Abstract: A plasma processing system having at least a plasma processing chamber for performing plasma processing of a substrate and utilizing at least a first processing state and a second processing state. Plasma is present above the center region of the substrate during the first processing stale to perform plasma processing of at least the center region during the first processing state. Plasma is absent above the center region of the substrate but present adjacent to the bevel edge region during the second processing state to at least perform plasma processing of the bevel edge region during the second processing state. During the second processing state, the upper electrode is in an RF floating state and the substrate is disposed on the lower electrode surface.

Abstract: The disclosed technology includes switching between a normal or standard-lens UI and a panoramic or wide-angle photography UI responsive to a zoom gesture. In one implementation, a user gesture corresponding to a “zoom-out” command, when received at a mobile computing device associated with a minimum zoom state, may trigger a switch from a standard lens photo capture UI to a wide-angle photography UI. In another implementation, a user gesture corresponding to a “zoom-in” command, when received at a mobile computing device associated with a nominal wide-angle state, may trigger a switch from a wide-angle photography UI to a standard lens photo capture UI.

Abstract: A method of uniformly processing an upper surface of a semiconductor substrate in a plasma processing apparatus including a showerhead including gas outlets in discrete sectors of a process exposed surface thereof comprises processing the upper surface of the semiconductor substrate by flowing gas through a first discrete sector of the showerhead while preventing gas from flowing through an adjacent discrete sector of the showerhead, and processing the upper surface of the semiconductor substrate by flowing gas through a second discrete sector of the showerhead while preventing gas from flowing through an adjacent discrete sector of the showerhead. The flow of gas through the first discrete sector and the second discrete sector of the showerhead is time averaged such that the upper surface of the semiconductor substrate is uniformly processed.

Abstract: A substrate support assembly comprises a ceramic puck having a substrate receiving surface and an opposing backside surface. The ceramic puck has an electrode and a heater embedded therein. The heater comprises first and second coils that are radially spaced apart. A base of the support assembly comprises a channel to circulate fluid therethrough, the channel comprising an inlet and terminus that are adjacent to one another so that the channel loops back upon itself. A compliant layer bonds the ceramic puck to the base.

Abstract: A substrate processing chamber comprises an electrostatic chuck comprising a ceramic puck having a substrate receiving surface and an opposing backside surface. In one version, the ceramic puck comprises a thickness of less than 7 mm. An electrode is embedded in the ceramic puck to generate an electrostatic force to hold a substrate, and heater coils in the ceramic puck allow independent control of temperatures at different heating zones of the puck. A chiller provides coolant to coolant channels in a base below the ceramic puck. A controller comprises temperature control instruction sets which set the coolant temperature in the chiller in relation prior to ramping up or down of the power levels applied to the heater.

Abstract: The disclosed technology includes switching between a normal or standard-lens UI and a panoramic or wide-angle photography UI responsive to a zoom gesture. In one implementation, a user gesture corresponding to a “zoom-out” command, when received at a mobile computing device associated with a minimum zoom state, may trigger a switch from a standard lens photo capture UI to a wide-angle photography UI. In another implementation, a user gesture corresponding to a “zoom-in” command, when received at a mobile computing device associated with a nominal wide-angle state, may trigger a switch from a wide-angle photography UI to a standard lens photo capture UI.

Abstract: A plasma processing system having at least a plasma processing chamber for performing plasma processing of a substrate and utilizing at least a first processing state and a second processing state. Plasma is present above the center region of the substrate during the first processing stale to perform plasma processing of at least the center region during the first processing state. Plasma is absent above the center region of the substrate but present adjacent to the bevel edge region during the second processing state to at least perform plasma processing of the bevel edge region during the second processing state. During the second processing state, the upper electrode is in an RF floating state and the substrate is disposed on the lower electrode surface.

Abstract: A system for providing an environment in which one or more performers are able to generate one or more corresponding performances which are mutually synchronized is provided. The system includes a server arrangement coupled via one or more communication networks to one or more computing devices of the performers. A given computing device is operable to receive one or more pre-recorded sessions from the server arrangement. The given computing device is then operable to replay the pre-recorded sessions whilst substantially temporally simultaneously recording an accompanying performance by at least one performer associated with the given computing device. Further, the system is operable to render at least one pre-recorded session and the accompanying performance mutually synchronized therewith.

Abstract: A semiconductor substrate support for use in a plasma processing apparatus comprises a chuck body having a plenum and three radially extending bores extending between the plenum and an outer periphery of the chuck body, wherein the chuck body is sized to support a semiconductor substrate having a diameter of at least 450 mm. The semiconductor substrate support further comprises three tubular support arms which include a first section extending radially outward from the outer periphery of the chuck body, and a second section extending vertically from the first section. The tubular support arms provide a passage therethrough which communicates with a respective bore in the chuck body. The second section of each tubular support arm is configured to engage with a respective actuation mechanism outside the chamber operable to effect vertical translation and planarization of the chuck body in the interior of a plasma processing chamber.

Abstract: An electrostatic chuck for receiving a substrate in a substrate processing chamber comprises a ceramic puck having a substrate receiving surface having a plurality of spaced apart mesas, an opposing backside surface, and central and peripheral portions. A plurality of heat transfer gas conduits traverse the ceramic puck and terminate in ports on the substrate receiving surface to provide heat transfer gas to the substrate receiving surface. An electrode is embedded in the ceramic puck to generate an electrostatic force to retain a substrate placed on the substrate receiving surface. A plurality of heater coils are also embedded in the ceramic puck, the heaters being radially spaced apart and concentric to one another.

