Abstract: Various designs are provided to mitigate or solve limitation on the bendability of an active matrix backplanes: including breaking large rigid silicon chips (ICs) into smaller rigid ICs, changing the orientation of rigid ICs, changing the placement of the ICs on the array, thinning the ICs to the point where the Si is flexible, and replacing the ICs with high quality TFT processing which can be done on flexible substrates.

Abstract: Bending a flexible x-ray detector to image a curved structure or object will distort the object appearance when compared to an image captured by a flat/rigid detector. An image distortion of this type can be corrected when the shape (relative bend position) of the x-ray detector is known. Incorporating strain sensors on the flexible x-ray detector makes it possible to record the local bend of the flexible x-ray detector when an image is taken. This shape information can be used to either label or correct for the image distortions created by bending the x-ray detector to assist users more accustomed to viewing images produced by flat/rigid x-ray detectors.

Abstract: Bending a flexible x-ray detector to image a curved structure or object will distort the object appearance when compared to an image captured by a flat/rigid detector. An image distortion of this type can be corrected when the shape (relative bend position) of the x-ray detector is known. Incorporating strain sensors on the flexible x-ray detector makes it possible to record the local bend of the flexible x-ray detector when an image is taken. This shape information can be used to either label or correct for the image distortions created by bending the x-ray detector to assist users more accustomed to viewing images produced by flat/rigid x-ray detectors.

Abstract: Transitioning conventional x-ray detector materials and structures to bendable or flexible (e.g., plastic) substrates makes them rugged against breakage when dropped but exposes the detectors to damage if bent. Disclosed are bendable digital x-ray detector structures that are rugged with regard to bending as well as dropping. The structures provide strain matching between layers so that a detector backplane is in and/or near the mechanical neutral plane and therefore less susceptible to bending stress.

Abstract: Various designs are provided to mitigate or solve limitation on the bendability of an active matrix backplanes: including breaking large rigid silicon chips (ICs) into smaller rigid ICs, changing the orientation of rigid ICs, changing the placement of the ICs on the array, thinning the ICs to the point where the Si is flexible, and replacing the ICs with high quality TFT processing which can be done on flexible substrates.

Abstract: Transitioning conventional x-ray detector materials and structures to bendable or flexible (e.g., plastic) substrates makes them rugged against breakage when dropped but exposes the detectors to damage if bent. Disclosed are bendable digital x-ray detector structures that are rugged with regard to bending as well as dropping. The structures provide strain matching between layers so that a detector backplane is in and/or near the mechanical neutral plane and therefore less susceptible to bending stress.

Abstract: A flexible TFT backplane includes, a flexible substrate, a first set of address line contacts associated with the substrate, and a second set of address line contacts associated with the substrate. The first set of address line contacts and the second set of address line contacts are located at opposite sides of the substrate from each other, defining a vertical direction. A first set of address lines designed to run in one of the vertical direction and a diagonal or non-vertical direction with respect to the defined vertical direction, with the first set of address lines connected to the first set of address line contacts. Also provided is a second set of address lines designed to run in one of a diagonal or non-vertical direction with respect to the defined vertical direction, and a combination of diagonal and horizontal directions with respect to the vertical direction, with the second set of address lines connected to the second set of address line contacts.

Abstract: Standard solder-based interconnect structures are utilized as mechanical fasteners to attach an IC die in a “flip-chip” orientation to a support structure (e.g., a package base substrate or printed circuit board). Electrical connections between the support structure and the IC die are achieved by curved micro-springs that are disposed in peripheral regions of the IC die and extend through a gap region separating the upper structure surface and the processed surface of the IC die. The micro-springs are fixedly attached to one of the support structure and the IC die, and have a free (tip) end that contacts an associated contact pad disposed on the other structure/IC die. Conventional solder-based connection structures (e.g., solder-bumps/balls) are disposed on “dummy” (non-functional) pads disposed in a central region of the IC die. After placing the IC die on the support structure, a standard solder reflow process is performed to complete the mechanical connection.

Abstract: A toothbrush assembly can include a plurality of bristles and a toothbrush body. The toothbrush body can include an indicator to provide information to a user using the toothbrush during a teeth cleaning session. The indicator can operate independent of any power supply external to the toothbrush assembly. A sensing mechanism can provide an electric signal to the indicator responsive to the user using the toothbrush assembly during the teeth cleaning session. An energy scavenging mechanism can provide operating power to the indicator responsive to the user using the toothbrush assembly during the teeth cleaning session.

