Abstract: A system for applying a first coating composition and a second coating composition is provided herein. The system includes an atomizing applicator and a high transfer efficiency applicator defining a nozzle orifice. The system further includes a substrate assembly comprising a metal-containing substrate and a plastic-containing substrate. The metal-containing substrate is coupled to the plastic-containing substrate. The atomizing applicator is configured to apply the first coating composition to the metal-containing substrate. The high transfer efficiency applicator is configured to expel the second coating composition through the second nozzle orifice to the plastic-containing substrate.

Abstract: The present invention relates to methods of preparing nanowire networks, as well as to nanowire networks prepared thereby. The method comprises (a) providing a substrate coated with a film of a first polymer; (b) depositing nanofibers of a second polymer onto the film to form a patterned layer comprising a nanofibre network structure; (c) depositing a layer of a first metal onto the patterned layer; (d) performing a solvent development step to selectively remove the nanofibers leaving a negative pattern exposing the first polymer film; (e) performing an etching step to remove the exposed polymer film; (f) depositing a second metal or oxide thereof onto the negative pattern to form a tem plated nanowire network; and (g) performing a lift-off step to expose the nanowire network.

Abstract: Generally, examples described herein relate to methods and processing chambers and systems for forming a stacked pixel structure using epitaxial growth processes and device structures formed thereby. In an example, a first sensor layer is epitaxially grown on a crystalline surface on a substrate. A first isolation structure is epitaxially grown on the first sensor layer. A second sensor layer is epitaxially grown on the first isolation structure. A second isolation structure is epitaxially grown on the second sensor layer. A third sensor layer is epitaxially grown on the second isolation structure.

Abstract: The present disclosure provides a method for treating symptomatic orthostatic hypotension using a potent selective antagonist of N-methyl-D-aspartate receptor subunit 2B (NMDA-GluN2B or NR2B).

Abstract: Generally, examples described herein relate to methods and processing chambers and systems for forming a stacked pixel structure using epitaxial growth processes and device structures formed thereby. In an example, a first sensor layer is epitaxially grown on a crystalline surface on a substrate. A first isolation structure is epitaxially grown on the first sensor layer. A second sensor layer is epitaxially grown on the first isolation structure. A second isolation structure is epitaxially grown on the second sensor layer. A third sensor layer is epitaxially grown on the second isolation structure.

Abstract: A networked commercial interaction management method assembles information into bundles that include a data element reference and meta data describing the data element. The method distributes the meta data and the data element reference from the bundles through the network, and distributes copies of the data elements in the bundles from the network node of their respective data owners to the network nodes of accessors using the meta data and the data element reference distributed through the network. In at least one embodiment, the method periodically issues bundle version identifying signals to different nodes of the network. The bundle version identifying signals indicate changes to the data elements to the network nodes of accessors.

Abstract: The invention provides a method and system to control the mechanical stiffness of a nanoscale component comprising the steps of applying a current to the nano-scale component; and increasing or decreasing the mechanical stiffness of the material by controlling the current flow applied to the component. The invention also provides a NanoElectroMechanical (NEMs) device comprising a controlled mechanical stiffness.

Abstract: Methods of forming a fin structure for a field effect transistor are described. The methods may include the operations of patterning a mandrel on a surface of a substrate, and depositing an epitaxial layer of high-mobility channel material over exposed surfaces of the patterned mandrel. The epitaxial layer leaves a gap between adjacent columns of the patterned mandrel, and a dielectric material may be deposited in the gap between the adjacent columns of the patterned mandrel. The methods may also include planarizing the epitaxial layer to form a planarized epitaxial layer and exposing the columns of the patterned mandrel, and etching at least a portion of the exposed columns of the patterned mandrel and the dielectric material to expose at least a portion of the planarized epitaxial layer that forms the fin structure.

Abstract: A device comprising a first electrode; a second electrode; and an active material positioned between the first and second electrode, wherein the active material comprises a plurality of randomly positioned conducting wires coated with a nanoscale switchable dielectric layer, said conducting wires are adapted to provide a conducting path or paths when a voltage is applied by one of the electrodes or between said electrodes.

Abstract: Methods of forming a fin structure for a field effect transistor are described. The methods may include the operations of patterning a mandrel on a surface of a substrate, and depositing an epitaxial layer of high-mobility channel material over exposed surfaces of the patterned mandrel. The epitaxial layer leaves a gap between adjacent columns of the patterned mandrel, and a dielectric material may be deposited in the gap between the adjacent columns of the patterned mandrel. The methods may also include planarizing the epitaxial layer to form a planarized epitaxial layer and exposing the columns of the patterned mandrel, and etching at least a portion of the exposed columns of the patterned mandrel and the dielectric material to expose at least a portion of the planarized epitaxial layer that forms the fin structure.

