Patents by Inventor John Anthony Rodriguez
John Anthony Rodriguez has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11849590Abstract: In some examples, a system comprises a capacitor including a first plate, a second plate, and a ferroelectric material disposed between the first and the second plates and comprising a Bismuth Metal Oxide-Based Lead Titanate thin film. The capacitor further comprises a dielectric layer disposed on a transistor, wherein the capacitor is disposed on the dielectric layer.Type: GrantFiled: September 20, 2021Date of Patent: December 19, 2023Assignee: Texas Instruments IncorporatedInventors: Carl Sebastian Morandi, Susan Trolier-McKinstry, Kezhakkedath Ramunni Udayakumar, John Anthony Rodriguez, Bhaskar Srinivasan
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Publication number: 20220005814Abstract: In some examples, a system comprises a capacitor including a first plate, a second plate, and a ferroelectric material disposed between the first and the second plates and comprising a Bismuth Metal Oxide-Based Lead Titanate thin film. The capacitor further comprises a dielectric layer disposed on a transistor, wherein the capacitor is disposed on the dielectric layer.Type: ApplicationFiled: September 20, 2021Publication date: January 6, 2022Inventors: Carl Sebastian MORANDI, Susan TROLIER-McKINSTRY, Kezhakkedath Ramunni UDAYAKUMAR, John Anthony RODRIGUEZ, Bhaskar SRINIVASAN
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Patent number: 11158642Abstract: In some examples, a system comprises a capacitor including a first plate, a second plate, and a ferroelectric material disposed between the first and the second plates and comprising a Bismuth Metal Oxide-Based Lead Titanate thin film. The capacitor further comprises a dielectric layer disposed on a transistor, wherein the capacitor is disposed on the dielectric layer.Type: GrantFiled: February 9, 2018Date of Patent: October 26, 2021Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Carl Sebastian Morandi, Susan Trolier-McKinstry, Kezhakkedath Ramunni Udayakumar, John Anthony Rodriguez, Bhaskar Srinivasan
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Patent number: 10424361Abstract: A method of generating a random number from an electronic circuit memory and/or a system with the electronic circuit memory. The memory comprises a block of ferroelectric two transistor, two capacitor (2T-2C), memory cells. The method comprises: (i) first, writing a predetermined programming pattern to the block cells in a one transistor, one-capacitor (1T-1C) mode, thusly writing, per cell, a same data state to both a first and second sub-cell of the cell; (ii) second, reading the cells in a 2T-2C mode to generate a random number comprising a random bit from each of the cells; (iii) third, restoring the random number into the cells in a 2T-2C mode, thusly writing, per cell, a complementary data state to both a first and second sub-cell of the cell, responsive to a respective random number bit; and fourth, imprinting the random number in each cell in the block.Type: GrantFiled: April 30, 2018Date of Patent: September 24, 2019Assignee: Texas Instruments IncorporatedInventors: John Anthony Rodriguez, Richard Allen Bailey
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Publication number: 20190252016Abstract: A method of generating a random number from an electronic circuit memory and/or a system with the electronic circuit memory. The memory comprises a block of ferroelectric two transistor, two capacitor (2T-2C), memory cells. The method comprises: (i) first, writing a predetermined programming pattern to the block cells in a one transistor, one-capacitor (1T-1C) mode, thusly writing, per cell, a same data state to both a first and second sub-cell of the cell; (ii) second, reading the cells in a 2T-2C mode to generate a random number comprising a random bit from each of the cells; (iii) third, restoring the random number into the cells in a 2T-2C mode, thusly writing, per cell, a complementary data state to both a first and second sub-cell of the cell, responsive to a respective random number bit; and fourth, imprinting the random number in each cell in the block.Type: ApplicationFiled: April 30, 2018Publication date: August 15, 2019Inventors: John Anthony Rodriguez, Richard Allen Bailey
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Patent number: 10216484Abstract: A system on chip (SoC) may include a nonvolatile ferroelectric random access memory (FRAM). A random number may be created by applying operating power to the ferroelectric random access memory (FRAM) device and reading a sequence of virgin memory locations within the FRAM device to produce the random number sequence. The sequence of virgin memory locations had previously never been written. The random number may be produced during an initial boot of the SoC, for example. Alternatively, the random number may be saved by a test station during testing of the FRAM device after fabrication of the FRAM device. A memory test of the FRAM may then be performed, after which the random number may be stored in a defined location in the FRAM.Type: GrantFiled: June 10, 2014Date of Patent: February 26, 2019Assignee: Texas Instruments IncorporatedInventors: Eric Thierry Peeters, William Francis Kraus, Manuel Gilberto Aguilar, John Anthony Rodriguez
