Abstract: Disclosed are semiconductor devices with breakdown voltages that are more controlled and stable after repeated exposure to breakdown conditions than prior art devices. The disclosed devices can be used to provide secondary circuit functions not previously contemplated by the prior art.

Abstract: Various structures and methods for improving the performance of trench-shielded power semiconductor devices and the like are described. An exemplary device comprises a semiconductor region having a surface, a first area of the semiconductor region, a well region of a first conductivity type disposed in the semiconductor region and around the first area, and a plurality of trenches extending in a semiconductor region. Each trench haves a first end disposed in a first portion of the well region, a second end disposed in a second portion of the well region, and a middle portion between the first and second ends and disposed in the first area. Each trench further having opposing sidewalls lined with a dielectric layer, and a conductive electrode disposed on at least a portion of the dielectric layer.

Abstract: Various structures and methods for improving the performance of trench-shielded power semiconductor devices and the like are described.

Abstract: Disclosed are semiconductor devices with breakdown voltages that are more controlled and stable after repeated exposure to breakdown conditions than prior art devices. The disclosed devices can be used to provide secondary circuit functions not previously contemplated by the prior art.