Abstract: A device for regulating a flow of electric current and its manufacturing method are provided. The device includes metal-insulator-semiconductor source-drain contacts forming Schottky barrier or Schottky-like junctions to the semiconductor substrate. The device includes an interfacial layer between the semiconductor substrate and a metal source and/or drain electrode, thereby dynamically adjusting a Schottky barrier height by applying different bias conditions. The dynamic Schottky barrier modulation provides increased electric current for low drain bias conditions, reducing the sub-linear turn-on characteristic of Schottky barrier MOSFET devices and improving device performance.

Abstract: The invention is directed to a device for regulating the flow of electric current with high dielectric constant gate insulating layer and a source and/or drain forming a Schottky contact or Schottky-like region with a substrate and its fabrication method. In one aspect, the gate insulating layer has a dielectric constant greater than the dielectric constant of silicon. In another aspect, the current regulating device may be a MOSFET device, optionally a planar P-type or N-type MOSFET, having any orientation. In another aspect, the source and/or drain may consist partially or fully of a silicide.

Abstract: Large mesh deformation using the volumetric graph Laplacian is described. In one aspect, information is received from a user, wherein the information indicates how an original mesh is to be deformed. The original mesh is then deformed based on the information and application of a volumetric differential operator to a volumetric graph generated from the original mesh.

Abstract: A MOSFET device and method of fabricating is provided. The MOSFET device and method of fabricating utilizes Schottky barrier contacts for source and/or drain contact fabrication within the context of a MOSFET device structure to eliminate the requirement for halo/pocket implants and shallow source/drain extensions to control short channel effects. Additionally, the MOSFET device and method unconditionally eliminates the parasitic bipolar gain associated with MOSFET fabrication, reduces manufacturing costs, tightens control of device performance parameters, and provides for superior device characteristics.

Abstract: A Schottky barrier integrated circuit is disclosed, the circuit having at least one PMOS device or at least one NMOS device, at least one of the PMOS device or NMOS device having metal source-drain contacts forming Schottky barrier or Schottky-like contacts to the semiconductor substrate. The device provides a lower capacitance between source and gate, which improves device and circuit power and speed performance.

Abstract: Failover processing that accommodates failures of backup computing nodes and resources, such as data storage units and printers. Failure of a computing node that controls resources causes another computing node to assume control of the resources controlled by the failed node. Failure of the primary computing node causes another computing node, at either the same or at a different site, to be selected as the new primary node. Failure of a resource at the primary site causes the site with the next highest priority backup resource to become the new primary site. Failure of a backup computing node causes a new backup node at the same site as the failed backup node to replace the failed backup node as host for the site's resources. Backup mirroring data flows are then adjusted to reflect the new functions of the affected nodes.

Abstract: Computer graphics image rendering techniques render images using a precomputed radiance transfer (PRT) to model local effects such as bumps, wrinkles, or other detailed features on an arbitrarily deformable model's surface. The techniques apply zonal harmonics (ZH) which approximate spherical functions as sums of circularly symmetric functions around different axes. By spatially varying both the axes and coefficients of these basis functions, approximations can fit to spatially varying transfer signals. Compared to the spherical harmonic (SH) basis, the ZH basis yields a more compact approximation, and can be rotated at a low computational expense suitable for dense per-vertex or per-pixel evaluation. This allows PRT to be mapped onto deforming models which re-orient the local coordinate frame.

Abstract: The systems and methods for deploying VoIP telecommunication services. The systems include at least one service package that has a set of instructions for carrying out, hosting and/or deploying a VoIP telecommunications service. The system also includes a runtime environment, or process, that is capable of processing instructions stored in the one or more service packages for the purpose of carrying out the VoIP service deployment. The system further includes one or more adapters, each of which is capable of interfacing the system to the external network environment through which the communication service will be deployed. Optionally and preferably the system may also include an integrated development environment for allowing a user to develop a service package which can be executed within the runtime environment for directing the external network, through the adapters, to implement the user developed service.

Abstract: The invention is directed to a device for regulating the flow of electric current with high dielectric constant gate insulating layer and a source and/or drain forming a Schottky contact or Schottky-like region with a substrate and its fabrication method. In one aspect, the gate insulating layer has a dielectric constant greater than the dielectric constant of silicon. In another aspect, the current regulating device may be a MOSFET device, optionally a planar P-type or N-type MOSFET, having any orientation. In another aspect, the source and/or drain may consist partially or fully of a silicide.

