Abstract: Ionic liquids having melting points below about 100 C formed by reaction of a heterocyclic amine with about 2.8 and about 3.2 moles of anhydrous hydrogen fluoride per mole of amine nitrogen. Electrochemical devices having non-aqueous electrolytes containing the ionic liquids are also disclosed, as well as silicon oxide etching compositions containing the ionic liquids and etching methods in which silicon oxides are selectively removed by the etching compositions in the presence of aluminum.

Abstract: Post-contact opening etchants for post-etch cleans and methods for fabricating such etchants are provided. In an exemplary embodiment, a post-contact opening etchant comprises anhydrous hydrogen fluoride and a fluoride-dissociation modulating agent. In another embodiment, a method for fabricating a post-contact opening etchant comprises providing anhydrous hydrogen fluoride, combining the anhydrous hydrogen fluoride and a fluoride-dissociation modulating agent, and mixing the anhydrous hydrogen fluoride and the fluoride-dissociation modulating agent to form a homogeneous mixture.

Abstract: Silicon oxide etching solutions containing the product of at least one bifluoride source compound dissolved in a solvent consisting of at least one carboxylic acid, and further comprising from about 0.5 to about 3 percent by solution weight of hydrofluoric acid and from about 1 to about 5 percent by solution weight of water, wherein the total concentration of bifluoride source compound is between about 1.25 and about 5.0 moles per kilogram of solvent. Methods for selectively removing silicon oxides and metal silicates from metal surfaces are also disclosed.

Abstract: Silicon oxide etching solutions containing the product of at least one bifluoride source compound dissolved in a solvent consisting of at least one carboxylic acid, and further comprising from about 0.5 to about 3 percent by solution weight of hydrofluoric acid and from about 1 to about 5 percent by solution weight of water, wherein the total concentration of bifluoride source compound is between about 1.25 and about 5.0 moles per kilogram of solvent. Methods for selectively removing silicon oxides and metal silicates from metal surfaces are also disclosed.

Abstract: Acid etching mixtures having water content, reduced by the addition of fluorosulfonic acid. The preparation and the use of said acid etching mixtures, particularly in etching silicon, are also disclosed.

Abstract: A radiation-sensitive composition comprising an admixture in a solvent of: at least one alkali-soluble binder resin, at least one photoactive compound and an effective sensitivity enhancing amount of at least one polylactide compound; the amount of said binder resin being about 60 to 95% by weight, the amount of said photoactive component being about 5% to about 40% by weight, based on the total solids content of said radiation-sensitive composition.