Abstract: A microwave isolator including a driving circuit and a receiving circuit, wherein the driving circuit receives an input signal from a first isolated circuit and generates a corresponding radio frequency (RF) signal and the receiving circuit detects and decodes the corresponding RF signal and provides a corresponding output signal to a second isolated circuit. The driving circuit contains an oscillator for generating the corresponding RF signal based on the input signal from the first isolated circuit, a transmitting antenna for transmitting the corresponding RF signal, and a microwave switch interposed between the oscillation means and the transmitting antenna for switching the RF signal to the antenna. The receiving circuit contains a receiving antenna to receive the corresponding RF signal and means for detecting and decoding the received corresponding RF signal and providing the corresponding output signal to the second isolated circuit.

Abstract: Electromigration in the source and drain conductors of a semiconductor device is reduced by increasing the cross-sectional areas of these conductors in accordance with an increase in a magnitude of current, thereby enabling the semiconductor device to operate at high temperatures.

Abstract: An improved Silicon-On-Insulator (SOI) semiconductor device having a first and second asymmetric transistor, each having a source, a body, a gate, and a drain. The respective gates and drains of the asymmetric transistors are connected together such that a transistor pair is formed which is operable as a single symmetric transistor. An NMOS transistor pair may be connected in parallel with a PMOS transistor pair so as to form a symmetric Pass Gate.