Abstract: An apparatus and method of reflow soldering electronic components, preferably to printed circuit boards, in an inert atmosphere to reduce solder defects and the need for flux or cleaning wherein the inert atmosphere is provided from a source of inert gas through several distribution lines which parallel the conveyor belt of a reflow solder furnace and supply each end of porous sintered metal diffuser tubes situated above the conveyor belt, as well as gas knives situated in baffle compartments at the inlet and outlet of the reflow solder furnace to strip barrier layers of oxygen atmosphere from the electronic components and preclude ingress of oxygen atmosphere into the reflow solder furnace.

Abstract: This invention is a residue-free vapor-phase process for etching metallic layers during the manufacturing of integrated circuits. The process comprises contacting a portion of the metallic surface to be etched with an effective amount of an etching agent comprising a .beta.-diketone or .beta.-ketoimine dispersed in an atmosphere capable of oxidizing the metal to be removed at a temperature sufficient to form a volatile metal-ligand complex. The volatile metal-ligand complex is sublimed from the surface thereby etching successive layers of the metal.

Abstract: This invention is a vapor-phase process for cleaning metal-containing contaminants from the surfaces of integrated circuits and semiconductors between the numerous fabricating steps required to manufacture the finished electronic devices. The process employs cleaning agents comprising an effective amount of a partially halogenated or fully halogenated linear or branched carboxylic acid having from 2 to about 10 carbon atoms wherein the halogen is selected from fluorine or chlorine. The process comprises contacting the surface to be cleaned with an effective amount of the desired cleaning agent at a temperature sufficient to form volatile metal-ligand complexes on the surface of the substrate to be cleaned. The volatile metal-ligand complexes are sublimed from the surfaces of the substrate providing a clean, substantially residue-free surface.

Abstract: This invention is a vapor-phase process for cleaning metal-containing contaminants from the surfaces of integrated circuits and semiconductors between the numerous fabricating steps required to manufacture the finished electronic devices. The process comprises contacting the surface to be cleaned with an effective amount of a cleaning agent comprising a carboxylic acid selected from acetic acid or formic acid at a temperature sufficient to form volatile metal-ligand complexes on the surface of the substrate to be cleaned. The volatile metal-ligand complexes are sublimed from the surface of the substrate providing a clean, substantially residue-free surface.

Abstract: This invention is a residue-free cleaning process for removing metal-containing contaminants from a surface of a substrate of the type used in manufacturing semi-conductor devices. The process comprises contacting the substrate with an effective amount of a cleaning agent comprising a .beta.-diketone or .beta.-ketoimine dispersed in an atmosphere capable of oxidizing the metal-contaminants at a temperature sufficient to form volatile metal-ligand complexes on the surface of the substrate. The volatile metal-ligand complexes are sublimed from the surface of the substrate leaving essentially no residue.

Abstract: A residue-free fluxing process wherein the active fluxing agent comprises a .beta.-diketone or .beta.-ketoimine ligand. Such ligands react with surface metal oxides on workpieces to be soldered to form volatile metal-ligand complexes as reaction products which are sublimed from the surface leaving essentially no residue on the workpieces. The fluxing agents can be utilized in gas-phase processes wherein the workpieces are contacted with an effective amount of one or more ligands which are dispersed in a carrier gas or solvent or by incorporating the ligands into an alloy-vehicle mixture for use as conventional creams or pastes. The invention eliminates the need for post-reflow cleaning using solvents since no flux residue remains on the workpieces to be soldered following volitilization of the metal-ligand complex.

Abstract: A process for the vapor-phase synthesis of non-adduct volatile fluorinated and non-fluorinated metal-ligand complexes comprising contacting a .beta.-diketone or .beta.-ketoimine ligand with an inert carrier gas to vaporize the ligand, reacting the vaporized ligand with a metal species at a temperature sufficient to form the metal-ligand complex and recovering the metal-ligand complex by sublimation. The process is conducted in the absence of solvent thereby providing pure non-adduct metal-ligand complexes. Such complexes are particularly suited for specialty applications requiring use of high purity compounds.

Abstract: A residue-free fluxing process wherein the active fluxing agent comprises a .beta.-diketone or .beta.-ketoimine ligand. Such ligands react with surface metal oxides on workpieces to be soldered to form volatile metal-ligand complexes as reaction products which are sublimed from the surface leaving essentially no residue on the workpieces. The fluxing agents can be utilized in gas-phase processes wherein the workpieces are contacted with an effective amount of one or more ligands which are dispersed in a carrier gas or solvent or by incorporating the ligands into an alloy-vehicle mixture for use as conventional creams or pastes. The invention eliminates the need for post-reflow cleaning using solvents since no flux residue remains on the workpieces to be soldered following volatilization of the metal-ligand complex.