Patents by Inventor John A. Pipitone

John A. Pipitone has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9017533
    Abstract: In a physical vapor deposition plasma reactor, a multi-frequency impedance controller is coupled between RF ground and one of (a) the bias electrode, (b) the sputter target, the controller providing adjustable impedances at a first set of frequencies, said first set of frequencies including a first set of frequencies to be blocked and a first set of frequencies to be admitted. The first multi-frequency impedance controller includes a set of band pass filters connected in parallel and tuned to said first set of frequencies to be admitted, and a set of notch filters connected in series and tuned to said first set of frequencies to be blocked.
    Type: Grant
    Filed: July 15, 2008
    Date of Patent: April 28, 2015
    Assignee: Applied Materials, Inc.
    Inventors: John C. Forster, Daniel J. Hoffman, John A. Pipitone, Xianmin Tang, Rongjun Wang
  • Patent number: 8920611
    Abstract: The method of performing physical vapor deposition on a workpiece includes performing at least one of the following: (a) increasing ion density over a workpiece center while decreasing ion density over a workpiece edge by decreasing impedance to ground at a target source power frequency fs through a bias multi-frequency impedance controller relative to the impedance to ground at the source power frequency fs through the side wall; or (b) decreasing ion density over the workpiece center while increasing ion density over the workpiece edge by increasing the impedance to ground at fs through the bias multi-frequency impedance controller relative to the impedance to ground at fs through the side wall.
    Type: Grant
    Filed: July 15, 2008
    Date of Patent: December 30, 2014
    Assignee: Applied Materials, Inc.
    Inventors: John C. Forster, Daniel J. Hoffman, John A. Pipitone, Xianming Tang, Rongjun Wang
  • Publication number: 20130192629
    Abstract: A substrate cleaning chamber includes a contoured ceiling electrode having an arcuate surface that faces a substrate support and has a variable cross-sectional thickness to vary the gap size between the arcuate surface and the substrate support to provide a varying plasma density across the substrate support. A dielectric ring for the cleaning chamber comprises a base, a ridge, and a radially inward ledge that covers the peripheral lip of the substrate support. A base shield comprises a circular disc having at least one perimeter wall. Cleaning and conditioning processes for the cleaning chamber are also described.
    Type: Application
    Filed: January 11, 2013
    Publication date: August 1, 2013
    Inventors: Vineet Mehta, Karl M. BROWN, John A. Pipitone, Daniel J. Hoffman, Steven C. Shannon, Keith A. Miller, Vijay D. PARKHE
  • Patent number: 8491759
    Abstract: Embodiments of the disclosure may provide a matching network for physical vapor deposition. The matching network may include a first RF generator coupled to a deposition chamber target through a first impedance matching network having a first tuning circuit. The first RF generator may be configured to introduce a first AC signal to the deposition chamber target. The matching network may also include a second RF generator coupled to a deposition chamber pedestal through a second impedance matching network. The second RF generator may be configured to introduce a second AC signal to the deposition chamber pedestal. The first tuning circuit may be configured to modify an effect of the second AC signal on plasma formed between the deposition chamber target and the deposition chamber pedestal.
    Type: Grant
    Filed: October 20, 2010
    Date of Patent: July 23, 2013
    Assignee: COMET Technologies USA, Inc.
    Inventors: John A. Pipitone, Gerald E. Boston
  • Patent number: 8435379
    Abstract: A substrate cleaning chamber includes a contoured ceiling electrode having an arcuate surface that faces a substrate support and has a variable cross-sectional thickness to vary the gap size between the arcuate surface and the substrate support to provide a varying plasma density across the substrate support. A dielectric ring for the cleaning chamber comprises a base, a ridge, and a radially inward ledge that covers the peripheral lip of the substrate support. A base shield comprises a circular disc having at least one perimeter wall. Cleaning and conditioning processes for the cleaning chamber are also described.
    Type: Grant
    Filed: May 8, 2007
    Date of Patent: May 7, 2013
    Assignee: Applied Materials, Inc.
    Inventors: Vineet Mehta, Karl Brown, John A. Pipitone, Daniel J. Hoffman, Steven C. Shannon, Keith A. Miller, Vijay D. Parkhe
  • Publication number: 20120097524
    Abstract: Embodiments of the disclosure may provide a matching network for physical vapor deposition. The matching network may include a first RF generator coupled to a deposition chamber target through a first impedance matching network having a first tuning circuit. The first RF generator may be configured to introduce a first AC signal to the deposition chamber target. The matching network may also include a second RF generator coupled to a deposition chamber pedestal through a second impedance matching network. The second RF generator may be configured to introduce a second AC signal to the deposition chamber pedestal. The first tuning circuit may be configured to modify an effect of the second AC signal on plasma formed between the deposition chamber target and the deposition chamber pedestal.
