Abstract: Low temperature processes for converting mixtures of metal inks into alloys. The alloys can be dealloyed by etching. A method comprising: depositing at least one precursor composition on at least one substrate to form at least one deposited structure, wherein the precursor composition comprises at least two metal complexes, including at least one first metal complex comprising at least one first metal and at least one second metal complex different from the first metal complex and comprising at least one second metal different from the first metal, treating the deposited structure so that the first metal and the second metal become elemental forms of the first metal and the second metal in a treated structure. Further, one can remove at least some of the first metal to leave a nanoporous material comprising at least the second metal. Precursor compositions can be formulated to be homogeneous compositions.

Abstract: Low temperature processes for converting mixtures of metal inks into alloys. The alloys can be dealloyed by etching. A method comprising: depositing at least one precursor composition on at least one substrate to form at least one deposited structure, wherein the precursor composition comprises at least two metal complexes, including at least one first metal complex comprising at least one first metal and at least one second metal complex different from the first metal complex and comprising at least one second metal different from the first metal, treating the deposited structure so that the first metal and the second metal become elemental forms of the first metal and the second metal in a treated structure. Further, one can remove at least some of the first metal to leave a nanoporous material comprising at least the second metal. Precursor compositions can be formulated to be homogeneous compositions.

Abstract: Low temperature processes for converting mixtures of metal inks into alloys. The alloys can be dealloyed by etching. A method comprising: depositing at least one precursor composition on at least one substrate to form at least one deposited structure, wherein the precursor composition comprises at least two metal complexes, including at least one first metal complex comprising at least one first metal and at least one second metal complex different from the first metal complex and comprising at least one second metal different from the first metal, treating the deposited structure so that the first metal and the second metal become elemental forms of the first metal and the second metal in a treated structure. Further, one can remove at least some of the first metal to leave a nanoporous material comprising at least the second metal. Precursor compositions can be formulated to be homogeneous compositions.

Abstract: Low temperature processes for converting mixtures of metal inks into alloys. The alloys can be dealloyed by etching. A method comprising: depositing at least one precursor composition on at least one substrate to form at least one deposited structure, wherein the precursor composition comprises at least two metal complexes, including at least one first metal complex comprising at least one first metal and at least one second metal complex different from the first metal complex and comprising at least one second metal different from the first metal, treating the deposited structure so that the first metal and the second metal become elemental forms of the first metal and the second metal in a treated structure. Further, one can remove at least some of the first metal to leave a nanoporous material comprising at least the second metal. Precursor compositions can be formulated to be homogeneous compositions.

Abstract: Low temperature processes for converting mixtures of metal inks into alloys. The alloys can be dealloyed by etching. A method comprising: depositing at least one precursor composition on at least one substrate to form at least one deposited structure, wherein the precursor composition comprises at least two metal complexes, including at least one first metal complex comprising at least one first metal and at least one second metal complex different from the first metal complex and comprising at least one second metal different from the first metal, treating the deposited structure so that the first metal and the second metal form elemental forms of the first metal and the second metal in a treated structure. Further, one can remove at least some of the first metal to leave a nanoporous material comprising at least the second metal. Precursor compositions can be formulated to be homogeneous compositions.

Abstract: Low temperature processes for converting mixtures of metal inks into alloys. The alloys can be dealloyed by etching. A method comprising: depositing at least one precursor composition on at least one substrate to form at least one deposited structure, wherein the precursor composition comprises at least two metal complexes, including at least one first metal complex comprising at least one first metal and at least one second metal complex different from the first metal complex and comprising at least one second metal different from the first metal, treating the deposited structure so that the first metal and the second metal become elemental forms of the first metal and the second metal in a treated structure. Further, one can remove at least some of the first metal to leave a nanoporous material comprising at least the second metal. Precursor compositions can be formulated to be homogeneous compositions.

Abstract: Metal complexes adapted to form metallic conductive films upon deposition and treatment. The complexes can have a high concentration of metal and can be soluble in polar protic solvent including ethanol and water. The metal complex can be a covalent complex and can comprise a first and second ligand. Low temperature treatment can be used to convert the complex to a metal. The metallic conductive film can have low resistivity and work function close to pure metal. Coinage metals can be used (e.g., Ag). The ligands can be dative bonding ligands including amines and carboxylate ligands. The ligands can be adapted to volatilize well. High yields of metal can be achieve with high conductivity.

Abstract: Low temperature processes for converting mixtures of metal inks into alloys. The alloys can be dealloyed by etching. A method comprising: depositing at least one precursor composition on at least one substrate to form at least one deposited structure, wherein the precursor composition comprises at least two metal complexes, including at least one first metal complex comprising at least one first metal and at least one second metal complex different from the first metal complex and comprising at least one second metal different from the first metal, treating the deposited structure so that the first metal and the second metal form elemental forms of the first metal and the second metal in a treated structure. Further, one can remove at least some of the first metal to leave a nanoporous material comprising at least the second metal. Precursor compositions can be formulated to be homogeneous compositions.

Abstract: Metal complexes adapted to form conductive metal films and lines upon deposition and treatment. The metal complex can be a covalent complex and can comprise a first and second ligand. Low temperature treatment can be used to convert the complex to a metal. The metal films and lines can have low resistivity and work function similar to pure metal. Coinage metals can be used (e.g., Ag, Au, Cu). The ligands can be dative bonding ligands including amines, unsymmetrical amines, and carboxylate ligands. Sulfur complexes can be used. Carboxylate ligands can be used. The complexes can have a high concentration of metal and can be soluble in aromatic hydrocarbon solvent. The ligands can be adapted to volatilize well. Inkjet printing can be carried out. High yields of metal can be achieve with high conductivity.

Abstract: A method of synthesizing a substantially pure homoleptic tetrakis secondary amine derivative of silicon, said derivative being substantially free of halogen and having the formula: Si(NRR1)4 wherein: R and R1 are the same or different and are substituted or unsubstituted straight or branched chain alkyl, groups having from 1 to 6 carbon atoms, said method comprising reacting a silicon halide having the formula: SiX4 wherein: X is bromine or iodine, with an excess of a secondary amine having the formula: HNRR1 wherein: R and R1 are as defined as above, for a time and under conditions sufficient to produce a reaction product mixture containing the desired product, Si(NRR1)4.