Abstract: A straw-in-straw degassing unit for degassing liquid formulas and compositions, and pouches and dispensing containers including the degassing unit. A straw-in-straw degassing unit is comprised of an outer tube and includes a first outer tube aperture at a first outer tube location and a second outer tube aperture at a second outer tube location. An inner tube is slidably nested within an interior of the outer tube, and includes a first inner tube aperture and a buoyant element coupled to the inner tube. The inner and outer tubes slidably interact, with changes in a gravitational orientation of the degassing unit, for conditional alignment of apertures therebetween and degassing of liquid formulas and compositions; in this manner, a liquid can be expulsed from a container without substantial expulsion of gas therefrom.

Abstract: A formula container assembly with a secondary valve degassing component. A formula container assembly includes a formula container comprising a container chamber and a container outlet; a primary valve comprising a primary valve inlet and a primary valve outlet; and a secondary valve comprising a secondary valve inlet and a secondary valve outlet, wherein the primary valve inlet and the secondary valve inlet are in fluid communication with the container chamber.

Abstract: The present invention relates to methods of preparing nanowire networks, as well as to nanowire networks prepared thereby. The method comprises (a) providing a substrate coated with a film of a first polymer; (b) depositing nanofibers of a second polymer onto the film to form a patterned layer comprising a nanofibre network structure; (c) depositing a layer of a first metal onto the patterned layer; (d) performing a solvent development step to selectively remove the nanofibers leaving a negative pattern exposing the first polymer film; (e) performing an etching step to remove the exposed polymer film; (f) depositing a second metal or oxide thereof onto the negative pattern to form a tem plated nanowire network; and (g) performing a lift-off step to expose the nanowire network.

Abstract: Generally, examples described herein relate to methods and processing chambers and systems for forming a stacked pixel structure using epitaxial growth processes and device structures formed thereby. In an example, a first sensor layer is epitaxially grown on a crystalline surface on a substrate. A first isolation structure is epitaxially grown on the first sensor layer. A second sensor layer is epitaxially grown on the first isolation structure. A second isolation structure is epitaxially grown on the second sensor layer. A third sensor layer is epitaxially grown on the second isolation structure.

Abstract: The present disclosure provides a method for treating symptomatic orthostatic hypotension using a potent selective antagonist of N-methyl-D-aspartate receptor subunit 2B (NMDA-GluN2B or NR2B).

Abstract: Generally, examples described herein relate to methods and processing chambers and systems for forming a stacked pixel structure using epitaxial growth processes and device structures formed thereby. In an example, a first sensor layer is epitaxially grown on a crystalline surface on a substrate. A first isolation structure is epitaxially grown on the first sensor layer. A second sensor layer is epitaxially grown on the first isolation structure. A second isolation structure is epitaxially grown on the second sensor layer. A third sensor layer is epitaxially grown on the second isolation structure.

Abstract: The invention provides a method and system to control the mechanical stiffness of a nanoscale component comprising the steps of applying a current to the nano-scale component; and increasing or decreasing the mechanical stiffness of the material by controlling the current flow applied to the component. The invention also provides a NanoElectroMechanical (NEMs) device comprising a controlled mechanical stiffness.

Abstract: Methods of forming a fin structure for a field effect transistor are described. The methods may include the operations of patterning a mandrel on a surface of a substrate, and depositing an epitaxial layer of high-mobility channel material over exposed surfaces of the patterned mandrel. The epitaxial layer leaves a gap between adjacent columns of the patterned mandrel, and a dielectric material may be deposited in the gap between the adjacent columns of the patterned mandrel. The methods may also include planarizing the epitaxial layer to form a planarized epitaxial layer and exposing the columns of the patterned mandrel, and etching at least a portion of the exposed columns of the patterned mandrel and the dielectric material to expose at least a portion of the planarized epitaxial layer that forms the fin structure.

Abstract: A device comprising a first electrode; a second electrode; and an active material positioned between the first and second electrode, wherein the active material comprises a plurality of randomly positioned conducting wires coated with a nanoscale switchable dielectric layer, said conducting wires are adapted to provide a conducting path or paths when a voltage is applied by one of the electrodes or between said electrodes.

Abstract: Methods of forming a fin structure for a field effect transistor are described. The methods may include the operations of patterning a mandrel on a surface of a substrate, and depositing an epitaxial layer of high-mobility channel material over exposed surfaces of the patterned mandrel. The epitaxial layer leaves a gap between adjacent columns of the patterned mandrel, and a dielectric material may be deposited in the gap between the adjacent columns of the patterned mandrel. The methods may also include planarizing the epitaxial layer to form a planarized epitaxial layer and exposing the columns of the patterned mandrel, and etching at least a portion of the exposed columns of the patterned mandrel and the dielectric material to expose at least a portion of the planarized epitaxial layer that forms the fin structure.

