Abstract: A tunable filter includes a waveguide with at least one resonant cavity and a tunable impedance structure coupled to each resonant cavity. Each resonant cavity has a resonant frequency and its corresponding impedance structure can be tuned to adjust the resonant frequency. The filter transmits the signal in a pass-band that includes the resonant frequency and reflects signals outside the pass-band.

Abstract: A heterojunction bipolar transistor (HBT) is disclosed that includes successive emitter, base and collector and sub-collector epitaxial layers and emitter, base and collector contact metals contacting the emitter, base and sub-collector layers respectively. A passivation material is included that covers the uncovered portions of the layers and covers substantially all of the contact metals. The passivation material has a planar surface and a portion of each of the contact metals protrudes from the surface. Planar metals are included on the planar surface, each being isolated from the others and in electrical contact with a respective contact metal. A method for fabricating an HBT is also disclosed, wherein successive emitter, base, collector and sub-collector epitaxial layers are deposited on a substrate, with the substrate being adjacent to the sub-collector layer.

Abstract: A waveguide is disclosed that shifts the phase of the signal passing through it. In one embodiment, the waveguide has an impedance structure on its walls that resonates at a frequency lower than the frequency of the signal passing through the waveguide. This causes the structure to present a capacitive impedance to the signal, increasing its propagation constant and shifting its phase. Another embodiment of the new waveguide has impedance structures on its wall that are voltage controlled to change the frequency at which the impedance structures resonate. The range of frequencies at which the structure can resonate is below the frequency of the signal passing through the waveguide. This allows the waveguide cause a adjust the shift in the phase of its signal. An amplifier array can be included in the waveguides to amplify the signal. A module can be constructed of the new waveguides and placed in the path of a millimeter beam.

Abstract: The application, according to a desired image, of an absorbance controlling composition to a receiver having an imaging layer comprising a radiation absorbing component, such as a dye or pigment, with spectral absorbance properties susceptible to change on treatment with the absorbance controlling composition provides a method of imaging by which a desired image may be formed on the receiver, for example by jetting a solution of the absorbance controlling composition onto the receiver.

Abstract: A shutter switch is disclosed and placed in the path of a millimeter beam and is either opaque or transparent to the beam. The shutter switch comprises a number of waveguides placed adjacent to one another to intercept the beam, a portion of the beam passing through each waveguide. The dimensions of each waveguide are such that transmission of the respective portion of the beam would be cut-off if all of the waveguide walls were conductive. However, the waveguides have high impedance structures on at least two of their opposing interior walls that allow the beam at the design frequency to be transmitted through the waveguide with uniform density and minimal attenuation. At this design frequency the shutter switch is essentially transparent to the beam. Each of the high impedance structures can also be changed to a conductive surfaces such that all of the waveguide walls appear conductive and the waveguide takes on the characteristics of a metal rectangular waveguide.

Abstract: A tunable filter includes a waveguide with at least one resonant cavity and a tunable impedance structure coupled to each resonant cavity. Each resonant cavity has a resonant frequency and its corresponding impedance structure can be tuned to adjust the resonant frequency. The filter transmits the signal in a pass-band that includes the resonant frequency and reflects signals outside the pass-band.

Abstract: Test probe pads are located lateral to, and spaced from, the emitter, base or collector region of a bipolar transistor, preferably on separate pedestals, and connected to their respective transistor regions by air bridges. The probe pads, transistor contacts and air bridges are preferably formed as common metallizations. In the case of an HBT, a gap in the subcollector below the air bridges insulates the test transistor from capacitor loading by the probe pads. The test transistors can be used to characterize both themselves and functional circuit transistors fabricated with the same process on the same wafer by testing at an intermediate stage of manufacture, thus allowing wafers to be discarded without completing the manufacture if their transistors do not meet specifications.

Abstract: A heterojunction bipolar transistor (HBT) is disclosed that includes successive emitter, base and collector and sub-collector epitaxial layers and emitter, base and collector contact metals contacting the emitter, base and sub-collector layers respectively. A passivation material is included that covers the uncovered portions of the layers and covers substantially all of the contact metals. The passivation material has a planar surface and a portion of each of the contact metals protrudes from the surface. Planar metals are included on the planar surface, each being isolated from the others and in electrical contact with a respective contact metal. A method for fabricating an HBT is also disclosed, wherein successive emitter, base, collector and sub-collector epitaxial layers are deposited on a substrate, with the substrate being adjacent to the sub-collector layer.

Abstract: Computerized method and system for training service personnel to service selected equipment. The method allows to provide a database for storing respective training modules for training service personnel to service respective assemblies of selected equipment. The method further identifies the present qualifications of a service personnel available at the service site for servicing the assembly. The method also correlates the present qualifications of the service personnel to predefined qualifications needed to service that assembly to determine whether or not the present qualifications of the service personnel meet the predetermined requirements. In the even the predefined qualifications for servicing the assembly are unmet by the present qualifications of the service provider, the method identifies one or more needed training modules that upon completion by the service personnel would enable the service personnel to meet the predefined qualifications relative to that assembly.

Abstract: A filter includes a waveguide with at least one impedance structure with a resonant frequency. The impedance structure is positioned in the waveguide to reflect signals at the resonant frequency. The filter can be tunable by including variable capacitance devices in the impedance structure(s) so that the resonant frequency can be adjusted.

Abstract: Disclosed in this writing is an automated teller machine. The machine includes mechanisms for conducting a financial transaction as well as for providing game cards, prizes, prize money, game-card redemption receipts, and placing bets or wages as a form of internet gambling in association with the financial transaction.

