Patents by Inventor John C. Evans
John C. Evans has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 5188598Abstract: A device for safely removing contaminated needles from syringes without exposing medical personnel to unnecessary health risks. The device requires only one hand to operate; medical personnel simply insert the syringe and press downwardly. The pressure exerted by the user causes disconnect gears to engage the collar of the needle and unscrew the needle from the syringe, at which time the needle falls into a container. The device includes means for forcing needles into the container when the rubber portion of an unscrewed needle gets "trapped" in the disconnect gears, and also includes means for preventing further disengagement of needles when the container cannot safely accommodate additional needles. Also included in the disclosed device is an opening for receiving needles other than the type that can be disconnected by the gears. The container includes a recess for storing a permanent lid, which is applied to the device when the container is full and ready to be disposed.Type: GrantFiled: November 1, 1990Date of Patent: February 23, 1993Assignee: Post Medical, Inc.Inventors: William H. Thead, John C. Evans
-
Patent number: 4986811Abstract: A system is disclosed for removing disposable needles from syringes, which requires only one hand to operate and which exposes the user to minimal risk of contact with the contaminated needle. The user inserts the syringe and presses downwardly, whereupon disconnecting gears engaging the collar of the needle unscrew the needle and allow it to drop into a container. Return springs then automatically return the device to its original configuration.Type: GrantFiled: September 23, 1988Date of Patent: January 22, 1991Assignee: Post Medical, Inc.Inventors: William H. Thead, John C. Evans
-
Patent number: 4802602Abstract: An insulating device for a beverage container including a flexible insulating sleeve for receiving a beverage container therein. A cover is provided for covering the top opening of the insulating device. A strap is provided to cover the bottom of the insulating device whereby the beverage container cannot pass through the insulating device. The cover is provided with two fastening devices whereby the cover may be secured over the beverage container or may be looped around to form a handle for the insulating device. A belt loop is also provided on the insulating device whereby the entire device may be secured to a belt.Type: GrantFiled: December 8, 1987Date of Patent: February 7, 1989Assignee: Kover-up, Inc.Inventors: John C. Evans, Charles E. Campbell, John E. Blair
-
Patent number: 4715717Abstract: The surface texture of a moving transparent film is determined by applying a beam of collimated electromagnetic radiation at an angle of incidence sufficient to produce detectable backscattered radiation; collecting the backscattered electromagnetic radiation while avoiding specularly reflected radiation; and evaluating the intensity of the collected radiation for two components, a first component corresponding to the haze percent of the film and arising from the scattering of the collimated electromagnetic radiation by microscopic and submicroscopic features of the film surfaces, and a second component produced by the scattering of the collimated electromagnetic radiation by macroscopic surface blemishes, gouges and gel-like particles on each surface of the transparent film.Type: GrantFiled: December 5, 1985Date of Patent: December 29, 1987Assignee: The Dow Chemical CompanyInventor: John C. Evans
-
Patent number: 4715718Abstract: A method and apparatus for the on-line determination of the bonding strength of a plural layer laminate having at least one outer layer transparent to electromagnetic radiation, said method comprising: directing a collimated beam of electromagnetic radiation onto the substantially flat surface of said laminate at an incident angle substantially greater than a normal to the surface of said laminate; measuring the reflected intensity of said electromagnetic radiation at two substantially different diffuse reflectance angles; converting said reflected intensity to an intensity ratio by dividing the greater intensity value by the lesser intensity value to obtain a value which is proportional to the adhesion of the laminate based upon a pre-determined relationship of the bonding strength of said laminate and the value of said intensity ratio.Type: GrantFiled: June 24, 1985Date of Patent: December 29, 1987Assignee: The Dow Chemical CompanyInventor: John C. Evans
-
Patent number: 4573761Abstract: A fiber-optic probe, useful for light scattering and luminescence measurements, which comprises at least one optical fiber for transmitting light into a sample and at least two optical fibers for collecting light from the sample. The probe may further comprise a shield surrounding the fibers and having an optical window at one end to protect the fibers from hostile environments. When used in conjunction with a laser as a light source, the probe is particularly suited for Raman spectroscopy.Type: GrantFiled: September 14, 1983Date of Patent: March 4, 1986Assignee: The Dow Chemical CompanyInventors: Richard D. McLachlan, Gary L. Jewett, John C. Evans
-