Abstract: A fire suppression system for producing an inert gas mixture having a minimal amount of carbon monoxide, particulates, or smoke. The inert gas mixture may be generated by combusting a gas generant. The gas generant may be a composition that includes hexa(ammine)-cobalt(III)-nitrate. The fire suppression system also includes a heat management system to reduce a temperature of the inert gas mixture. A method of extinguishing fires is also disclosed.

Abstract: A semiconductor substrate support for use in a plasma processing apparatus comprises a chuck body having a plenum and three radially extending bores extending between the plenum and an outer periphery of the chuck body, wherein the chuck body is sized to support a semiconductor substrate having a diameter of at least 450 mm. The semiconductor substrate support further comprises three tubular support arms which include a first section extending radially outward from the outer periphery of the chuck body, and a second section extending vertically from the first section. The tubular support arms provide a passage therethrough which communicates with a respective bore in the chuck body. The second section of each tubular support aim is configured to engage with a respective actuation mechanism outside the chamber operable to effect vertical translation and planarization of the chuck body in the interior of a plasma processing chamber.

Abstract: A universal bracket system can be used to create multiple interlocking bracket assemblies for construction of buildings, dwellings, structures and other objects. A primary planar bracket plate member has flange extensions and holes for bolts or other fasteners. Multiple supplementary bracket plate members are variations of the primary bracket plate member. A ridge bracket plate member is provided. Primary and supplementary plate members, as well as the ridge bracket plate member, can be combined in multiple interlocking configurations to create brackets for connecting structural members into many different connection joints.

Abstract: Methods and apparatus for controlling plasma in a plasma processing system having at least an inductively coupled plasma (ICP) processing chamber are disclosed. The ICP chamber employs at least a first/center RF coil, a second/edge RF coil disposed concentrically with respect to the first/center RF coil, and a RF coil set having at least a third/mid RF coil disposed concentrically with respect to the first/center RF coil and the second/edge RF coil in a manner such that the third/mid RF coil is disposed in between the first/center RF coil and the second/edge RF coil. During processing, RF currents in the same direction are provided to the first/center RF coil and the second/edge RF coil while RF current in the reverse direction (relative to the direction of the currents provided to the first/center RF coil and the second/edge RF coil) is provided to the third/mid RF coil.

Abstract: In one embodiment, a plasma processing device may include a dielectric window, a vacuum chamber, an energy source, and at least one air amplifier. The dielectric window may include a plasma exposed surface and an air exposed surface. The vacuum chamber and the plasma exposed surface of the dielectric window can cooperate to enclose a plasma processing gas. The energy source can transmit electromagnetic energy through the dielectric window and form an elevated temperature region in the dielectric window. The at least one air amplifier can be in fluid communication with the dielectric window. The at least one air amplifier can operate at a back pressure of at least about 1 in-H2O and can provide at least about 30 cfm of air.

Abstract: A method including enabling user selection of an image for display as a root screen of a menu system; enabling user definition of a first area in the image that becomes a first actuation-sensitive area of the root screen of the menu system when the image is displayed as the root screen of the menu system; enabling user definition of an association between the first area in the image and a user selected first asset, wherein the association provides for the automatic use of the associated first asset when the first actuation-sensitive area of the root screen of the menu system is actuated while the image is displayed as the root screen of the menu system.

Abstract: An electrostatic chuck for receiving a substrate in a substrate processing chamber comprises a ceramic puck having a substrate receiving surface having a plurality of spaced apart mesas, an opposing backside surface, and central and peripheral portions. A plurality of heat transfer gas conduits traverse the ceramic puck and terminate in ports on the substrate receiving surface to provide heat transfer gas to the substrate receiving surface. An electrode is embedded in the ceramic puck to generate an electrostatic force to retain a substrate placed on the substrate receiving surface. A plurality of heater coils are also embedded in the ceramic puck, the heaters being radially spaced apart and concentric to one another.

Abstract: An electrostatic chuck for receiving a substrate in a substrate processing chamber comprises a ceramic puck having a substrate receiving surface and an opposing backside surface with a plurality of spaced apart mesas. An electrode is embedded in the ceramic puck to generate an electrostatic force to hold a substrate. Heater coils located at peripheral and central portions of the ceramic puck allow independent control of temperatures of the central and peripheral portions of the ceramic puck. The chuck is supported by a base having a groove with retained air. The chuck and base can also have an overlying edge ring and clamp ring.

Abstract: A pedestal assembly and method for controlling temperature of a substrate during processing is provided. In one embodiment, the pedestal assembly includes an electrostatic chuck coupled to a metallic base. The electrostatic chuck includes at least one chucking electrode and metallic base includes at least two fluidly isolated conduit loops disposed therein. In another embodiment, the pedestal assembly includes a support member that is coupled to a base by a material layer. The material layer has at least two regions having different coefficients of thermal conductivity. In another embodiment, the support member is an electrostatic chuck. In further embodiments, a pedestal assembly has channels formed between the base and support member for providing cooling gas in proximity to the material layer to further control heat transfer between the support member and the base, thereby controlling the temperature profile of a substrate disposed on the support member.

Abstract: A dual frequency matching circuit for plasma enhanced semiconductor processing chambers having dual frequency cathodes is provided. The matching circuit includes two matching circuits with variable shunts combined to a common output. The matching circuit balances the load of the independent RF sources to that of the plasma in the processing chamber during operation.