Abstract: A multi layered high impedance structure presents a high impedance to multiple frequency signals, with a different frequency for each layer. Each layer comprises a dielectric substrate, and an array of radiating elements such as parallel conductive strips or conductive patches on the substrate's top surface, with a conductive layer on the bottom surface of the bottommost layer. The radiating elements of succeeding layers are vertically aligned with conductive vias extending through the substrates to connect the radiating elements to the ground plane. Each layer presents as a series of parallel resonant L-C circuits to an E field at a particular signal frequency, resulting in a high impedance surface at that frequency. The new structure can be used as the substrate for a microstrip patch antenna to provide an optimal electrical distance between the resonator and backplane at multiple frequencies.

Abstract: A customer interface system for use with a check processing system. The customer interface system has a check reader and a card issuing machine. The check reader receives a check code indicative of a check having value and transmits the check code to the check processing system for at least one of authorizing and guaranteeing payment of at least a portion of the value of the check. The card issuing machine is operatively associated with the check reader. The card issuing machine receives an authorization code representing at least one of the authorization and the guarantee from the check processing system and provides an outputted card having a value thereon.

Abstract: The present invention provides a planographic printing element suitable to receive and bond with a subsequently applied hydrophilic layer comprises a substrate layer, such as polyester film or paper, having coated thereon an adhesion layer, said adhesion layer comprising a polymer having a glass transition temperature of less than 15 C and containing functional groups such as hydroxyl, epoxy or glycidyl groups capable of reacting with the hydrophilic layer. The polymer may be a terpolymer of a hydroxyalkyl methacrylate, an alkyl acrylate and an aminoalkyl methacrylate. The polymer may be mixed with gelatin and the mixture applied to the substrate as a coating. The hydrophilic layer, which may comprise metal oxide particles, such as aluminium oxide and/or titanium dioxide particles in a sodium silicate binder, is subsequently applied as a coating to the adhesion layer.

Abstract: A bipolar junction transistor (BJT) requires the fabrication of a BJT structure and of a support post which is adjacent to, but physically and electrically isolated from, the BJT structure. The BJT structure includes a semi-insulating substrate, a subcollector, a collector, a base, and an emitter. Metal contacts are formed on the subcollector and emitter to provide collector and emitter terminals. Contact to the structure's base is accomplished with a metal contact which extends from the top of the support post to the edge of the base nearest the support post. The contact bridges the physical and electrical separation between the support post and the base and provides a base terminal for the device. The base contact need extend over the edge of the base by no more than the transfer length associated with the fabrication process. This results in the smaller base contact area over the collector than would otherwise be necessary, and a consequent reduction in base-collector capacitance.

Abstract: A personal wallet pill card comprising a card like configuration that provides transportation, easy access storage, and a method to protect the medication from harm while transported in a wallet. This is achieved by utilizing the top upper pocket section of a wallet; where there is the only open space, allowing the storage without making the wallet thicker or applying pressure to the oral medications.

Abstract: A BJT device configuration includes an emitter finger and via arrangement which reduces emitter finger width, and is particularly suitable for use with compound semiconductor-based devices. Each emitter finger includes a cross-shaped metal contact which provides an emitter contact; each contact comprises two perpendicular arms which intersect at a central area. A via through an interlevel dielectric layer provides access to the emitter contact; the via is square-shaped, centered over the center point of the central area, and oriented at a 45° angle to the arms. This allows the via size to be equal to or greater than the minimum process dimension, while allowing the width of the emitter finger to be as narrow as possible with the alignment tolerances still being met.

Abstract: A bipolar junction transistor (BJT) requires the fabrication of a BJT structure and of a support post which is adjacent to, but physically and electrically isolated from, the BJT structure. The BJT structure includes a semi-insulating substrate, a subcollector, a collector, a base, and an emitter. Metal contacts are formed on the subcollector and emitter to provide collector and emitter terminals. Contact to the structure's base is accomplished with a metal contact which extends from the top of the support post to the edge of the base nearest the support post. The contact bridges the physical and electrical separation between the support post and the base and provides a base terminal for the device. The base contact need extend over the edge of the base by no more than the transfer length associated with the fabrication process. This results in the smaller base contact area over the collector than would otherwise be necessary, and a consequent reduction in base-collector capacitance.

Abstract: A BJT device configuration includes an emitter finger and via arrangement which reduces emitter finger width, and is particularly suitable for use with compound semiconductor-based devices. Each emitter finger includes a cross-shaped metal contact which provides an emitter contact; each contact comprises two perpendicular arms which intersect at a central area. A via through an inter-level dielectric layer provides access to the emitter contact; the via is square-shaped, centered over the center point of the central area, and oriented at a 45° angle to the arms. This allows the via size to be equal to or greater than the minimum process dimension, while allowing the width of the emitter finger to be as narrow as possible with the alignment tolerances still being met.

Abstract: The present invention provides methods for the use of visible and/or near-infrared spectroscopic methodology to monitor and control processes for the generation of particles, including processes that provide for a reduction in particle size and processes that result in an increase in particle size. One embodiment of the present invention employs visible and/or near-infrared diffuse reflectance spectroscopy to monitor particle size. The present invention is particularly useful for monitoring particle size of optically dense samples and is further useful for monitoring the endpoint of particle generation processes. In contrast to methods known in the art, the present invention is especially useful for on-line monitoring of particle size.