Abstract: The Button Slide is a fashion accessory that keeps buttons fastened and provides an additional style accent behind a button. The Button Slide has a flat-faced front and a flat-faced back, an aperture with one open end and a closed curved end, at least two sides, a top, and a bottom marking the opening channel to the aperture. The Button Slide sits on the attaching string of a button, usually between a garment with a fastened button and a garment's buttonhole. Because of its position and shape, the button is unable to accidentally slip through the buttonhole without first removing the Button Slide.

Abstract: The present invention is directed to a lead-frame having a stack of semiconductor dies with interposed metalized clip structure. Level projections extend from the clip structure to ensure that the clip structure remains level during fabrication.

Abstract: The present invention is directed to a lead-frame having a stack of semiconductor dies with interposed metalized clip structure. Level projections extend from the clip structure to ensure that the clip structure remains level during fabrication.

Abstract: The present invention is directed to a lead-frame having a stack of semiconductor dies with interposed metalized clip structure. Level projections extend from the clip structure to ensure that the clip structure remains level during fabrication.

Abstract: The present invention is directed to a lead-frame having a stack of semiconductor dies with interposed metalized clip structure. Level projections extend from the clip structure to ensure that the clip structure remains level during fabrication.

Abstract: A trench MOSFET transistor device and a method of making the same.

Abstract: A closed cell trench power MOSFET has a trench (54) running in first and second perpendicular directions through a body region (48) and extending into an epitaxial region (46). The trenches meet to form intersections (16). A polysilicon layer (58) is deposited in the trench. A photoresist pattern (60) is formed over the intersections to inhibit removal of the conductive material from the trench in and around the intersection areas. The process of inhibiting removal of the conductive material over the intersection areas of the trench prevents formation of a depression in the polysilicon in and around the intersection which would increase resistivity in the gate region. The goal of preventing formation of depressions in the polysilicon can also be achieved by making the polysilicon thicker on the intersections prior to the etching process and by making the trenches narrower in and around the intersections.

Abstract: An edible cup, drink and a wafer cover prepackaged for sacrament services. The edible cup may be made from carbohydrates and coated with an edible wax for containing a sacramental liquid, which may be wine, juice or distilled water. In use the communion wafer is removed and consumed with the liquid to satisfy the requirements of the sacrament. The cup may also be consumed to avoid waste.

Abstract: Transient voltage suppressor semiconductor devices and other semiconductor devices having rigorous requirements for the diffusion and depth of impurities to produce P-N junctions can be fabricated at surprisingly low costs without sacrifice of functional characteristics by subjecting the substrate to a grinding process resulting in a surface short of polishing perfection, thereby to eliminate the time-consuming and hence costly conventional polishing operation, and then diffusing the desired impurity into the substrate from a solid impurity source.

Abstract: A high voltage silicon rectifier includes a substrate portion and an epitaxial mesa portion that is a frustrum of a pyramid with a substantially square cross section and side walls that make a forty five degree angle with the substrate portion. The mesa portion includes three germanium doped layers that introduce strain to speed up recombination of charge carriers.

Abstract: Significant reduction in the cost of fabrication of shallow junction, Schottky or similar semiconductor devices without sacrifice of functional characteristics, while at the same time achieving the advantages is achieved, after the non-polishing cleaning step is essentially performed, by subjecting the substrate to conditions which move disadvantageous factors within said substrate into a space substantially at said surface, followed by substantially removing said factor-containing space from said substrate chemical removal step, followed etching and vapor deposition steps. Although these new steps add time, and therefore cost, to the overall process, the devices under discussion when produced by known industry processes require yet more time, and involve yet more expense, so that the total process represents a substantial reduction in the cost of their manufacture while producing devices which are the equivalent or superior in electrical performance to such devices which are made by known industry processes.

Abstract: A continuous molding machine particularly adapted for but not limited, in principle, to the making of waffles includes a lower conveyor carrying a plurality of forms each constituting a first part of a respective two-part split mold, a second conveyor carrying a plurality of forms each constituting the other part of the respective split molds and means for guiding the respective conveyors in respective paths so that the first and second mold parts are carried from spaced apart positions to positions in which the parts meet in registry and each of the molds defined by the parts is thereby closed and then the first and second mold parts are carried away from each other again so that each of the molds is opened. The conveyors carrying the mold parts may be passed through an oven to different extents so that the respective conveyors are heated differently and means are provided for aligning the mating mold parts despite different thermal expansions of the conveyors.