Abstract: A method of fabricating external contacts in an integrated circuit structure utilizes chemical mechanical polishing (CMP). The structure includes an active device substrate region defined by field oxides. First and second diffusions formed in the active region define a substrate surface region therebetween. In accordance with the method, a layer of amorphous or polycrystalline silicon is formed in contact with the diffusion regions, subjected to a chemical mechanical polishing (CMP) step and then etched to form external contacts. The process flow can be applied to CMOS technologies and adapted to bipolar technologies to provide a BiCMOS flow.

Abstract: The process for forming a layer of metal silicide over polysilicon structures, such as gates and interconnect lines, is simplified by forming a layer of insulation material over the polysilicon structures, removing the layer of insulation material until the layer of insulation material is substantially planar and the thickness of the insulation material over the polysilicon structures is within a predetermined thickness range, etching the planarized layer of insulation material until portions of the polysilicon structures are exposed, depositing a layer of metal over the resulting structure, and then reacting the metal layer with the polysilicon structures to form the layer of metal silicide.

Abstract: A new Star Shot Wave Tumbler System for polishing objects such as jewelry or coins with a simple water, soap and scrubbing tumbler shot solution in a short period of time with a quality polish. The inventive device includes a circular tumbler drum to retain the objects being polished, a stability means preventing undue vibration of the circular tumbler drum, a tumbler rotation means rotating the circular tumbler drum, at least one scrubbing tumbler shot for every two jewelry pieces or every two charms or any combination of two thereof, to polish the object and a wave tumbler member to agitate the objects during polishing.