Abstract: The present invention is directed to the fabrication of thin aluminum anode batteries using a highly reproducible process that enables high volume manufacturing of the galvanic cells. In the present invention, semiconductor fabrication methods are used to fabricate aluminum galvanic cells, wherein a catalytic material to be used as the cathode is deposited on a substrate and an insulating spacing material is deposited on the cathode and patterned using photolithography. The spacing material can either be used as a sacrificial layer to expose the electrodes or serve as a support for one of the electrodes. Similarly, the aluminum anode may be deposited and patterned on another substrate and bonded to the first substrate, or can be deposited directly on the insulating material prior to patterning. The cell is packaged and connected to a delivery system to provide delivery of the electrolyte when activation of the cell is desired.

Abstract: In accordance with an embodiment of the present invention, a thermally induced single-use valve is provided including a silicon wafer having a top surface and a bottom surface and at least one cavity formed in the bottom surface of the wafer, a thermally deformable membrane suspended across the cavity on the top surface of the wafer and at least one resistive element patterned on top of the thermally deformable membrane.

Abstract: The present invention in directed to the fabrication of thin aluminum anode batteries using a highly reproducible process that enables high volume manufacturing of the galvanic cells.

Abstract: The present invention is a dielectric film and its method of fabrication. The dielectric film of the present invention includes silicon oxygen fluorine and nitrogen wherein the interlayer dielectric comprises between 0.01-0.1 atomic percent nitrogen.