Patents by Inventor John A. Dodge

John A. Dodge has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for doping epitaxial layers using doped substrate material
    Patent number: 5861321
    Abstract: A method is provided for producing an n-type or p-type epitaxial layer using a doped substrate material. The method includes growing a substrate (12), preferably from a material to which an epitaxial layer can be lattice-matched. The substrate (12) is doped with a predetermined concentration of dopant (14). Preferably, the dopant (14) possesses the ability to rapidly diffuse through a material. An epitaxial layer (16) is grown upon the doped substrate (12). The epitaxial layer (16) and the doped substrate are annealed, thereby causing the dopant (14) to diffuse from the substrate (14) into the epitaxial layer (16).
    Type: Grant
    Filed: November 21, 1996
    Date of Patent: January 19, 1999
    Assignee: Texas Instruments Incorporated
    Inventors: John H. Tregilgas, Donald F. Weirauch, John A. Dodge, Sidney G. Parker