Abstract: Structures operable to detect radiation are described. The structure may two screens with a phosphor layer, respective. The structure may further include a photosensor array disposed between the first screen and the second screen such that the photosensor array directly contacts the first screen or is directly attached to the first screen using an optical adhesive and directly contacts the second screen or is directly attached to the second screen using an optical adhesive.

Abstract: Structures operable to detect radiation are described. The structure may two screens with a phosphor layer, respective. The structure may further include a photosensor array disposed between the first screen and the second screen such that the photosensor array directly contacts the first screen or is directly attached to the first screen using an optical adhesive and directly contacts the second screen or is directly attached to the second screen using an optical adhesive.

Abstract: Structures operable to detect radiation are described. The structure may two screens with a phosphor layer, respective. The structure may further include a photosensor array disposed between the first screen and the second screen such that the photosensor array directly contacts the first screen or is directly attached to the first screen using an optical adhesive and directly contacts the second screen or is directly attached to the second screen using an optical adhesive.

Abstract: Structures operable to detect radiation are described. The structure may two screens with a phosphor layer, respective. The structure may further include a photosensor array disposed between the first screen and the second screen such that the photosensor array directly contacts the first screen or is directly attached to the first screen using an optical adhesive and directly contacts the second screen or is directly attached to the second screen using an optical adhesive.

Abstract: Provided is a detector that includes a scintillator, a common electrode, a pixel electrode, and a plurality of insulating layers, with a plurality of nano-pillars formed in the plurality of insulating layers, a nano-scale well structure between adjacent nano-pillars, with a-Se separating the adjacent nano-pillars, and a method for operation thereof.

Abstract: Provided is a detector that includes a scintillator, a common electrode, a pixel electrode, and a plurality of insulating layers, with a plurality of nano-pillars formed in the plurality of insulating layers, a nano-scale well structure between adjacent nano-pillars, with a-Se separating the adjacent nano-pillars, and a method for operation thereof.

Abstract: Provided is a detector that includes a scintillator, a common electrode, a pixel electrode, and a plurality of insulating layers, with a plurality of nano-pillars formed in the plurality of insulating layers, a nano-scale well structure between adjacent nano-pillars, with a-Se separating the adjacent nano-pillars, and a method for operation thereof.

Abstract: A photodetector/imaging device comprises a layer of photoconductive material converting incident electromagnetic radiation into electrical charges, the layer of photoconductive material being capable of avalanche multiplication when an electric field of sufficient magnitude is applied thereacross; a readout layer detecting the electrical charge; and at least one interface layer between the layer of photoconductive material and the readout layer, the interface layer coupling electrical charge to or from the layer of photoconductive material and being configured to inhibit uncontrolled rises in current in the photoconductive material during avalanche multiplication.

Abstract: A photodetector/imaging device comprises a layer of photoconductive material converting incident electromagnetic radiation into electrical charges, the layer of photoconductive material being capable of avalanche multiplication when an electric field of sufficient magnitude is applied thereacross; a readout layer detecting the electrical charge; and at least one interface layer between the layer of photoconductive material and the readout layer, the interface layer coupling electrical charge to or from the layer of photoconductive material and being configured to inhibit uncontrolled rises in current in the photoconductive material during avalanche multiplication.

Abstract: The present invention is an indirect AMFPI wherein a phosphor such as a structured cesium iodide (CsI) is used to convert x-ray energy to optical photons or a charge, which is then detected by a two-dimensional array of either thin-film transistors (TFTs) such as an amorphous a-Se TFTs or a photodiode array. A scanning control circuit generates pulses to turn on the TFTs one row at a time, and thus the charge in the individual arrays is transferred from the TFT to one or more external charge-sensitive amplifiers. The charge-sensitive amplifiers are shared by all the pixels in the same column. The two-dimensional array can be read in real time.

Abstract: The present invention provides a practical design of a megavoltage x-ray detector with both high quantum efficiency (QE) and high resolution. The x-ray detector includes an optical-fiber taper (OFT) made from a large number of optical fibers, each of which is aligned with the incident x-rays from an x-ray source hitting a top surface of the optical fiber taper. The optical-fiber taper is a matrix of optical fibers with the core material made of, e.g., silica and coated with a cladding glass or polymer such that light created within the core of each optical fiber will be guided to the bottom ends of the fiber with the ends of the fibers at the bottom being optically coupled to and optical image read-out device. Each optical fiber in the optical fiber taper is fully aligned with the incident x-ray source so that x-rays entering the top of the fiber travel directly towards the bottom of the same fiber.

Abstract: An x-ray image intensifier includes a photoconductive x-ray detector having an electro-optic light modulator disposed on a photoconductive detector layer. The photoconductive x-ray detector absorbs x-rays passing through an object to be imaged to form an x-ray exposure of the object. An optical image of the x-ray exposure is generated when light passes through the photoconductive x-ray detector. An imager captures optical images of the x-ray exposures. A processor coupled to the imager digitizes and stores the optical images of the x-ray exposure captured by the imager at selected intervals.

Abstract: An x-ray image intensifier includes a photoconductive x-ray detector having an electro-optic light modulator disposed on a photoconductive detector layer. The photoconductive x-ray detector absorbs x-rays passing through an object to be imaged to form an x-ray exposure of the object. An optical image of the x-ray exposure is generated when light passes through the photoconductive x-ray detector. An imager captures optical images of the x-ray exposure. A processor coupled to the imager digitizes and stores the optical images of the x-ray exposure captured by the imager at selected intervals.

Abstract: A system for measuring the charge distribution on a photoreceptor plate which has been exposed to X-ray radiations to form an image of an object thereon is disclosed. The system comprises a transparent sensor electrode adapted to be positioned over the photoreceptor plate, means for scanning a pulsed laser beam through the transparent sensor electrode to discharge the photoreceptor surface charge pixel-by-pixel and so induce a corresponding voltage on the sensor electrode to be read by a suitable read-out device, such sensor electrode being of sufficient width so as to achieve good capacitive coupling with the region around the area to be discharged by the laser, and means for moving the sensor electrode or the photoreceptor plate step by step or continuously transversely of the laser scanning direction for reading out the image impressed on the photoreceptor surface.