Abstract: Apparatus for processing semiconductor wafers and the like in an ionized gas plasma. A reaction chamber is divided into two separate regions, and driven and grounded electrodes are positioned outside the reaction chamber adjacent to respective ones of the regions. Wafers or other workpieces to be processed are placed in the region adjacent to the grounded electrode, and the gas to be ionized is introduced into the region adjacent to the driven electrode. The ionization of the gas is confined to the region adjacent to the driven electrode, and the active species pass through the perforated shield to the wafers or other workpieces.

Abstract: Apparatus for conducting a cylindrical work element towards and away from a machine tool such as a centerless grinder capable of imparting a spiral motion to the work element, the apparatus including a roll conveyor having positionable rolls that are adjustable to produce a relatively deep trough for securely supporting the work element against the action of the tool and to provide a means for coordinating the surface speed of the rolls with that of the work whereby the work is precluded from slipping or sliding over the rolls as it is fed towards or away from the work station of the machine tool.