Abstract: A method of fabricating an integrated circuit on a body of semiconductor material of a first conductivity type and a first dopant concentration by depositing a layer of semiconductor material of first conductivity type and a second dopant concentration on the body; etching the layer to form distinct silicon islands; depositing dopant species in predetermined ones of the silicon islands so that the major surface and exposed edges of ones of the islands becomes second conductivity type; and thermally oxidizing the exposed surface portions of the body so that oxide fills the regions between the silicon islands.

Abstract: A process for the simultaneous fabrication of CMOS transistors and bipolar devices on the same integrated circuit. The process follows the standard Silicon-Gate Deep Depletion technology up through gate definition. An additional mask step is included for definition of the base implant region. After the base diffusion the process again follows the standard approach resulting in a new structure which permits the fabrication of CMOS/SOS as well as a bipolar driver transistor.