Patents by Inventor John ANKER
John ANKER has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240030369Abstract: A method for manufacturing a two terminal or three terminal tandem solar cell comprising a silicon-based bottom solar cell and a thin-film top solar cell; the method comprising: providing a silicon substrate with a front surface and a rear surface, carrying out a sequence of steps comprising: creating on the front surface a carrier extracting layer stack comprising at least a carrier extracting layer formed on or in the front surface of the substrate, creating on the rear surface a passivating coating layer comprising deposition of a first AlOx layer, creating sacrificial layer stack comprising a second AlOx layer on the carrier extracting layer stack on the front surface; creating metal-based electrical contacts on the rear surface, including an annealing step; removing the sacrificial layer stack from the carrier extracting layer stack, and creating the thin film top solar cell on the carrier extracting layer stack.Type: ApplicationFiled: February 25, 2022Publication date: January 25, 2024Applicant: Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNOInventors: John ANKER, Lambert Johan GEERLIGS
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Patent number: 11316054Abstract: Solar cell and method of manufacturing a solar cell. The solar cell has a silicon substrate (2) and a layer (4) disposed on a substrate side (2a) of the silicon substrate (2). It further has a contact structure (6) extending through the layer (4) from a cell side (1a) of the solar cell (1) to the silicon substrate (2). The layer (4) is composed of a polycrystalline silicon layer (8) and a tunnel oxide layer (10) interposed between the polycrystalline silicon layer (8) and the silicon substrate (2).Type: GrantFiled: August 3, 2017Date of Patent: April 26, 2022Assignee: Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNOInventors: John Anker, Evert Eugène Bende, Lambert Johan Geerligs, Maciej Krzyszto Stodolny
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Patent number: 11038069Abstract: A semiconductor substrate (1) having an active region (2) and a first surface and a second surface facing each other. A first type of passivating layer (5) is present for providing an electrical contact of a first conductivity type on a part of the first surface of the semiconductor substrate (1). A dielectric layer (4) is provided between the first type of passivating layer (5) and an active region (2) of the semiconductor substrate (1). Doping of the first conductivity type is provided in a layer (3) of the active region (2) of the semiconductor substrate (1) near the first surface. The lateral dopant level in the layer (3) of the active region (2) near the first surface is substantially uniform.Type: GrantFiled: November 24, 2017Date of Patent: June 15, 2021Assignee: Nederlandse Organisatie voor toegepast-natuurwetenschappeliik Onderzoek TNOInventors: Maciej Krzyszto Stodolny, Lambert Johan Geerligs, Evert Eugène Bende, John Anker
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Publication number: 20200287065Abstract: The present invention relates to a dopant enhanced silicon based solar cell and method of manufacturing thereof. The solar cell includes on a surface of the silicon substrate a layer stack including a thin oxide layer and a polysilicon layer, the thin oxide layer being arranged as a tunnel oxide layer in-between the surface of the substrate and the polysilicon layer. The solar cell is provided with fire-through metal contacts arranged on the layer stack locally penetrating into the polysilicon layer. The silicon substrate is provided at the side of the surface with a dopant species that creates a dopant profile of a first conductivity type in the silicon substrate. The dopant profile in the silicon substrate has a maximal dopant level between about 1×10+18 and about 3×10+19 atoms/cm3 and a depth of at least 200 nm within the substrate to a dopant atom level of 1×10+17 atoms/cm3.Type: ApplicationFiled: September 24, 2018Publication date: September 10, 2020Applicant: Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNOInventors: Maciej Krzyszto Stodolny, John Anker, Martien Koppes, Ingrid Gerdina Romijn, Lambert Johan Geerligs
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Publication number: 20200287066Abstract: A semiconductor substrate (1) having an active region (2) and a first surface and a second surface facing each other. A first type of passivating layer (5) is present for providing an electrical contact of a first conductivity type on a part of the first surface of the semiconductor substrate (1). A dielectric layer (4) is provided between the first type of passivating layer (5) and an active region (2) of the semiconductor substrate (1). Doping of the first conductivity type is provided in a layer (3) of the active region (2) of the semiconductor substrate (1) near the first surface. The lateral dopant level in the layer (3) of the active region (2) near the first surface is substantially uniform.Type: ApplicationFiled: November 24, 2017Publication date: September 10, 2020Applicant: Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNOInventors: Maciej Krzyszto Stodolny, Lambert Johan Geerligs, Evert Eugène Bende, John Anker
