Patents by Inventor John Belsick

John Belsick has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10574204
    Abstract: Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.
    Type: Grant
    Filed: October 13, 2016
    Date of Patent: February 25, 2020
    Assignee: QORVO BIOTECHNOLOGIES, LLC
    Inventors: Kevin McCarron, John Belsick
  • Patent number: 10541662
    Abstract: Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.
    Type: Grant
    Filed: October 13, 2016
    Date of Patent: January 21, 2020
    Assignee: QORVO US, INC.
    Inventors: Kevin McCarron, John Belsick
  • Patent number: 10541663
    Abstract: Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.
    Type: Grant
    Filed: October 13, 2016
    Date of Patent: January 21, 2020
    Assignee: QORVO US, INC.
    Inventors: Kevin McCarron, John Belsick
  • Publication number: 20190296707
    Abstract: Bulk acoustic wave resonator structures include a bulk layer with inclined c-axis hexagonal crystal structure piezoelectric material supported by a substrate. The bulk layer may be prepared without first depositing a seed layer on the substrate. The bulk material layer has a c-axis tilt of about 32 degrees or greater. The bulk material layer may exhibit a ratio of shear coupling to longitudinal coupling of 1.25 or greater during excitation. A method for preparing a crystalline bulk layer having a c-axis tilt includes depositing a bulk material layer directly onto a substrate at an off-normal incidence. The deposition conditions may include a pressure of less than 5 mTorr and a deposition angle of about 35 degrees to about 85 degrees.
    Type: Application
    Filed: March 20, 2019
    Publication date: September 26, 2019
    Inventors: Derya Deniz, Robert Kraft, John Belsick
  • Publication number: 20190296710
    Abstract: Methods for depositing bulk layer crystalline material having a predetermined c-axis tilt on a substrate include a first step of depositing a first portion of bulk layer material at a first incidence angle to achieve a predetermined c-axis tilt, and a second step of depositing a second portion of the bulk material layer onto the first portion at a second incidence angle that is smaller than the first incidence angle. The second portion has a second c-axis tilt that substantially aligns with the first c-axis tilt.
    Type: Application
    Filed: March 20, 2019
    Publication date: September 26, 2019
    Inventors: Derya Deniz, Robert Kraft, John Belsick
  • Patent number: 10352904
    Abstract: A micro-electrical-mechanical system (MEMS) resonator device includes a top side electrode overlaid with an interface layer including a material having a surface (e.g., gold or other noble metal, or a hydroxylated oxide) that may be functionalized with a functionalization (e.g., specific binding or non-specific binding) material. The interface layer and/or an overlying blocking material layer are precisely patterned to control locations of the interface layer available to receive a self-assembled monolayer (SAM), thereby addressing issues of misalignment and oversizing of a functionalization zone that would arise by relying solely on microarray spotting. Atomic layer deposition may be used for deposition of the interface layer and/or an optional hermeticity layer. Sensors and microfluidic devices incorporating MEMS resonator devices are also provided.
    Type: Grant
    Filed: October 26, 2016
    Date of Patent: July 16, 2019
    Assignee: QORVO US, INC.
    Inventors: Rio Rivas, John Belsick, Matthew Ryder
  • Patent number: 10326425
    Abstract: The present disclosure provides an acoustic resonator with reduced mechanical clamping of an active region for enhanced shear mode response. More specifically, the present disclosure provides a solidly mounted BAW resonator device with an active region of piezoelectric material laterally surrounded by an inactive region with a reduced thickness of piezoelectric material such that at least an upper portion of the inactive region along a boundary of the active region is devoid of piezoelectric material. The resonator device provides a discontinuity along opposing lateral edges of the piezoelectric material of the active region to reduce mechanical clamping of the active region in a direction of maximum lateral displacement in shear mode operation. Increasing the mechanical isolation of the active region of piezoelectric material decreases mechanical damping of lateral vibrations of the active region which enhances the shear mode response for quasi-shear mode sensing.
    Type: Grant
    Filed: November 21, 2016
    Date of Patent: June 18, 2019
    Assignee: QORVO US, INC.
    Inventors: John Belsick, Rick Morton
  • Patent number: 10302595
    Abstract: A micro-electrical-mechanical system (MEMS) resonator device includes a top side electrode overlaid with a low water permeability hermeticity layer and an interface layer including a material (e.g., gold or a hydroxylated oxide surface) suitable for receiving a self-assembled monolayer (SAM) that may be functionalized with a functionalization (e.g., specific binding) material, with the foregoing layers being designed to have insubstantial impact on sensor performance. Atomic layer deposition may be used for deposition of the hermeticity and/or interface layers. The hermeticity layer protects the electrode material from attack in corrosive liquid environments, and the interface layer facilitates proper chemical binding of the SAM. Sensors and microfluidic devices incorporating MEMS resonator devices are also provided.
    Type: Grant
    Filed: October 26, 2016
    Date of Patent: May 28, 2019
    Assignee: QORVO US, INC.
    Inventors: John Belsick, Rick Morton, Matthew Ryder
  • Patent number: 10193524
    Abstract: A solidly mounted resonator structure includes an multi-layer acoustic reflector structure and a piezoelectric material layer arranged between the first and second electrode structures to form an active region, with the acoustic reflector structure providing enhanced reflection of shear and longitudinal modes of acoustic vibrations. The solidly mounted resonator structure is configured for transduction of an acoustic wave including a longitudinal component and a shear component. The acoustic reflector structure includes multiple sequentially arranged differential acoustic impedance layer units each including a low acoustic impedance material layer in contact with a high acoustic impedance material layer. A frequency corresponding to a minimum transmissivity of a second harmonic resonance of a longitudinal response is substantially matched to a frequency corresponding to a minimum transmissivity of a third harmonic resonance of a shear response.
