Abstract: The present invention relates to devices for cutting tile and scoring concrete masonry units. These devices may function without generating large amounts of dust, while still allowing high-throughput cutting and scoring. The present invention features devices for cutting tile that may allow for multiple tiles to be cut simultaneously, thus boosting efficiency. The present invention features devices for scoring concrete masonry units that may enable precision scoring of multiple faces of the CMU. After the CMU is scored by the device of the present invention, it may be easily split along the scoring plane by hitting the top of the CMU with a hammer.

Abstract: An adjustable support is used to support a preformed mold in a molding operation. The adjustable support includes an aggregate or particulate material that in a now stressed or reduced stress state is flowable to allow shaping thereof to effectively support a back face of the preformed mold. The adjustable support is then jammed to rigidify or fix the shape thereby effectively supporting the preformed mold. The adjustable support is changed from an adjustable state to a support state preferably by applying a vacuum pressure to the aggregate material. In the adjustable state an airflow can be introduced to the aggregate material to allow movement and/or displacement of the material.

Abstract: An adjustable support is used to support a preformed mold in a molding operation. The adjustable support includes an aggregate or particulate material that in a now stressed or reduced stress state is flowable to allow shaping thereof to effectively support a back face of the preformed mold. The adjustable support is then jammed to rigidify or fix the shape thereby effectively supporting the preformed mold. The adjustable support is changed from an adjustable state to a support state preferably by applying a vacuum pressure to the aggregate material. In the adjustable state an airflow can be introduced to the aggregate material to allow movement and/or displacement of the material.

Abstract: Single ion conductors comprising polymer electrolytes prepared by grafting a salt compound onto a comb-branch polymer or dendrimer are disclosed having superior properties.

Abstract: A device for holding a mouth of a plastic bag in an open position is molded of a plastic material that includes a finger hole and locking slot for retaining the bag within the device. The locking slot includes a directing member for maintaining a free end of a bag tail in the locking slot. This arrangement preferably is molded as a one piece product and has been found to be adaptable to bags of different capacities and materials. In a preferred embodiment, two finger holes are provided with each finger hole having a locking slot and directing member.

Abstract: A self-aligned MISFET transistor (500H) on a silicon substrate (502), but having a graded SiGe channel or a Ge channel. The channel (526) is formed using gas-cluster ion beam (524) irradiation and provides higher channel mobility than conventional silicon channel MISFETs. A manufacturing method for such a transistor is based on a replacement gate process flow augmented with a gas-cluster ion beam processing step or steps to form the SiGe or Ge channel. The channel may also be doped by gas-cluster ion beam processing either as an auxiliary step or simultaneously with formation of the increased mobility channel.

Abstract: New polymer electrolytes were prepared by in situ cross-linking of allyl functional polymers based on hydrosilation reaction using a multifunctional silane cross-linker and an organoplatinum catalyst. The new cross-linked electrolytes are insoluble in organic solvent and show much better mechanical strength. In addition, the processability of the polymer electrolyte is maintained since the casting is finished well before the gel formation.

Abstract: Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams.

Abstract: Single ion conductors comprising polymer electrolytes prepared by grafting a salt compound onto a comb-branch polymer or dendrimer are disclosed having superior properties.

Abstract: Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams.

Abstract: Methods and apparatus are described for irradiating one or more substrate surfaces with accelerated gas clusters including strain-inducing atoms for blanket and/or localized introduction of such atoms into semiconductor substrates, with additional, optional introduction of dopant atoms and/or C. Processes for forming semiconductor films infused into and/or deposited onto the surfaces of semiconductor and/or dielectric substrates are also described. Such films may be doped and/or strained as well.

Abstract: A method for forming a shallow junction in a semiconductor wafer may include amorphizing the wafer to obtain a depth of end-of-range (EOR) defects that is smaller than a desired junction depth in a range of about 13 nm to about 50 nm, implanting a dopant material into the wafer at a selected dose and energy to produce the desired junction depth, and activating the dopant material by thermal processing of the semiconductor wafer at a selected temperature for a selected time consistent with low-temperature solid phase epitaxy (SPE) annealing to form the shallow junction. The control of the EOR depth through a preamorphizing implant to less than the junction depth provides for a low leakage junction and the low-temperature SPE anneal prevents diffusion of the dopant beyond the desired junction depth.

Abstract: New polymer electrolytes were prepared by in situ cross-linking of allyl functional polymers based on hydrosilation reaction using a multifunctional silane cross-linker and an organoplatinum catalyst. The new cross-linked electrolytes are insoluble in organic solvent and show much better mechanical strength. In addition, the processability of the polymer electrolyte is maintained since the casting is finished well before the gel formation.

Abstract: Single ion conductors comprising polymer electrolytes prepared by grafting a salt compound onto a comb-branch polymer or dendrimer are disclosed having superior properties.

Abstract: A spray shield for a field sprayer includes a front skirt and a rear skirt each extending along a plurality of nozzles of the field sprayer. For each nozzle there is provided a dome-shaped enclosure which is attached to the front and rear skirt and extends therefrom upwardly toward the nozzle so that between each enclosure and the next there is defined a V-shaped through which prevailing winds can pass. The dome enclosure terminates at an edge surrounding an opening with the edge lying in a plane below the height of the top of the nozzle so that an initial portion of the spray pattern is exposed to view above the dome enclosure while an open portion of the spray pattern is protected by the dome enclosure and by the skirts from the prevailing winds.

Abstract: A floation device includes a molded outer shell defining a hollow interior. The hollow interior is filled with recycled plastic bottles of the type used conventionally for soft drink containers which are molded from a plastic material and include a generally cylindrical body and a neck at one end of the body which is closed by a cap. The outer container is shaped with wall portions having a curvature equal to the outside curvature of the bottles and indentations for receiving the necks of the bottles which are aligned neck to neck in rows. The recycled bottles provide a filling for the rotational molded shell which prevent loss of buoyancy if the shell is perforated and prevent expansion and contraction problems due to temperature changes.

Abstract: An improved method is disclosed for forming one or more N- LDD regions in an integrated circuit structure wherein there is no offset between the gate electrode and the source and drain regions in the resulting structure which comprises the steps of: forming a polysilicon gate electrode over a semiconductor wafer substrate, N- doping the substrate to form one or more N- LDD regions, selectively depositing polysilicon on the polysilicon sidewalls of the gate electrode, and then N+ doping the substrate to form N+ source and drain regions in the substrate using the selectively deposited polysilicon as a mask over the N- LDD regions previously formed in the substrate.