Abstract: A powder treatment system with variable speed of rotation of a treatment vessel containing the powder at different stages of the treatment process. During treatment stages where gas flow may be present (e.g., pump down), the treatment vessel is spun at a centrifugal speed in order to confine the fine powder particles within the treatment vessel and prevent or substantially minimize elutriation losses. During treatment stages where gas flow may be minimal or not present (e.g., treatment dwell time), the rotational speed of the treatment vessel is a cataracting speed in order to uniformly treat the fine powder particles whilst avoiding or substantially minimizing elutriation losses.

Abstract: Chemical Vapor Deposition (CVD) systems with DC, RF, IF (intermediate frequency) and/or microwave plasma have processing chambers incorporate structure to provide improved temperature control, uniform distribution of the process gas, and plasma distribution between the positive electrode and grounded wafer. The temperature of a rotating wafer chuck during a chemical vapor deposition process may be controlled by a programmable logic controller that includes algorithms for controlling a temperature of the rotating wafer chuck.