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Patent number: 10153053Abstract: A fuse-programmable register or memory location having a plurality of fusible links of differing electrical characteristics in parallel. In one embodiment, three fusible links with different resistances are provided, such that application of a programming voltage non-uniformly distributes the current among the links, allowing varying voltages to selectively blow one or more of the links. Sensing of the programmed state is performed by applying a voltage across the parallel links and measuring the current in comparison with a plurality of reference currents. Reduction in the overhead chip area per bit and in the serial data communication latency are obtained.Type: GrantFiled: October 19, 2017Date of Patent: December 11, 2018Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Sunil Kumar Dusa, Richard Allen Bailey, Archana Venugopal, John Anthony Rodriguez, Michael Allen Ball
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Publication number: 20180226418Abstract: In some examples, a system comprises a capacitor including a first plate, a second plate, and a ferroelectric material disposed between the first and the second plates and comprising a Bismuth Metal Oxide-Based Lead Titanate thin film. The capacitor further comprises a dielectric layer disposed on a transistor, wherein the capacitor is disposed on the dielectric layer.Type: ApplicationFiled: February 9, 2018Publication date: August 9, 2018Inventors: Carl Sebastian MORANDI, Susan TROLIER-McKINSTRY, Kezhakkedath Ramunni UDAYAKUMAR, John Anthony RODRIGUEZ, Bhaskar SRINIVASAN
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Publication number: 20180040381Abstract: A fuse-programmable register or memory location having a plurality of fusible links of differing electrical characteristics in parallel. In one embodiment, three fusible links with different resistances are provided, such that application of a programming voltage non-uniformly distributes the current among the links, allowing varying voltages to selectively blow one or more of the links. Sensing of the programmed state is performed by applying a voltage across the parallel links and measuring the current in comparison with a plurality of reference currents. Reduction in the overhead chip area per bit and in the serial data communication latency are obtained.Type: ApplicationFiled: October 19, 2017Publication date: February 8, 2018Inventors: Sunil Kumar Dusa, Richard Allen Bailey, Archana Venugopal, John Anthony Rodriguez, Michael Allen Ball
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Patent number: 9824769Abstract: A fuse-programmable register or memory location having a plurality of fusible links of differing electrical characteristics in parallel. In one embodiment, three fusible links with different resistances are provided, such that application of a programming voltage non-uniformly distributes the current among the links, allowing varying voltages to selectively blow one or more of the links. Sensing of the programmed state is performed by applying a voltage across the parallel links and measuring the current in comparison with a plurality of reference currents. Reduction in the overhead chip area per bit and in the serial data communication latency are obtained.Type: GrantFiled: May 4, 2016Date of Patent: November 21, 2017Assignee: TEXAS INSTRUMENTS INCORPORATEDInventors: Sunil Kumar Dusa, Richard Allen Bailey, Archana Venugopal, John Anthony Rodriguez, Michael Allen Ball
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Publication number: 20170018311Abstract: A fuse-programmable register or memory location having a plurality of fusible links of differing electrical characteristics in parallel. In one embodiment, three fusible links with different resistances are provided, such that application of a programming voltage non-uniformly distributes the current among the links, allowing varying voltages to selectively blow one or more of the links. Sensing of the programmed state is performed by applying a voltage across the parallel links and measuring the current in comparison with a plurality of reference currents. Reduction in the overhead chip area per bit and in the serial data communication latency are obtained.Type: ApplicationFiled: May 4, 2016Publication date: January 19, 2017Inventors: Sunil Kumar Dusa, Richard Allen Bailey, Archana Venugopal, John Anthony Rodriguez, Michael Allen Ball