Patent number: 4376872Abstract: A high voltage multijunction solar cell comprises a plurality of discrete voltage generating regions, or unit cells, which are formed in a single semiconductor wafer (10) and are connected together so that the voltages of the individual cells are additive. The unit cells comprise doped regions of opposite conductivity types (30, 32) separated by a gap. The method includes forming V-shaped grooves (16) in the wafer and thereafter orienting the wafer so that ions of one conductivity type can be implanted in one face (e.g., 16a) of the groove while the other face (e.g., 16b) is shielded. A metallization layer (22) is applied and selectively etched away to provide connections between the unit cells.Type: GrantFiled: March 18, 1982Date of Patent: March 15, 1983Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space AdministrationInventors: John C. Evans, An-Ti Chai, Chandra P. Goradia
-
Patent number: 4360701Abstract: A heat transparent high intensity solar cell has improved efficiency.A surface of each solar cell (10,16,22) has a plurality of grooves (12,14,18,20,24). Each groove has a vertical face (26,30) and a slanted face (28,32) that is covered by a reflecting metal (34,36).Light rays (38,40) are reflected from the slanted face through the vertical face where they traverse a photovoltaic junction (60). As the light rays travel to the slanted face of an adjacent groove, they again traverse the junction. The underside of the reflecting coating directs the light rays toward the opposite surface of solar cell as they traverse the junction again. When the light rays travel through the solar cell and reach the saw toothed grooves on the under side, the process of reflection and repeatedly traversing the junction again takes place. The light rays ultimately emerge from the solar cell as shown in FIG. 4.Type: GrantFiled: May 15, 1981Date of Patent: November 23, 1982Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space AdministrationInventor: John C. Evans, Jr.
-
Patent number: 4341918Abstract: A high voltage multijunction solar cell is provided wherein a plurality of discrete voltage generating regions or unit cells are formed in a single generally planar semiconductor body (12). The unit cells comprise a doped regions (20, 22) of opposite conductivity type separated by a gap or undiffused region (24). Metal contacts (26) connect adjacent cells together in series so that the output voltages of the individual cells are additive. In some embodiments, doped field regions (14) separated by gap (16) overlie the unit cells but the cells may be formed in both faces of the wafer (FIG. 2).Type: GrantFiled: December 24, 1980Date of Patent: July 27, 1982Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space AdministrationInventors: John C. Evans, Jr., An-Ti Chai, Chandra P. Goradia
-
Patent number: 4335503Abstract: A method is provided for making a high voltage multijunction solar cell which comprises a plurality of discrete voltage generating regions, or unit cells, which are formed in a single semiconductor wafer (10) and are connected together so that the voltages of the individual cells are additive. The unit cells comprise doped regions of opposite conductivity types (30, 32) separated by a gap. The method includes forming V-shaped grooves (16) in the wafer and thereafter orienting the wafer so that ions of one conductivity type can be implanted in one face (e.g., 16a) of the groove while the other face (e.g., 16b) is shielded. A metallization layer (22) is applied and selectively etched away to provide connections between the unit cells.Type: GrantFiled: December 24, 1980Date of Patent: June 22, 1982Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space AdministrationInventors: John C. Evans, Jr., An-Ti Chai, Chandra P. Goradia
-
Patent number: 4217633Abstract: A monolithie multijunction solar cell is modified by fabricating an integrated circuit inverter on the back of the cell to produce a device capable of generating an alternating current output. In another embodiment, integrated circuit power conditioning electronics is incorporated in a module containing a solar cell power supply.Type: GrantFiled: August 10, 1979Date of Patent: August 12, 1980Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space AdministrationInventor: John C. Evans, Jr.
-
Patent number: 4189335Abstract: The distribution of a coating composition, e.g., a binder composition, on a carpet structure is determined by illuminating the coated carpet surface with light and measuring the intensity of the light returned therefrom. The intensity of the returned light relates to the distribution, i.e., (1) the amount of the illuminated surface which is coated and (2) the depth of said coating, of the coating on the carpet structure.Type: GrantFiled: September 28, 1978Date of Patent: February 19, 1980Assignee: The Dow Chemical CompanyInventors: John C. Evans, Edwin L. Wittbrodt
-
Patent number: 4135290Abstract: A heterojunction or Schottky barrier photovoltaic device comprising a conductive base metal layer compatible with and coating predominately the exposed surface of the p-type substrate of the device such that a back surface field region is formed at the interface between the device and the base metal layer, a transparent, conductive mixed metal oxide layer in integral contact with the n-type layer of the heterojunction or Schottky barrier device having a metal alloy grid network of the same metal elements of the oxide constituents of the mixed metal oxide layer embedded in the mixed metal oxide layer, an insulating layer which prevents electrical contact between the conductive metal base layer and the transparent, conductive metal oxide layer, and a metal contact means covering the insulating layer and in intimate contact with the metal grid network embedded in the transparent, conductive oxide layer for conducting electrons generated by the photovoltaic process from the device.Type: GrantFiled: December 23, 1977Date of Patent: January 23, 1979Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space AdministrationInventor: John C. Evans, Jr.