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Publication number: 20200279968Abstract: A back-contacted solar cell based on a silicon substrate of p-type conductivity has a front surface for receiving radiation and a rear surface. The rear surface is provided with a tunnel oxide layer and a doped polysilicon layer of n-type conductivity. The tunnel oxide layer and the patterned doped polysilicon layer of n-type conductivity form a patterned layer stack provided with gaps in the patterned layer stack. An Al—Si alloyed contact is arranged within each of the gaps, in electrical contact with a base layer of the substrate, and one or more Ag contacts are arranged on the patterned doped polysilicon layer and in electrical contact with the patterned doped polysilicon layer.Type: ApplicationFiled: September 20, 2018Publication date: September 3, 2020Applicant: Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNOInventors: Evert Eugène Bende, Yu Wu, John Anker
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Patent number: 10580922Abstract: Method of providing a boron doped region (8, 8a, 8b) in a silicon substrate (1), includes the steps of: (a) depositing a boron doping source (6) over a first surface (2) of the substrate (1); (b) annealing the substrate (1) for diffusing boron from the boron doping source (6) into the first surface (2), thereby yielding a boron doped region; (c) removing the boron doping source (6) from at least part of the first surface (2); (d) depositing undoped silicon oxide (10) over the first surface (2); and (e) annealing the substrate (1) for lowering a peak concentration of boron in the boron doped region (8, 8a) through boron absorption by the undoped silicon oxide. The silicon oxide (10) acts as a boron absorber to obtain the desired concentration of the boron doped region (8).Type: GrantFiled: January 9, 2014Date of Patent: March 3, 2020Assignee: NEDERLANDSE ORGANISATIE VOOR TOEGEPAST-NATUURWETENSCHAPPELIJK ONDERZOEK TNOInventors: Yuji Komatsu, John Anker, Paul Cornelis Barton, Ingrid Gerdina Romijn
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Publication number: 20190172957Abstract: Solar cell and method of manufacturing a solar cell. The solar cell has a silicon substrate (2) and a layer (4) disposed on a substrate side (2a) of the silicon substrate (2). It further has a contact structure (6) extending through the layer (4) from a cell side (1a) of the solar cell (1) to the silicon substrate (2). The layer (4) is composed of a polycrystalline silicon layer (8) and a tunnel oxide layer (10) interposed between the polycrystalline silicon layer (8) and the silicon substrate (2).Type: ApplicationFiled: August 3, 2017Publication date: June 6, 2019Applicant: Nederlandse Organisatie voor toegepast- natuurwetenschappelijk Onderzoek TNOInventors: John ANKER, Evert Eugene BENDE, Lambert Johan GEERLIGS, Maciej Krzyszto STODOLNY
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Publication number: 20160126394Abstract: A photovoltaic cell includes a semiconductor substrate of a first conductivity type, with a first surface arranged with a highly doped surface field layer of the first conductivity type. The substrate has on the highly doped surface field layer at least one contacting area for contacting the surface field layer with a respective contact. In the first surface at the location of the at least one contacting area a doping concentration in the highly doped surface field layer is increased relative to the doping concentration in the surface area outside the first contacting area, and in the first surface at the location of each contacting area the highly doped surface field layer has a profile depth that is larger than a profile depth of the doped surface field layer outside the contacting area.Type: ApplicationFiled: June 6, 2014Publication date: May 5, 2016Inventors: Ingrid Gerdina ROMIJN, John ANKER, Desislava Simeonova SAYNOVA, Antonius Radboud BURGERS, Martien KOPPES, Astrid GUTJAHR
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Publication number: 20150357499Abstract: Method of providing a boron doped region (8, 8a, 8b) in a silicon substrate (1), includes the steps of: (a) depositing a boron doping source (6) over a first surface (2) of the substrate (1); (b) annealing the substrate (1) for diffusing boron from the boron doping source (6) into the first surface (2), thereby yielding a boron doped region; (c) removing the boron doping source (6) from at least part of the first surface (2); (d) depositing undoped silicon oxide (10) over the first surface (2); and (e) annealing the substrate (1) for lowering a peak concentration of boron in the boron doped region (8, 8a) through boron absorption by the undoped silicon oxide. The silicon oxide (10) acts as a boron absorber to obtain the desired concentration of the boron doped region (8).Type: ApplicationFiled: January 9, 2014Publication date: December 10, 2015Inventors: Yuji KOMATSU, John ANKER, Paul Cornelis BARTON, Ingrid Gerdina ROMIJN