Abstract: An aerosol fire extinguisher for dispensing a liquid wet chemical fire extinguishing agent, and a composition for the liquid wet chemical fire extinguishing agent, where the liquid wet chemical fire extinguishing agent is rated for class A, B, C and K fires. The fire extinguisher includes a container and a valve assembly affixed to the container. A hag is positioned within the container, where the bag includes an output tube connected in fluid communication to the valve assembly. An actuator is connected in fluid communication to the valve assembly opposite the output tube, where. the actuator has an elongated output orifice. A liquid wet chemical fire extinguishing agent is disposed within the bag and a propellant is disposed within the container, wherein the bag isolates the liquid wet chemical fire extinguishing agent from the propellant. The: configuration of the elongated output orifice expels the liquid wet chemical fire extinguishing agent in a substantially planar pattern onto the fire.

Abstract: Methods and apparatus for implanting a dopant material are provided herein. In some embodiments, a method of processing a substrate disposed within a process chamber may include (a) implanting a dopant material into a surface of the substrate to form a doped layer in the substrate and an elemental dopant layer atop the doped layer; (b) removing at least some of the elemental dopant layer from atop the surface of the substrate; and (c) implanting the dopant material into the doped layer of the substrate; wherein (a)-(c) are performed without removing the substrate from the process chamber; and wherein (a)-(c) are repeated until at least one of a desired dopant implantation depth or a desired dopant implantation density is achieved.

Abstract: A phase controllable field effect transistor device is described. The device provides first and second scattering sites disposed at either side of a conducting channel region, the conducting region being gated such that on application of an appropriate signal to the gate, energies of the electrons in the channel region defined between the scattering centers may be modulated.

Abstract: Methods for forming embedded epitaxial layers containing silicon and carbon are disclosed. Specific embodiments pertain to the formation embedded epitaxial layers containing silicon and carbon on silicon wafers. In specific embodiments an epitaxial layer of silicon and carbon is non-selectively formed on a substrate or silicon wafer, portions of this layer are removed to expose the underlying substrate or silicon wafer, and an epitaxial layer containing silicon is formed on the exposed substrate or silicon wafers. In specific embodiments, gates are formed on the resulting silicon-containing epitaxial layers.

Abstract: A phase controllable field effect transistor device is described. The device provides first and second scattering sites disposed at either side of a conducting channel region, the conducting region being gated such that on application of an appropriate signal to the gate, energies of the electrons in the channel region defined between the scattering centres may be modulated.

Abstract: A molecular quantum interference device is provided. A method for the design of such devices is also provided, the method including modelling of device performance.

Abstract: Methods for forming embedded epitaxial layers containing silicon and carbon are disclosed. Specific embodiments pertain to the formation embedded epitaxial layers containing silicon and carbon on silicon wafers. In specific embodiments an epitaxial layer of silicon and carbon is non-selectively formed on a substrate or silicon wafer, portions of this layer are removed to expose the underlying substrate or silicon wafer, and an epitaxial layer containing silicon is formed on the exposed substrate or silicon wafers. In specific embodiments, gates are formed on the resulting silicon-containing epitaxial layers.

Abstract: A method for determining dental alignment of a 3-dimensional model of one or more teeth of a patient comprises the steps of: (a) obtaining a radiograph of the teeth of the patient; (b) obtaining a digital image from the radiograph indicative of the dental alignment of the teeth relative to a dental arch of the patient; (c) overlaying the 3-dimensional model of the teeth with the digital image obtained from the radiograph; (d) determining vertical and horizontal mis-alignment of the teeth in the 3-dimensional model relative to the digital image obtained from the radiograph; and (e) adjusting the 3-dimensional model to correct for the mis-alignment, thereby producing an adjusted 3-dimensional model of the teeth that is corrected for the vertical and horizontal alignment of the teeth relative to the dental arch.

Abstract: A method of comparing the size of a feature in sequential X-ray images includes the steps of: forming first and second sequential X-ray images including an image of the feature, an image of a first target located directly adjacent the feature and an image of a second target located between the object and an X-ray detector; calculating scale factors for the first and second X-ray images based on the relative sizes of the images of the first and second targets in the X-ray images; measuring the sizes of the feature in the first and second X-ray images; adjusting the measured sizes of the feature in the first and second X-ray images by the respective scale factors; and comparing the adjusted measured sizes. A computer program product for performing the method is also provided.