Abstract: A solar cell package and processes for creating a solar cell package are disclosed. The solar cell includes an electrically insulating and thermally conductive first layer, an electrically conductive second layer attached to the first layer, and a solar cell attached to the second layer. The first layer surface and a solar cell surface have substantially the same surface area.

Abstract: Methods and apparatus are provided for the chemical mechanical planarization (CMP) of a surface of a work piece. In accordance with one embodiment of the invention the apparatus comprises a plurality of CMP systems, a plurality of load cups for loading unprocessed work pieces into and unloading processed work pieces from the plurality of CMP systems, a plurality of cleaning stations for cleaning processed work pieces unloaded from the CMP systems, and a single robot configured to transfer unprocessed work pieces to the plurality of load cups and to transfer processed work pieces from the load cups to the plurality of cleaning stations.

Abstract: An integrated pressure control system for a workpiece carrier includes a multizone carrier workpiece having multiple pressurizable zones and a pressure control system mounted to the carrier for controlling pressure provided to the pressurizable zones. The present invention also includes a workpiece carrier having a housing, a workpiece bladder coupled to the housing, and at least one pressure transducer mounted to the carrier housing for controlling pressure provided to the workpiece bladder.

Abstract: A method for polishing the surface of a diamond film with a low power density plasma in a reactor which comprises disposing O.sub.2 gas and a fluorinated gas such as SF.sub.6, NF.sub.3, and C.sub.2 F.sub.6 in the reactor, providing power to the reactor so that the power density in the reactor is between about 1.0 watts/cm.sup.2 and about 1.1 watts/cm.sup.2 for a first duration, and maintaining temperature in the reactor at between about 200.degree. to about 400.degree.. The method may alternatively comprise disposing a sputter gas such as Ar,O.sub.2 or N.sub.2 in the reactor, providing power to the reactor so that the power density in the reactor is between about 3.0 watts/cm.sup.2 and about 7.5 watts/cm.sup.2 for a first duration, and performing a sputter etch, disposing O.sub.2 gas and a fluorinated gas such as SF.sub.6, NF.sub.3, and C.sub.2 F.sub.6 in the reactor, and providing power to the reactor so that the power density in the reactor is between about 1.5 watts/cm.sup.2 and about 3.0 watts/cm.sup.

Abstract: A method for growing a diamond film, substantially free of voids, having an average crystallite size greater than about 15 microns, a maximum intensity of the diamond Raman peak in counts/sec divided by the intensity of photoluminescence at 1270 cm.sup.-1 greater than about 3, a Raman sp.sup.3 full width half maximum less than about 6 cm.sup.-1, and a diamond-to-graphite Raman ratio greater than about 25, includes the steps of preparing a substrate by abrasion with diamond particles; placing the substrate in a CVD reactor; depositing diamond during a first deposition stage by providing an atmosphere consisting essentially of a mixture of about 200 sccm H.sub.2 and 10 sccm CH.sub.4, at a pressure of about 90 Torr, providing between about 1,800 and 1,950 watts of microwave power at a frequency of about 2.45 GHz to ignite and sustain a plasma in the region of said substrate, and maintaining the substrate at a temperature of between about 625.degree. C. and 675.degree. C.

Abstract: A carrier for a laser diode bar comprises a generally rectangularly shaped block formed from a dielectric material having a high thermal conductivity. The block includes a stepped recess formed therein having a height essentially equal to one half the height of a laser diode bar to be mounted thereon. An assembly for mounting a laser diode bar comprises a pair of carriers in contact with one another and oriented such that their stepped recesses are in facing relationship to one another. A laser diode bar is positioned between the carriers in the space left by their combined stepped recesses. A plurality of assemblies may be placed in contact with or separated from one another.

Abstract: The present invention comprises an article formed from a plurality of non-diamond particles compatible with diamond deposition preformed into a desired shape. Each of the particles has first surface regions in contact with immediately adjacent other ones of the particles, and second surface regions spaced apart from the immediately adjacent other ones of said particles to define boundaries of inter-particle voids between the immediately adjacent ones of the particles. The voids are infiltrated with high thermal conductivity CVD diamond material continuously coating the second surface regions of the particles and comprising merged growth fronts from the second surface regions of individual immediately adjacent ones of the particles into the inter-particle voids.

Abstract: A CVD diamond material, substantially free of voids, has an average crystallite size greater than about 15 microns, a maximum intensity of the diamond Raman peak in counts/sec divided by the intensity of photoluminescence at 1270 cm.sup.-1 greater than about 3, a Raman sp.sup.3 full width half maximum less than about 6 cm.sup.-1 and a diamond-to-graphite Raman ratio greater than about 25. The diamond material may also comprise carbon atoms with a C.sup.13 content less than 0.05 atomic %.

Abstract: A diamond film having an intensity ratio of diamond-Raman-peak-to-photoluminescence background intensity greater than about 20, a maximum intensity of the diamond Raman peak in counts/sec divided by the intensity of photoluminescence at 1270 cm greater than about 3, a Raman sp full width half maximum less than about 6 cm and a diamond-to-graphite Raman ratio greater than about 25. The diamond film has a thermal conductivity of at least 17 Wcm K.

Abstract: The present invention comprises an article formed for a plurality of diamond-coated fibers preformed into a desired shape. Each of the fibers has first surface regions in contact with immediately adjacent other ones of the fibers, and second surface regions spaced apart from the immediately adjacent other ones of said fibers to define boundaries of inter-fiber voids between the immediately adjacent ones of the fibers. The voids are infiltrated with high thermal conductivity CVD diamond material continuously coating the second surface regions of the fibers and comprising merged growth fronts from the second surface regions of individual immediately adjacent ones of the fibers into the inter-particle voids.

Abstract: A diamond coated article, wherein the diamond has a thermal conductivity of at least 17 Wcm K.

Abstract: Method for consolidating diamond material, substantially free of voids, has an average crystallite size greater than about 15 microns, a maximum intensity of the diamond Raman peak in counts/sec divided by the intensity of photoluminescence at 1270 cm.sup.-1 greater than about 3, a Raman sp.sup.3 full width half maximum less than about 6 cm.sup.-1 and a diamond-to-graphite Raman ratio greater than about 25. The diamond material may also comprise carbon atoms with a C.sup.13 content less than 0.05 atomic %.

Abstract: A two-stage microwave plasma CVD process is disclosed for making a CVD diamond material, substantially free of voids, which has an average crystallite size greater than about 15 microns, a maximum intensity of the diamond Raman peak in counts/sec divided by the intensity of photoluminescence at 1270 cm.sup.-1 greater than about 3, a Raman sp.sup.3 full width half maximum less than about 6 cm.sup.-1 and a diamond-to-graphite Raman ratio greater than about 25.

Abstract: The present invention comprises an article formed from a plurality of diamond particles and non-diamond particles compatible with diamond deposition preformed into a desired shape. Each of the particles has first surface regions in contact with immediately adjacent other ones of the particles, and second surface regions spaced apart from the immediately adjacent other ones of said particles to define boundaries of inter-particle voids between the immediately adjacent ones of the particles. The voids are infiltrated with high thermal conductivity CVD diamond material continuously coating the second surface regions of the particles and comprising merged growth fronts from the second surface regions of individual immediately adjacent ones of the particles into the inter-particle voids.