Abstract: A RF transistor stack is described. The RF transistor stack comprises a first transistor having a T-gate layout configuration. The first transistor has a body region; a plurality of drain regions; and a plurality of source regions. A second transistor is provided which has a T-gate layout configuration. The second transistor has a body region; a plurality of drain regions; and a plurality of source regions. An interconnect operably couples the source regions of the first transistor with the source regions of the second transistor such that the distortion due to asymmetry in the division of RF voltage between the drain to source and the source to body terminals of first transistor is cancelled by reversing the asymmetry in the division of the RF voltage in the second transistor.

Abstract: A radio frequency (RF) switch which comprises an RF domain section having a plurality of RF switching elements. A DC domain section is provided having circuitry configured for controlling the RF switching elements in response to one or more control signals. A resistive load is provided between the RF domain section and the DC domain section. A bypass circuit is configured for selectively bypassing at least a portion of the resistive load.

Abstract: A radio frequency (RF) circuit is described that comprises a plurality of switching arms selectively activatable and associated with corresponding RF input ports. A switch source impedance is associated with each of the RF input ports. The switch source impedance is frequency dependent with its value matched to a characteristic impedance value within a first frequency range. The value of the switch source impedance is not matched to the characteristic impedance value within a second frequency range. When an RF signal within the first frequency range is transmitted through the RF circuit, between one of the RF input ports and an a common port, an RF distortion voltage within a distortion frequency range results at the common port; and the amplitude of a resultant RF distortion voltage is lower than an RF distortion voltage if the switched source impedance is matched to the characteristic impedance within the second frequency range.

Abstract: An electronic device is described. The electronic device comprises a voltage generator including a charge pump configured to provide an output voltage. A comparator is configured to generate a control signal based on comparing a value indicative of an output voltage with a reference voltage. A clock is operable to selectively provide a clock signal to the charge pump. A level shifter is configured to receive the output voltage from the charge pump and to perform level shifting. A semiconductor-on-insulator radio frequency (RF) switch is configured to receive a signal from the level shifter. One or more ESD discharge paths are associated with the level shifter.

Abstract: A Radio Frequency (RF) switch element is described. The RF switch element comprises a primary transistor element for facilitating switching an RF signal between circuit nodes. A pair of secondary transistor elements are also provided. The pair of secondary transistor elements are co-operable with the primary transistor element and provide respective signal paths which have a lower impedance level than an intrinsic element associated with the primary transistor element.

Abstract: An RF switch with inter-domain ESD protection. The RF switch comprises an RF domain section having a plurality of RF switching elements; and a DC domain section having circuitry configured for driving the RF switching elements. At least one primary ESD protection element is operably coupled between the RF domain section and DC domain section.

Abstract: A radio frequency (RF) circuit is described that comprises a plurality of switching arms selectively activatable and associated with corresponding RF input ports. A switch source impedance is associated with each of the RF input ports. The switch source impedance is frequency dependent with its value matched to a characteristic impedance value within a first frequency range. The value of the switch source impedance is not matched to the characteristic impedance value within a second frequency range. When an RF signal within the first frequency range is transmitted through the RF circuit, between one of the RF input ports and an a common port, an RF distortion voltage within a distortion frequency range results at the common port; and the amplitude of a resultant RF distortion voltage is lower than an RF distortion voltage if the switched source impedance is matched to the characteristic impedance within the second frequency range.

Abstract: A RF transistor stack is described. The RF transistor stack comprises a first transistor having a T-gate layout configuration. The first transistor has a body region; a plurality of drain regions; and a plurality of source regions. A second transistor is provided which has a T-gate layout configuration. The second transistor has a body region; a plurality of drain regions; and a plurality of source regions. An interconnect operably couples the source regions of the first transistor with the source regions of the second transistor such that the distortion due to asymmetry in the division of RF voltage between the drain to source and the source to body terminals of first transistor is cancelled by reversing the asymmetry in the division of the RF voltage in the second transistor.

Abstract: A radio frequency (RF) switch which comprises an RF domain section having a plurality of RF switching elements. A DC domain section is provided having circuitry configured for controlling the RF switching elements in response to one or more control signals. A resistive load is provided between the RF domain section and the DC domain section. A bypass circuit is configured for selectively bypassing at least a portion of the resistive load.

Abstract: A Radio Frequency (RF) switch element is described. The RF switch element comprises a primary transistor element for facilitating switching an RF signal between circuit nodes. A pair of secondary transistor elements are also provided. The pair of secondary transistor elements are co-operable with the primary transistor element and provide respective signal paths which have a lower impedance level than an intrinsic element associated with the primary transistor element.

Abstract: A radio frequency (RF) switch which comprises an RF domain section having a plurality of RF switching elements. A DC domain section is provided having circuitry configured for controlling the RF switching elements in response to one or more control signals. A resistive load is provided between the RF domain section and the DC domain section. A bypass circuit is configured for selectively bypassing at least a portion of the resistive load.

Abstract: A radio frequency (RF) switch which comprises an RF domain section having a plurality of RF switching elements. A DC domain section is provided having circuitry configured for controlling the RF switching elements in response to one or more control signals. A resistive load is provided between the RF domain section and the DC domain section. A bypass circuit is configured for selectively bypassing at least a portion of the resistive load.

Abstract: A method for customizing, based on medical imaging data for a patient positioned on a treatment couch, a medical immobilization device is disclosed. Medical imaging data, for example, CT image data, MRI image data or the like, is received, and a selection is made of an immobilization device that anchors only to at least one boney structure of a body part of the patient to immobilize the body part of the patient. The immobilization device may mask only partially the body part of the patient. The device can be customized and an image of the patient can be repositioned without obtaining additional imaging data from the patient. The at least one boney structure may be an orbital area and a chin, an elbow, or a knee and groin area. The immobilization device may be attachable to a support structure positioned underneath the patient on the treatment couch.

Abstract: An RF switch with inter-domain ESD protection. The RF switch comprises an RF domain section having a plurality of RF switching elements; and a DC domain section having circuitry configured for driving the RF switching elements. At least one primary ESD protection element is operably coupled between the RF domain section and DC domain section.

Abstract: Various embodiments of systems, methods, and computer programs are disclosed for managing multiple conferences via a conference user interface. One such method comprises: a conferencing system establishing a current conference, via a communication network, between a host and a first set of participants, the current audio conference having a first scheduled timeslot; during the current conference, the conferencing system: receiving, via the communication network, a request from one or more of a second set of participants to join a next conference between the host and the second set of participants, the next audio conference having a second scheduled timeslot; establishing the next conference between the second set of participants; and notifying the host that the second set of participants have joined the next conference; the conferencing system terminating the current conference; and in response to terminating the current conference, the conferencing system automatically adding the host to the next conference.

Abstract: A method of optimising a sequential combinatorial process comprising an interchangeable sequence of events uses a master model to model a selection of the possible sequences. Information derived from the master model is used in a surrogate model that approximates the master model. The surrogate model calculates all possible sequences using an algorithm to select information calculated by the master model that most closely matches the events of a present sequence, following a prioritised system so that the best match is used wherever possible. All results from the surrogate model are compared to identify the modelled sequence that gives results closest to a desired optimum result.

Abstract: A device is provided for transferring printed sheet material products including a gripper conveyor having a plurality of grippers for gripping a plurality of printed sheet material products, a sheet conveyor for receiving the plurality of products from the plurality of grippers in a lapped stream, and a plurality of fingers, each finger assigned to one of the plurality of grippers, each finger contacting a first side of one of the plurality of products when a second side of the plurality of products is in contact with the sheet conveyor. A method is also provided.