Abstract: An aerosol fire extinguisher for dispensing a liquid wet chemical fire extinguishing agent, and a composition for the liquid wet chemical fire extinguishing agent, where the liquid wet chemical fire extinguishing agent is rated for class A, B, C and K fires. The fire extinguisher includes a container and a valve assembly affixed to the container. A hag is positioned within the container, where the bag includes an output tube connected in fluid communication to the valve assembly. An actuator is connected in fluid communication to the valve assembly opposite the output tube, where. the actuator has an elongated output orifice. A liquid wet chemical fire extinguishing agent is disposed within the bag and a propellant is disposed within the container, wherein the bag isolates the liquid wet chemical fire extinguishing agent from the propellant. The: configuration of the elongated output orifice expels the liquid wet chemical fire extinguishing agent in a substantially planar pattern onto the fire.

Abstract: Methods and apparatus for implanting a dopant material are provided herein. In some embodiments, a method of processing a substrate disposed within a process chamber may include (a) implanting a dopant material into a surface of the substrate to form a doped layer in the substrate and an elemental dopant layer atop the doped layer; (b) removing at least some of the elemental dopant layer from atop the surface of the substrate; and (c) implanting the dopant material into the doped layer of the substrate; wherein (a)-(c) are performed without removing the substrate from the process chamber; and wherein (a)-(c) are repeated until at least one of a desired dopant implantation depth or a desired dopant implantation density is achieved.

Abstract: An end cap for an exhaust treatment device is disclosed. The end cap has a cylindrical housing with an axial direction, a radial direction substantially orthogonal to the axial direction, a first open end, and a second closed end opposing the first open end in the axial direction. The end cap also has an integral port member extending from an annular surface of the cylindrical housing. The integral port member has a central axis aligned in the radial direction, and an exterior surface of the integral port member tangentially connects to an exterior surface of the cylindrical housing.

Abstract: A networked commercial interaction management method assembles information into bundles that include a data element reference and meta data describing the data element. The method distributes the meta data and the data element reference from the bundles through the network, and distributes copies of the data elements in the bundles from the network node of their respective data owners to the network nodes of accessors using the meta data and the data element reference distributed through the network. In at least one embodiment, the method periodically issues bundle version identifying signals to different nodes of the network. The bundle version identifying signals indicate changes to the data elements to the network nodes of accessors.

Abstract: A phase controllable field effect transistor device is described. The device provides first and second scattering sites disposed at either side of a conducting channel region, the conducting region being gated such that on application of an appropriate signal to the gate, energies of the electrons in the channel region defined between the scattering centers may be modulated.

Abstract: An end cap for an exhaust treatment device is disclosed. The end cap has a cylindrical housing with an axial direction, a radial direction substantially orthogonal to the axial direction, a first open end, and a second closed end opposing the first open end in the axial direction. The end cap also has an integral port member extending from an annular surface of the cylindrical housing. The integral port member has a central axis aligned in the radial direction, and an exterior surface of the integral port member tangentially connects to an exterior surface of the cylindrical housing.

Abstract: A system for dispensing a customized nutritional serving is made up of ingredients stored within a device incorporating the system. The device has a controller in whose memory is stored an inventory of the ingredients available in the device, their compositions and properties and customer profile data. The controller is programmed to formulate a serving which best matches the customized serving selected by the customer within constraints set by the programming taking into account the inventory of ingredients and the health profile of the customer. The customer is then presented with the selected serving and either accepts it or modifies it. The device is then programmed to prepare and dispense the final selection.

Abstract: An end cap for an exhaust treatment device is disclosed. The end cap has a cylindrical housing with an axial direction, a radial direction substantially orthogonal to the axial direction, a first open end, and a second closed end opposing the first open end in the axial direction. The end cap also has an integral port member extending from an annular surface of the cylindrical housing. The integral port member has a central axis aligned in the radial direction, and an exterior surface of the integral port member tangentially connects to an exterior surface of the cylindrical housing.

Abstract: Methods for forming embedded epitaxial layers containing silicon and carbon are disclosed. Specific embodiments pertain to the formation embedded epitaxial layers containing silicon and carbon on silicon wafers. In specific embodiments an epitaxial layer of silicon and carbon is non-selectively formed on a substrate or silicon wafer, portions of this layer are removed to expose the underlying substrate or silicon wafer, and an epitaxial layer containing silicon is formed on the exposed substrate or silicon wafers. In specific embodiments, gates are formed on the resulting silicon-containing epitaxial layers.

Abstract: A phase controllable field effect transistor device is described. The device provides first and second scattering sites disposed at either side of a conducting channel region, the conducting region being gated such that on application of an appropriate signal to the gate, energies of the electrons in the channel region defined between the scattering centres may be modulated.