Abstract: The present invention relates to an apparatus and method for polishing substrate surfaces. The method can include the steps of holding a substrate against a polishing surface and depositing slurry on the polishing surface. The method can further include the step of moving the holding device in a substantially curvilinear path relative to the polishing surface, or the step of moving the polishing surface in a substantially curvilinear path relative to the holding device. The apparatus comprises a polishing surface, a holding device for holding a substrate against the polishing surface, and a slurry supply system for depositing slurry on the polishing surface. The apparatus further includes a moving structure for moving the holding device in a substantially curvilinear path along the polishing surface, or a moving structure for moving the polishing surface in a substantially curvilinear path relative to the holding device. The substantially curvilinear path is preferably substantially a figure eight path.

Abstract: A slurry container includes an outer surface and a cavity within the outer surface. Slurry is deposited in the cavity of the container and subsequently used for a variety of different purposes. Air pockets occurring within the cavity of the container are reduced in order to regulate particle size of the slurry.

Abstract: An apparatus for the electrochemical mechanical planarization of semiconductor wafers includes a rotatable platen and a polishing pad disposed on the platen. The polishing pad has top and bottom surfaces. A wafer carrier is disposed proximate to the platen for pressing a semiconductor wafer against the platen. At least one carrier electrode is disposed on the carrier and is adapted to electrically connect an electrically conducting surface of the semiconductor wafer to an electrolytic circuit including a potential source. A platen electrode is operatively connected to the platen. The platen electrode electrically connects an electrolytic solution disposed on the polishing pad to the potential source and to the electrode on the wafer carrier to complete the electrolytic circuit. The platen electrode has a substantially circular circumference for discharging electrons into the electrolytic solution. The platen electrode is substantially devoid of portions under the bottom surface of the polishing pad.

Abstract: An apparatus and method for removing a polishing pad from a platen during a CMP process is disclosed. The invention facilitates the removal of a polishing pad from a platen by providing a polishing pad having at least one protuberance portion extending from the main portion of the pad such that the polishing pad may be removed manually or with the assistance of a device by engaging the protuberance portion.

Abstract: A technique for reducing corrosion over a steel platen used during semiconductor wafer polishing. An anodic metal plate is attached to the steel platen to cathodically protect the surface of the steel platen via an electrochemical process. This cathodic protection inhibits the formation of localized anodic sections formed on the steel platen. Since the steel platen now has fewer, if any, localized anodic sections present in the prior art, the steel platen is less likely to corrode. The anodic metal may be made of an inexpensive metal material such as magnesium, aluminum, or some other appropriate metal. The metal plate is also replaceable in nature, i.e., it may be replaced after the metal plate has been corroded.