    Type: Application
    Filed: October 20, 2010
    Publication date: April 26, 2012
    Applicant: COMET TECHNOLOGIES USA, INC.
    Inventors: John A. Pipitone, Gerald E. Boston
  • Publication number: 20120097104
    Abstract: Embodiments of the disclosure may provide a matching network for a physical vapor deposition system. The matching network may include an RF generator coupled to a first input of an impedance matching network, and a DC generator coupled a second input of the impedance matching network. The impedance matching network may be configured to receive an RF signal from the RF generator and a DC signal from the DC generator and cooperatively communicate both signals to a deposition chamber target through an output of the impedance matching network. The matching network may also include a filter disposed between the second input and the output of the impedance matching network.
    Type: Application
    Filed: October 20, 2010
    Publication date: April 26, 2012
    Applicant: COMET TECHNOLOGIES USA, INC.
    Inventors: John A. Pipitone, Gerald E. Boston
  • Patent number: 8123969
    Abstract: A method of fabricating multilayer interconnect structures on a semiconductor wafer uses an interior surface of a metal lid that has been roughed to a surface roughness in excess of RA 2000 with a reentrant surface profile. The metal lid is installed as the ceiling of a plasma clean reactor chamber having a wafer pedestal facing the interior surface of the ceiling.
    Type: Grant
    Filed: April 9, 2009
    Date of Patent: February 28, 2012
    Assignee: Applied Materials, Inc.
    Inventors: Karl M. Brown, John A. Pipitone, Vineet H. Mehta
  • Publication number: 20100314244
    Abstract: Methods of processing a substrate in a PVD chamber comprising a target, a substrate and a process gas at a pressure sufficient to cause ionization of a substantial portion of species sputtered from the target are described. A capacitively coupled high density plasma is maintained by applying very high frequency power to the target. Sputtered material is ionized in the plasma and accelerated toward the substrate by a high frequency bias power applied to the substrate. The microstructure of the resultant film is controlled by modifying one or more of the pressure and the high frequency bias power.
    Type: Application
    Filed: September 16, 2009
    Publication date: December 16, 2010
    Applicant: Applied Materials, Inc.
    Inventors: Karl Brown, Alan Ritchie, John A. Pipitone, Daniel J. Hoffman, Ying Rui, Donald J.K. Olgado
  • Publication number: 20100314245
    Abstract: Methods of processing a substrate in a PVD chamber comprising a target, a substrate and a process gas at a pressure sufficient to cause ionization of a substantial portion of species sputtered from the target are described. A capacitively coupled high density plasma is maintained by applying very high frequency power to the target. Sputtered material is ionized in the plasma and accelerated toward the substrate by a high frequency bias power applied to the substrate. The microstructure of the resultant film is controlled by modifying one or more of the pressure and the high frequency bias power.
    Type: Application
    Filed: June 12, 2009
    Publication date: December 16, 2010
    Applicant: Applied Materials, Inc.
    Inventors: Karl Brown, Alan Ritchie, John A. Pipitone, Daniel J. Hoffman, Ying Rui, Donald J.K. Olgado
  • Patent number: 7804040
    Abstract: A physical vapor deposition reactor includes a vacuum chamber with a sidewall, a ceiling and a retractable wafer support pedestal near a floor of the chamber, and a vacuum pump coupled to the chamber, the retractable wafer support pedestal having an internal electrode and a grounded base with a conductive annular flange extending from the base. A metal sputter target at the ceiling is energized by a high voltage D.C. source. The reactor has an RF plasma source power generator with a frequency suitable for exciting kinetic electrons is coupled to either the sputter target or to the internal electrode of the pedestal.
    Type: Grant
    Filed: May 22, 2006
    Date of Patent: September 28, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Karl M. Brown, Semyon Sherstinksy, Vineet H. Mehta, Wei W. Wang, John A. Pipitone, Kurt J. Ahmann, Armando Valverde, Jr.
  • Patent number: 7780814
    Abstract: A plasma reactor for processing a workpiece in a reactor chamber having a wafer support pedestal within the chamber and process gas injection apparatus, an RF bias power generator coupled to the wafer support pedestal and having a bias frequency, a source power applicator, an RF source power generator having a source frequency and a coaxial cable coupled between the RF source power generator and the source power applicator includes a filter connected between the coaxial cable and the source power applicator that enhances uniformity of etch rate across the wafer and from reactor to reactor. The filter includes a set of reflection circuits coupled between the source power applicator and a ground potential and being tuned to, respectively, the bias frequency and intermodulation products of the bias frequency and the source frequency.