    Type: Grant
    Filed: October 19, 2016
    Date of Patent: January 29, 2019
    Assignee: QORVO US, INC.
    Inventors: Rick Morton, John Belsick
  • Patent number: 10063210
    Abstract: Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.
    Type: Grant
    Filed: October 13, 2016
    Date of Patent: August 28, 2018
    Assignee: QORVO US, INC.
    Inventors: Kevin McCarron, John Belsick
  • Patent number: 9922809
    Abstract: Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.
    Type: Grant
    Filed: October 13, 2016
    Date of Patent: March 20, 2018
    Assignee: QORVO US, INC.
    Inventors: Kevin McCarron, John Belsick
  • Publication number: 20170149408
    Abstract: The present disclosure provides an acoustic resonator with reduced mechanical clamping of an active region for enhanced shear mode response. More specifically, the present disclosure provides a solidly mounted BAW resonator device with an active region of piezoelectric material laterally surrounded by an inactive region with a reduced thickness of piezoelectric material such that at least an upper portion of the inactive region along a boundary of the active region is devoid of piezoelectric material. The resonator device provides a discontinuity along opposing lateral edges of the piezoelectric material of the active region to reduce mechanical clamping of the active region in a direction of maximum lateral displacement in shear mode operation. Increasing the mechanical isolation of the active region of piezoelectric material decreases mechanical damping of lateral vibrations of the active region which enhances the shear mode response for quasi-shear mode sensing.
    Type: Application
    Filed: November 21, 2016
    Publication date: May 25, 2017
    Inventors: John Belsick, Rick Morton
  • Publication number: 20170134001
    Abstract: A micro-electrical-mechanical system (MEMS) resonator device includes a top side electrode overlaid with a low water permeability hermeticity layer and an interface layer including a material (e.g., gold or a hydroxylated oxide surface) suitable for receiving a self-assembled monolayer (SAM) that may be functionalized with a functionalization (e.g., specific binding) material, with the foregoing layers being designed to have insubstantial impact on sensor performance. Atomic layer deposition may be used for deposition of the hermeticity and/or interface layers. The hermeticity layer protects the electrode material from attack in corrosive liquid environments, and the interface layer facilitates proper chemical binding of the SAM. Sensors and microfluidic devices incorporating MEMS resonator devices are also provided.
    Type: Application
    Filed: October 26, 2016
    Publication date: May 11, 2017
    Inventors: John Belsick, Rick Morton, Matthew Ryder
  • Publication number: 20170117871
    Abstract: A micro-electrical-mechanical system (MEMS) resonator device includes a top side electrode overlaid with an interface layer including a material having a surface (e.g., gold or other noble metal, or a hydroxylated oxide) that may be functionalized with a functionalization (e.g., specific binding or non-specific binding) material. The interface layer and/or an overlying blocking material layer are precisely patterned to control locations of the interface layer available to receive a self-assembled monolayer (SAM), thereby addressing issues of misalignment and oversizing of a functionalization zone that would arise by relying solely on microarray spotting. Atomic layer deposition may be used for deposition of the interface layer and/or an optional hermeticity layer. Sensors and microfluidic devices incorporating MEMS resonator devices are also provided.
    Type: Application
    Filed: October 26, 2016
    Publication date: April 27, 2017
    Inventors: Rio Rivas, John Belsick, Matthew Ryder
  • Publication number: 20170117872
    Abstract: A solidly mounted resonator structure includes an multi-layer acoustic reflector structure and a piezoelectric material layer arranged between the first and second electrode structures to form an active region, with the acoustic reflector structure providing enhanced reflection of shear and longitudinal modes of acoustic vibrations. The solidly mounted resonator structure is configured for transduction of an acoustic wave including a longitudinal component and a shear component. The acoustic reflector structure includes multiple sequentially arranged differential acoustic impedance layer units each including a low acoustic impedance material layer in contact with a high acoustic impedance material layer. A frequency corresponding to a minimum transmissivity of a second harmonic resonance of a longitudinal response is substantially matched to a frequency corresponding to a minimum transmissivity of a third harmonic resonance of a shear response.
    Type: Application
    Filed: October 19, 2016
    Publication date: April 27, 2017
    Inventors: Rick Morton, John Belsick
  • Publication number: 20170111022
    Abstract: Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.
    Type: Application
    Filed: October 13, 2016
    Publication date: April 20, 2017
    Inventors: Kevin McCarron, John Belsick
  • Publication number: 20170111023
    Abstract: Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.
    Type: Application
    Filed: October 13, 2016
    Publication date: April 20, 2017
    Inventors: Kevin McCarron, John Belsick
  • Publication number: 20170111028
    Abstract: Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.
    Type: Application
    Filed: October 13, 2016
    Publication date: April 20, 2017
    Inventors: Kevin McCarron, John Belsick
  • Publication number: 20170110300
    Abstract: Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.
    Type: Application
    Filed: October 13, 2016
    Publication date: April 20, 2017
    Inventors: Kevin McCarron, John Belsick
  • Publication number: 20170111021
    Abstract: Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.
    Type: Application
    Filed: October 13, 2016
    Publication date: April 20, 2017
    Inventors: Kevin McCarron, John Belsick