-
Patent number: 4122214Abstract: A transparent, conductive collector layer containing conductive metal channels is formed as a layer on a photovoltaic substrate by coating a photovoltaic substract with a conductive mixed metal layer; attaching a heat sink having portions protruding from one of its surfaces which define a continuous pattern in combination with recessed regions among said protruding portions to said substrate such that said protruding portions of said heat sink are in contact with the conductive layer of said substrate; andHeating said substrate while simultaneously oxidizing the portions of the conductive layer exposed to a gaseous oxidizing substance forced into said recessed regions of said heat sink, thereby creating a transparent metal oxide layer on said substrate containing a continuous pattern of highly conductive metal channels in said layer.Type: GrantFiled: October 21, 1977Date of Patent: October 24, 1978Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space AdministrationInventor: John C. Evans, Jr.
-
Patent number: 4104084Abstract: A heterojunction or Schottky barrier photovoltaic device comprising a conductive base metal layer compatible with and coating predominately the exposed surface of the p-type substrate of the device such that a back surface field region is formed at the interface between the device and the base metal layer, a transparent, conductive mixed metal oxide layer in integral contact with the n-type layer of the heterojunction or Schottky barrier device having a metal alloy grid network of the same metal elements of the oxide constituents of the mixed metal oxide layer embedded in the mixed metal oxide layer, an insulating layer which prevents electrical contact between the conductive metal base layer and the transparent, conductive metal oxide layer, and a metal contact means convering the insulating layer and in intimate contact with the metal grid network embedded in the transparent, conductive oxide layer for conducting electrons generated by the photovoltaic process from the device.Type: GrantFiled: June 6, 1977Date of Patent: August 1, 1978Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space AdministrationInventor: John C. Evans, Jr.
-
Patent number: 4104091Abstract: Diffusants are applied onto semiconductor solar cell substrates using screen printing techniques. The method is applicable to square and rectangular cells and can be used to apply dopants of opposite types to the front and back of the substrate. Then, simultaneous diffusion of both dopants can be performed with a single furnace pass.Type: GrantFiled: May 20, 1977Date of Patent: August 1, 1978Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space AdministrationInventors: John C. Evans, Jr., Henry W. Brandhorst, Jr., George A. Mazaris, Larry R. Scudder
-
Patent number: 4084985Abstract: A solar cell panel is fabricated by photoetching a pattern of collector grid systems with appropriate interconnections and bus bar tabs into a glass or plastic sheet. These regions are then filled with a first, thin conductive metal film followed by a layer of a mixed metal oxide, such as InAsO.sub.x or InSnO.sub.x. The multiplicity of solar cells are bonded between the protective sheet at the sites of the collector grid systems and a back electrode substrate by conductive metal filled epoxy to complete the fabrication of an integrated solar panel.Type: GrantFiled: April 25, 1977Date of Patent: April 18, 1978Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space AdministrationInventor: John C. Evans, Jr.
-
Patent number: 4082569Abstract: A transparent, conductive collector layer containing conductive metal channels is formed as a layer on a photovoltaic substrate by coating a photovoltaic substrate with a conductive mixed metal layer; attaching a heat sink having portions protruding from one of its surfaces which define a continuous pattern in combination with recessed regions among said protruding portions to said substrate such that said protruding portions of said heat sink are in contact with the conductive layer of said substrate; andHeating said substrate while simultaneously oxidizing the portions of the conductive layer exposed to a gaseous oxidizing substance forced into said recessed regions of said heat sink, thereby creating a transparent metal oxide layer on said substrate containing a continuous pattern of highly conductive metal channels in said layer.Type: GrantFiled: February 22, 1977Date of Patent: April 4, 1978Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space AdministrationInventor: John C. Evans, Jr.
-
Patent number: D295709Type: GrantFiled: October 7, 1985Date of Patent: May 17, 1988Assignee: Kover-Up, Inc.Inventors: John C. Evans, John E. Blair