstract: Diamond material made by a hot filament chemical vapor deposition process, providing large film area, good growth rate, phase purity, small average grain size, smooth surfaces, and other useful properties. Low substrate temperatures can be used. Control of process variables such as pressure and filament temperature and reactant ratio allow control of the diamond properties. Applications include MEMS, wear resistance low friction coatings, biosensors, and electronics.

Abstract: A monolithically integrated 3-D membrane or diaphragm/tip (called 3-D tip) of substantially all UNCD having a tip with a radius of about less than 50 nm capable of measuring forces in all three dimensions or being used as single tips or in large arrays for imprint of data on memory media, fabrication of nanodots of different materials on different substrates and many other uses such as nanolithography production of nanodots of biomaterials on substrates, etc. A method of molding UNCD is disclosed including providing a substrate with a predetermined pattern and depositing an oxide layer prior to depositing a carbide-forming metallic seed layer, followed by seeding with diamond nano or micropowder in solvent suspension, or mechanically polishing with diamond powder, or any other seeding method, followed by UNCD film growth conforming to the predetermined pattern.

Abstract: An ultrananocrystalline diamond (UNCD) having an average grain size between 3 and 5 nanometers (nm) with not more than about 8% by volume diamond having an average grain size larger than 10 nm. A method of manufacturing UNCD film is also disclosed in which a vapor of acetylene and hydrogen in an inert gas other than He wherein the volume ratio of acetylene to hydrogen is greater than 0.35 and less than 0.85, with the balance being an inert gas, is subjected to a suitable amount of energy to fragment at least some of the acetylene to form a UNCD film having an average grain size of 3 to 5 nm with not more than about 8% by volume diamond having an average grain size larger than 10 nm.

Abstract: An electrically conducting n-type ultrananocrystalline diamond (UNCD) having no less than 1019 atoms/cm3 of nitrogen is disclosed. A method of making the n-doped UNCD. A method for predictably controlling the conductivity is also disclosed.