Abstract: A CMOS device and method of fabrication are disclosed. The present invention utilizes Schottky barrier contacts for source and/or drain contact fabrication within the context of a CMOS device and CMOS integrated circuits, to eliminate the requirement for halo/pocket implants, shallow source/drain extensions to control short channel effects, well implant steps, and complex device isolation steps. Additionally, the present invention eliminates the parasitic bipolar gain associated with CMOS device operation, reduces manufacturing costs, tightens control of device performance parameters, and provides for superior device characteristics as compared to the prior art. The present invention, in one embodiment, uses a silicide exclusion mask process to form the dual silicide Schottky barrier source and/or drain contact for the complimentary PMOS and NMOS devices forming the CMOS device.

Abstract: A method of performing stretch-driven mesh parameterization. A method of performing stretch-driven mesh parameterization comprising, computing a spectral analysis to parameterize a mesh, and iterating a stretch optimization calculation to further optimize the initial parameterization.

Abstract: Systems and methods are provided for providing a fine-to-coarse look ahead in connection with parametrization in a graphics system. The use of a variety of parametrization metrics may be supplemented and improved by the fine-to-coarse look ahead techniques of the invention. First, the metric of a parametrization is minimized using a coarse-to-fine hierarchical solver, and then accelerated with a fine-to-coarse propagation. The resulting parametrizations have increased texture resolution in surface regions with greater signal detail at all levels of detail in the progressive mesh sequence.

Abstract: Systems and methods are provided for optimizing a parametrization scheme in accordance with information about the surface signal. A surface parametrization is created to store a given surface signal into a texture image. The signal-specialized metric of the invention minimizes signal approximation error, i.e., the difference between the original surface signal and its reconstruction from the sampled texture. A signal-stretch parametrization metric is derived based on a Taylor expansion of signal error. For fast evaluation, the metric of the invention is pre-integrated over the surface as a metric tensor. The resulting parametrizations have increased texture resolution in surface regions with greater signal detail. Compared to traditional geometric parametrizations, the number of texture samples can often be reduced by a significant factor for a desired signal accuracy.

Abstract: A waveguide device is provided comprising an optical waveguide core and a cladding optically coupled to the optical waveguide core. The cladding comprises an optically functional region defining a refractive index that is configured to vary in response to a control signal applied to the optically functional region. The refractive index of the optically functional region is lower than the refractive index of the optical waveguide core. In accordance with one embodiment of the present invention, the optically functional region may be characterized as a Kerr Effect medium.

Abstract: A text to XML transformer has a transformer program having a number of executable statements. A processor executes the transformer program and converts the input text document into an XML document. The XML document may not contain every element that was in the input text.

Abstract: Techniques and tools for mesh processing are described. For example, a multi-chart geometry image represents arbitrary surfaces on object models. The multi-chart geometry image is created by resampling a surface onto a regular 2D grid, using a flexible atlas construction to map the surface piecewise onto charts of arbitrary shape. This added flexibility reduces parameterization distortion and thus provides greater geometric fidelity, particularly for shapes with long extremities, high genus, or disconnected components. As another example, zippering creates a watertight surface on reconstructed triangle meshes. The zippering unifies discrete paths of samples along chart boundaries to form the watertight mesh.

Abstract: A device for regulating a flow of electric current and its manufacturing method are provided. The device includes metal-insulator-semiconductor source-drain contacts forming Schottky barrier or Schottky-like junctions to the semiconductor substrate. The device includes an interfacial layer between the semiconductor substrate and a metal source and/or drain electrode, thereby dynamically adjusting a Schottky barrier height by applying different bias conditions. The dynamic Schottky barrier modulation provides increased electric current for low drain bias conditions, reducing the sub-linear turn-on characteristic of Schottky barrier MOSFET devices and improving device performance.

Abstract: Systems and methods for discontinuity edge overdraw are described. In one aspect, a polygonal mesh is rendered to produce a computer-generated image. The image exhibits aliasing at its discontinuity edges. The discontinuity edges are sorted prior to overdrawing. The discontinuity edges are overdrawn as anti-aliased lines to reduce the aliasing.

Abstract: A method of fabricating a transistor device for regulating the flow of electric current is provided wherein the device has Schottky-barrier metal source-drain contacts. The method, in one embodiment, utilizes an isotropic etch process prior to the formation of the metal source-drain contacts to provide better control of the Schottky-barrier junction location to a channel region. The improvements from the controllability of the placement of the Schottky-barrier junction enables additional drive current and optimizes device performance, thereby significantly improving manufacturability.

Abstract: The invention is directed to a device for regulating the flow of electric current with high dielectric constant gate insulating layer and a source and/or drain forming a Schottky contact or Schottky-like region with a substrate and its fabrication method. In one aspect, the gate insulating layer has a dielectric constant greater than the dielectric constant of silicon. In another aspect, the current regulating device may be a MOSFET device, optionally a planar P-type or N-type MOSFET, having any orientation. In another aspect, the source and/or drain may consist partially or fully of a silicide.