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Publication number: 20150355886Abstract: A system on chip (SoC) may include a nonvolatile ferroelectric random access memory (FRAM). A random number may be created by applying operating power to the ferroelectric random access memory (FRAM) device and reading a sequence of virgin memory locations within the FRAM device to produce the random number sequence. The sequence of virgin memory locations had previously never been written. The random number may be produced during an initial boot of the SoC, for example. Alternatively, the random number may be saved by a test station during testing of the FRAM device after fabrication of the FRAM device. A memory test of the FRAM may then be performed, after which the random number may be stored in a defined location in the FRAM.Type: ApplicationFiled: June 10, 2014Publication date: December 10, 2015Inventors: Eric Thierry Peeters, William Francis Kraus, Manuel Gilberto Aguilar, John Anthony Rodriguez
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Patent number: 8778774Abstract: Methods are provided for enhancing properties, including polarization, of thin-film ferroelectric materials in electronic devices. According to one embodiment, a process for enhancing properties of ferroelectric material in a device having completed wafer processing includes applying mechanical stress to the device, independently controlling the temperature of the device to cycle the temperature from room temperature to at or near the Curie temperature of the ferroelectric material and back to room temperature while the device is applied with the mechanical stress, and then removing the mechanical stress. Certain of the subject methods can be performed as part of a back end of line (BEOL) process, and may be performed during the testing phase at wafer or die level.Type: GrantFiled: September 23, 2011Date of Patent: July 15, 2014Assignees: University of Florida Research Foundation, Inc., Texas Instruments IncorporatedInventors: Toshikazu Nishida, Antonio Guillermo Acosta, John Anthony Rodriguez, Theodore Sidney Moise
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Patent number: 8472236Abstract: Non-volatile latch circuits, such as in memory cells and flip-flops, that are constructed for reliability screening. The non-volatile latch circuits each include ferroelectric capacitors coupled to storage nodes, for example at the outputs of cross-coupled inverters. Separate plate lines are connected to the ferroelectric capacitors of the complementary storage nodes. A time-zero test of the latch stability margin is performed by setting a logic state at the storage nodes, then programming the state into the ferroelectric capacitors by polarization. After power-down, the plate lines are biased with a differential voltage relative to one another, and the latch is then powered up to attempt recall of the programmed state. The differential voltage disturbs the recall, and provides a measure of the cell margin and its later-life reliability.Type: GrantFiled: September 25, 2012Date of Patent: June 25, 2013Assignee: Texas Instruments IncorporatedInventors: Scott R. Summerfelt, John Anthony Rodriguez, Hugh P. McAdams, Steven Craig Bartling
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Patent number: 8441833Abstract: Non-volatile latch circuits, such as in memory cells and flip-flops, that are constructed for reliability screening. The non-volatile latch circuits each include ferroelectric capacitors coupled to storage nodes, for example at the outputs of cross-coupled inverters. Separate plate lines are connected to the ferroelectric capacitors of the complementary storage nodes. A time-zero test of the latch stability margin is performed by setting a logic state at the storage nodes, then programming the state into the ferroelectric capacitors by polarization. After power-down, the plate lines are biased with a differential voltage relative to one another, and the latch is then powered up to attempt recall of the programmed state. The differential voltage disturbs the recall, and provides a measure of the cell margin and its later-life reliability.Type: GrantFiled: April 12, 2012Date of Patent: May 14, 2013Assignee: Texas Instruments IncorporatedInventors: Scott R. Summerfelt, John Anthony Rodriguez, Hugh P. McAdams, Steven Craig Bartling
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Patent number: 8416598Abstract: Non-volatile latch circuits, such as in memory cells and flip-flops, that are constructed for reliability screening. The non-volatile latch circuits each include ferroelectric capacitors coupled to storage nodes, for example at the outputs of cross-coupled inverters. Separate plate lines are connected to the ferroelectric capacitors of the complementary storage nodes. A time-zero test of the latch stability margin is performed by setting a logic state at the storage nodes, then programming the state into the ferroelectric capacitors by polarization. After power-down, the plate lines are biased with a differential voltage relative to one another, and the latch is then powered up to attempt recall of the programmed state. The differential voltage disturbs the recall, and provides a measure of the cell margin and its later-life reliability.Type: GrantFiled: May 17, 2010Date of Patent: April 9, 2013Assignee: Texas Instruments IncorporatedInventors: Scott R. Summerfelt, John Anthony Rodriguez, Hugh P. McAdams, Steven Craig Bartling
