Abstract: An etch rate of a nitride liner layer is improved relative to an etch rate of a nitride cap layer. The nitride liner layer is located at an exposed portion of a substrate adjacent to a stacked structure also located atop the substrate. The nitride cap layer is located atop the stacked structure. An oxide spacer is formed along sidewalls of the stacked structure. The nitride liner layer is patterned and etched to form at least one opening therein to the substrate while the nitride cap layer remains substantially intact.

Abstract: An etch rate of a nitride liner layer is improved relative to an etch rate of a nitride cap layer. The nitride liner layer is located at an exposed portion of a substrate adjacent to a stacked structure also located atop the substrate. The nitride cap layer is located atop the stacked structure. An oxide spacer is formed along sidewalls of the stacked structure. The nitride liner layer is patterned and etched to form at least one opening therein to the substrate while the nitride cap layer remains substantially intact.

Abstract: A thin film deposition method comprises the steps of preparing a magnetron sputtering system having a magnetic field generation unit for changing a magnetic field, mounting, as a target, a composite material on a cathode of the magnetron sputtering system, providing a to-be-processed substrate on an anode of the magnetron sputtering system, evacuating a chamber of the magnetron sputtering system and thereafter filling the chamber with inert gas, and applying, onto the cathode, one of DC power and RF power and, at the same time, an alternating magnetic field from a lower portion of the target, thereby controlling a cycle and intensity of the alternating magnetic field to change a ratio of the not less than two components of the thin film in a film thickness direction of the thin film.