Abstract: The present invention provides novel compositions comprising benzodiazepine derivatives according to formula (I). Also provided are compositions comprising at least one hygroscopic excipient, in particular lactose and/or dextran.

Abstract: An optical signal transmission apparatus (1) for a rotating antenna comprising a plurality of optical modulators (6) arranged for receiving a respective plurality of analog RF signals (5) and for modulating a respective plurality of optical signals therewith to produce a plurality of modulated analog optical signals (8). A plurality of opto-electrical converters (14) each converts a respective modulated analog optical signal (13) into an analog electrical signal. The plurality of optical modulators (6) are rotationally coupled in optical communication with the plurality of opto-electrical converters (14) via an optical rotary joint (10) including a reversion prism.

Abstract: An optical signal transmission apparatus (1) for a rotating antenna comprising a plurality of optical modulators (6) arranged for receiving a respective plurality of analogue RF signals (5) and for modulating a respective plurality of optical signals therewith to produce a plurality of modulated analogue optical signals (8). A plurality of opto-electrical converters (14) each converts a respective modulated analogue optical signal (13) into an analogue electrical signal. The plurality of optical modulators (6) are rotationally coupled in optical communication with the plurality of opto-electrical converters (14) via an optical rotary joint (10) including a reversion prism.

Abstract: A composition is provided with a benzodiazepine and at least one hygroscopic excipient, in particular lactose and/or dextran.

Abstract: Disclosed is a semiconductor structure that incorporates a capacitor for reducing the soft error rate of a device within the structure. The multi-layer semiconductor structure includes an insulator-filled deep trench isolation structure that is formed through an active silicon layer, a first insulator layer, and a first bulk layer and extends to a second insulator layer. The resulting isolated portion of the first bulk layer defines the first capacitor plate. A portion of the second insulator layer that is adjacent the first capacitor plate functions as the capacitor dielectric. Either the silicon substrate or a portion of a second bulk layer that is isolated by a third insulator layer and another deep trench isolation structure can function as the second capacitor plate. A first capacitor contact couples, either directly or via a wire array, the first capacitor plate to a circuit node of the device in order to increase the critical charge, Qcrit, of the circuit node.

Abstract: Apparatus for disinfecting fluid, the apparatus including a preheat heat exchanger (4) and a disinfection tank (5). The preheat exchanger heats the fluid to a first temperature and includes a first inlet for receiving the fluid (2), a first outlet for supplying preheated fluid at the first temperature, a second inlet for receiving disinfected fluid substantially at a second temperature and a second outlet for supplying the disinfected fluid (3). The disinfection tank heats the fluid to a second temperature and includes a heat source (10), an inlet for receiving the preheated fluid, a heat exchanger coupled to the inlet for heating the preheated fluid to a second temperature to thereby disinfect the fluid (11) and, an outlet coupled to the heat exchanger for providing the disinfected fluid to the second inlet of the preheat heat exchanger.

Abstract: A method for neutralizing trapped charges in a buried oxide layer. The method includes providing a semiconductor structure which includes (a) a semiconductor layer, (b) a charge accumulation layer on top of the semiconductor layer, and (c) a doped region in direct physical contact with the semiconductor layer, wherein the charge accumulation layer comprises trapped charges of a first sign, and wherein the doped region and the semiconductor layer form a P-N junction diode. Next, free charges are generated in the P-N junction diode, wherein the free charges are of a second sign opposite to the first sign. Next, the free charges are accelerated towards the charge accumulation layer, resulting in some of the free charges entering the charge accumulation layer and neutralizing some of the trapped charges in the charge accumulation layer.

Abstract: The present invention relates to a nonvolatile memory such as, for example a ROM or an EPROM, in which the information density of the memory is increased relative to a conventional nonvolatile memory that includes two logic state devices. Specifically, the nonvolatile memory of the present invention includes a SiN/TaN/SiN thin film resistor embedded within a material having a thermal conductivity of about 1 W/m-K or less; and a non-linear Si-containing device coupled to the resistor. Read and write circuits and operations are also provided in the present application.

Abstract: An on-chip, ultra-compact, and programmable semiconductor resistor device and device structure and a method of fabrication. Each semiconductor resistor device structure is formed of one or more conductively connected buried trench type resistor elements exhibiting a precise resistor value. At least two semiconductor resistor device structures may be connected in series or in parallel configuration through the intermediary of one or more fuse devices that may be blown to achieve a desired total resistance value.