Abstract: A method of forming a contact structure and a contact structure. The contact structure includes a contact location, and contact elements disposed substantially on the contact location, at least one such contact element including a deformable center and a conducting layer covering at least a part of the deformable center.

Abstract: An image sensor is disclosed including passivation walls extending above the pixel contact pads into a photosensor layer (e.g., amorphous silicon) such that the pixel contact pads are isolated to reduce cross-talk. The passivation walls are formed from SiO2 or SiON to further reduce cross-talk. An embodiment includes metal structures provided under interface regions (e.g., under the passivation walls) separating adjacent pixels that are negatively biased to prevent cross-talk, and optionally extend under the contact pad to increase pixel capacitance. One embodiment omits p-type dopant from the lower amorphous silicon photodiode layer, and additional photodiode material layers are disclosed. Another disclosed sensor structure utilizes a textured surface to increase light absorption. A color filter structure for image sensors is also disclosed.

Abstract: An image sensor is disclosed including passivation walls extending above the pixel contact pads into a photosensor layer (e.g., amorphous silicon) such that the pixel contact pads are isolated to reduce cross-talk. The passivation walls are formed from SiO2 or SiON to further reduce cross-talk. An embodiment includes metal structures provided under interface regions (e.g., under the passivation walls) separating adjacent pixels that are negatively biased to prevent cross-talk, and optionally extend under the contact pad to increase pixel capacitance. One embodiment omits p-type dopant from the lower amorphous silicon photodiode layer, and additional photodiode material layers are disclosed. Another disclosed sensor structure utilizes a textured surface to increase light absorption. A color filter structure for image sensors is also disclosed.

Abstract: An amorphous silicon electrographic writing head assembly which reduces the voltage drift in the high voltage driving transistor. The writing head including a substrate having a first surface and a second surface, the first surface having thin film elements fabricated thereon, the first surface having a first region, a second region, and a third region, the first region including an array of writing electrodes, the second region including an array of high voltage transistors, and the third region including interconnecting circuitry for connecting the thin film elements to a connector. The head also includes a first cover glass fixed to the first surface of the array covering the first region and a second cover glass fixed to the first surface of the array covering the third region.

Abstract: Disclosed are ionographic imaging apparatuses and processes. One apparatus comprises an imaging means, means for applying to the imaging means a liquid material capable of forming a dielectric peel layer adhering to the imaging means, ionographic writing means for generating a latent image on the peel layer, means for developing the latent image on the peel layer, and means for simultaneously transferring the peel layer bearing the developed image from the imaging means to a substrate and affixing the peel layer bearing the developed image to the substrate.

Abstract: A method of doping selected areas of semiconductor material in the fabrication of integrated circuit devices, including placing a semiconductor substrate in a glow discharge reactor, introducing reactant gases into the reactor, subjecting the reactant gases to a plasma discharge, depositing, upon the substrate, a dopant carrier layer comprising an amorphous semiconductor material having a predetermined dopant concentration, controlling the thickness of the dopant carrier layer, and driving the dopant atoms out of the amorphous semiconductor dopant carrier layer into the selected areas of the semiconductor substrate by means of a controlled elevated temperature anneal.

Abstract: An electrophotographic photoresponsive device for use in electrophotography comprised of a supporting substrate, and an amorphous silicon composition containing from about 25 parts per million by weight to about 1 weight percent of boron compensated with from about 25 parts per million by weight to about 1 weight percent of phosphorous, nitrogen, or arsenic. Also disclosed is a photoresponsive electrophotographic device comprised of a supporting substrate, an uncompensated amorphous silicon layer and an amorphous silicon composition containing from about 100 parts per million by weight to about 1 weight percent of boron compensated with from about 25 parts per million by weight to about 1 weight percent of phosphorous, wherein the compensation increases from zero percent compensation to one percent compensation, for a distance of from about 0.

Abstract: In an r.f. glow discharge system, a plurality of hollow electrodes are positioned circumferentially about a central point forming a circular array or squirrel cage. A workpiece is supported within the squirrel cage and relative rotational movement between the squirrel cage and the workpiece is provided. A plurality of apertures are provided along the surface of each electrode and aligned toward the surface of the workpiece. Alternatively, each electrode may further consist of a pair of inner and outer hollow tubes each with a plurality of apertures along its length with the apertures of the inner tube being adjacent to and spaced from the apertures of the outer tube but offset therefrom. The arrangement is best suited for a cylindrically shaped workpiece, e.g., a photoreceptor drum.