    Type: Grant
    Filed: July 8, 2005
    Date of Patent: August 24, 2010
    Assignee: Applied Materials, Inc.
    Inventors: John A. Pipitone, Kenneth D. Smyth, Mei Po (Mabel) Yeung
  • Publication number: 20100089748
    Abstract: The present invention generally includes a sputtering target assembly that may be used in an RF sputtering process. The sputtering target assembly may include a backing plate and a sputtering target. The backing plate may be shaped to have one or more fins that extend from the backing plate towards the sputtering target. The sputtering target may be bonded to the fins of the backing plate. The RF current utilized during a sputtering process will be applied to the sputtering target at the one or more fin locations. The fins may extend from the backing plate at a location that corresponds to a magnetic field produced by a magnetron that may be disposed behind the backing plate. By controlling the location where the RF current is coupled to the sputtering target to be aligned with the magnetic field, the erosion of the sputtering target may be controlled.
    Type: Application
    Filed: October 15, 2008
    Publication date: April 15, 2010
    Inventors: JOHN C.FORSTER, Daniel J. Hoffman, John A. Pipitone, Xianmin Tang, RongJun Wang
  • Publication number: 20100012480
    Abstract: The method of performing physical vapor deposition on a workpiece includes performing at least one of the following: (a) increasing ion density over a workpiece center while decreasing ion density over a workpiece edge by decreasing impedance to ground at a target source power frequency fs through a bias multi-frequency impedance controller relative to the impedance to ground at the source power frequency fs through the side wall; or (b) decreasing ion density over the workpiece center while increasing ion density over the workpiece edge by increasing the impedance to ground at fs through the bias multi-frequency impedance controller relative to the impedance to ground at fs through the side wall.
    Type: Application
    Filed: July 15, 2008
    Publication date: January 21, 2010
    Applicant: Applied Materials, Inc.
    Inventors: John C. Forster, Daniel J. Hoffman, John A. Pipitone, Xianming Tang, Rongjun Wang
  • Publication number: 20100012029
    Abstract: In a physical vapor deposition plasma reactor, a multi-frequency impedance controller is coupled between RF ground and one of (a) the bias electrode, (b) the sputter target, the controller providing adjustable impedances at a first set of frequencies, said first set of frequencies including a first set of frequencies to be blocked and a first set of frequencies to be admitted. The first multi-frequency impedance controller includes a set of band pass filters connected in parallel and tuned to said first set of frequencies to be admitted, and a set of notch filters connected in series and tuned to said first set of frequencies to be blocked.
    Type: Application
    Filed: July 15, 2008
    Publication date: January 21, 2010
    Applicant: Applied Materials, Inc.
    Inventors: John C. FORSTER, Daniel J. Hoffman, John A. Pipitone, Xianmin Tang, Rongjun Wang
  • Publication number: 20090197419
    Abstract: A method of fabricating multilayer interconnect structures on a semiconductor wafer uses an interior surface of a metal lid that has been roughed to a surface roughness in excess of RA 2000 with a reentrant surface profile. The metal lid is installed as the ceiling of a plasma clean reactor chamber having a wafer pedestal facing the interior surface of the ceiling.
    Type: Application
    Filed: April 9, 2009
    Publication date: August 6, 2009
    Inventors: KARL M. BROWN, John A. Pipitone, Vineet H. Mehta
  • Patent number: 7541289
    Abstract: A method of fabricating multilayer interconnect structures on a semiconductor wafer begins by roughening the interior surface of a metal lid to a surface roughness in excess of SA 2000 with a reentrant surface profile, and installing the metal lid as the ceiling of a plasma clean reactor chamber having a wafer pedestal facing the interior surface of the ceiling.
    Type: Grant
    Filed: January 23, 2007
    Date of Patent: June 2, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Karl M. Brown, John A. Pipitone, Vineet H. Mehta
  • Publication number: 20080276958
    Abstract: A substrate cleaning chamber includes a contoured ceiling electrode having an arcuate surface that faces a substrate support and has a variable cross-sectional thickness to vary the gap size between the arcuate surface and the substrate support to provide a varying plasma density across the substrate support. A dielectric ring for the cleaning chamber comprises a base, a ridge, and a radially inward ledge that covers the peripheral lip of the substrate support. A base shield comprises a circular disc having at least one perimeter wall. Cleaning and conditioning processes for the cleaning chamber are also described.
    Type: Application
    Filed: May 8, 2007
    Publication date: November 13, 2008
    Inventors: Vineet Mehta, Karl Brown, John A. Pipitone, Daniel J. Hoffman, Steven C. Shannon, Keith A. Miller, Vijay D. Parkhe