Abstract: Disclosed is a semiconductor structure that incorporates a capacitor for reducing the soft error rate of a device within the structure. The multi-layer semiconductor structure includes an insulator-filled deep trench isolation structure that is formed through an active silicon layer, a first insulator layer, and a first bulk layer and extends to a second insulator layer. The resulting isolated portion of the first bulk layer defines the first capacitor plate. A portion of the second insulator layer that is adjacent the first capacitor plate functions as the capacitor dielectric. Either the silicon substrate or a portion of a second bulk layer that is isolated by a third insulator layer and another deep trench isolation structure can function as the second capacitor plate. A first capacitor contact couples, either directly or via a wire array, the first capacitor plate to a circuit node of the device in order to increase the critical charge, Qcrit, of the circuit node.

Abstract: A structure and associated method for annealing a trapped charge from a semiconductor device. The semiconductor structure comprises a substrate and a first heating element. The substrate comprises a bulk layer, an insulator layer and a device layer. The first heating element is formed within the bulk layer. A first side of the first heating element is adjacent to a first portion of the insulator layer. The first heating element is adapted to be selectively activated to generate thermal energy to heat the first portion of the insulator layer and anneal a trapped electrical charge from the first portion of the insulator layer.

Abstract: An on-chip, ultra-compact, and programmable semiconductor resistor device and device structure and a method of fabrication. Each semiconductor resistor device structure is formed of one or more conductively connected buried trench type resistor elements exhibiting a precise resistor value. At least two semiconductor resistor device structures may be connected in series or in parallel configuration through the intermediary of one or more fuse devices that may be blown to achieve a desired total resistance value.

Abstract: There is provided a method of contraception, comprising exposing a spermicidally sufficient quantity of an agent to spermatozoa. The agent is a quinone represented by the following formula: Each group A is H or an electron releasing moiety. The agent is capable of generating reactive oxygen species including free radicals, superoxide and hydrogen peroxide in the presence of spermatozoa.

Abstract: The use of CYB medium for the storage and/or transportation of semen at ambient temperature.

Abstract: A method of making yarn comprises feeding at least two drawn, continuous filament starting yarns (18, 19), of which at least one is a multifilament yarn, together to an intermingling device (21) to form a single bulked thread of which the filaments of the starting yarns are intermingled and looped, and applying a bulk-reducing treatment to the bulked thread (27), characterized in that the starting yarns are fed to the intermingling device with substantially equal overfeed.

Abstract: A method for making a thread comprising: feeding at least two drawn, continuous filament starting threads (18, 19), of which at least one is a multi-filament thread, together to an intermingling device (21) to form a single bulked thread of which the filaments of the starting threads are intermingled and looped, and applying a bulk-reducing treatment to the bulked thread characterized in that the bulk-reducing treatment comprises a treatment under tension without the thread being heated.

Abstract: There is disclosed a method for making a textile strand comprising passing two filamentous strands together through a jet device which commingles filaments of the two strands and then subjecting the thus commingled strands to a drawing step in which at least one of the strands is drawn to a stable drawn state.

Abstract: A through tubing stripgun detonating charge assembly for well perforating activities, comprising an elongate explosive resistant retrievable perforating charge support strip having a perforating charge interlocking track situate along the length thereof. A plurality of explosive well casing perforating charges having support elements thereon are connected in supporting and selective positioning interlocking engagement with the perforating charge interlocking track for support of certain ones of a plurality of perforating charges in 180 degree phase oriented and adjustably positionable relation on the perforating charge support strip. The perforating charge strip is also provided with a plurality of perforating charge connectors in spaced relation along the length thereof for support of a plurality of perforating charges in 0 degree phase relation with the perforating charge support strip and in 90 degree phase orientation with each of the 180 degree phased perforating charges.

Abstract: A method and apparatus for achieving adiabatic heat ignition of combustible material, particularly explosive compositions which involves entrapping a quantity of gas in a chamber which is in communication with the combustible material and suddenly compressing the gas to the extent that the temperature thereof is increased adiabatically to the ignition temperature of the combustible material. The apparatus is particularly adaptable for use as an adiabatic ignition device for detonating cord and shaped charges of perforating guns for completion of wells. A quantity of high explosive within an explosive barrel is in detonating proximity with the detonating cord. A cylinder forms an air chamber which is in communication with the explosive composition and is provided with a piston for compression of the gas. One or more shear pins or other locking devices are provided to secure the piston in immovable relation with the cylinder.

Abstract: Apparatus is provided for forming on a work piece a line of stitching substantially free from puckering by placing a stitch-engaging element of a width less than the length of a stitch to project across the line of stitching at the sewing position. The stitch-engaging element comprises a plurality of flexible filamentary elements arranged side by side in close juxtaposition and an endless row of stitching-engaging elements movable in a direction longitudinally of the row of stitch-engaging elements and positioned so that a portion of the row of stitching-engaging elements projects across the line of stitching at the sewing position. The flexible filamentary elements project radially from the periphery of a disc to form an endless row of stitch-engaging elements.