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Publication number: 20130078742Abstract: Methods are provided for enhancing properties, including polarization, of thin-film ferroelectric materials in electronic devices. According to one embodiment, a process for enhancing properties of ferroelectric material in a device having completed wafer processing includes applying mechanical stress to the device, independently controlling the temperature of the device to cycle the temperature from room temperature to at or near the Curie temperature of the ferroelectric material and back to room temperature while the device is applied with the mechanical stress, and then removing the mechanical stress. Certain of the subject methods can be performed as part of a back end of line (BEOL) process, and may be performed during the testing phase at wafer or die level.Type: ApplicationFiled: September 23, 2011Publication date: March 28, 2013Applicants: Texas Instruments Incorporated, University of Florida Research Foundation, IncorporatedInventors: TOSHIKAZU NISHIDA, Antonio Guillermo Acosta, John Anthony Rodriguez, Theodore Sidney Moise
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Publication number: 20120195096Abstract: Non-volatile latch circuits, such as in memory cells and flip-flops, that are constructed for reliability screening. The non-volatile latch circuits each include ferroelectric capacitors coupled to storage nodes, for example at the outputs of cross-coupled inverters. Separate plate lines are connected to the ferroelectric capacitors of the complementary storage nodes. A time-zero test of the latch stability margin is performed by setting a logic state at the storage nodes, then programming the state into the ferroelectric capacitors by polarization. After power-down, the plate lines are biased with a differential voltage relative to one another, and the latch is then powered up to attempt recall of the programmed state. The differential voltage disturbs the recall, and provides a measure of the cell margin and its later-life reliability.Type: ApplicationFiled: April 12, 2012Publication date: August 2, 2012Applicant: Texas Instruments IncorporatedInventors: Scott R. Summerfelt, John Anthony Rodriguez, Hugh P. McAdams, Steven Craig Bartling
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Patent number: 7894284Abstract: A method (300) of identifying failing bits in a ferroelectric memory device including at least one ferroelectric capacitor includes (302) writing same state data to the first capacitor, and (304) baking the first capacitor for a first specified period of time at a first selected temperature. A same state read (306) is performed on the first capacitor after the baking. Based on the results from the same state read, it is determined whether an error occurred. The first specified period of time can be from 10 minutes to 2 hours and the first selected temperature can be in a range from 85° C. to 150° C. A repair can be performed (310) to corrected detected errors. A related method (500) can detect imprinted bits using a same state write (502), followed by a relatively high temperature bake (504), then a same state read (506). An opposite state date write (508) is performed followed by a relatively low temperature bake (510), and then an opposite state data read (512) to identify opposite state error or imprint.Type: GrantFiled: June 30, 2010Date of Patent: February 22, 2011Assignee: Texas Instruments IncorporatedInventors: John Anthony Rodriguez, Keith A. Remack, Boku Katsushi, John Lane Gertas
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Publication number: 20100296329Abstract: Non-volatile latch circuits, such as in memory cells and flip-flops, that are constructed for reliability screening. The non-volatile latch circuits each include ferroelectric capacitors coupled to storage nodes, for example at the outputs of cross-coupled inverters. Separate plate lines are connected to the ferroelectric capacitors of the complementary storage nodes. A time-zero test of the latch stability margin is performed by setting a logic state at the storage nodes, then programming the state into the ferroelectric capacitors by polarization. After power-down, the plate lines are biased with a differential voltage relative to one another, and the latch is then powered up to attempt recall of the programmed state. The differential voltage disturbs the recall, and provides a measure of the cell margin and its later-life reliability.Type: ApplicationFiled: May 17, 2010Publication date: November 25, 2010Applicant: TEXAS INSTRUMENTS INCORPORATEDInventors: Scott R. Summerfelt, John Anthony Rodriguez, Hugh P. McAdams, Steven Craig Bartling